时域平面近场散射测量研究

时域平面近场散射测量是一种在近场区域进行散射测量的技术,可以有效地进行宽带的散射测量,具有超宽带测试、可以获得时域散射场、空间利用率高等特点,针对时域平面近场散射测量技术体系,在时域近场测量的理论基础上,提出了系统组建方案,论证了系统的可行性,开展了针对典型目标的验证测试,并对测量结果进行了初步的误差分析.证明了时域平面近场散射测量的有效性.     

ε‐Branched Flexible Side Chain Substituted Diketopyrrolopyrrole‐Containing Polymers Designed for High Hole and Electron Mobilities

Based on the integrated consideration and engineering of both conjugated backbones and flexible side chains, solution‐processable polymeric semiconductors consisting of a diketopyrrolopyrrole (DPP) backbone and a finely modulated branching side chain (ε‐branched chain) are reported. The subtle change in the branching point from the backbone alters the π?π stacking and the lamellar distances between polymer backbones, which has a significant influence on the charge‐transport properties and in turn the performances of field‐effect transistors (FETs). In addition to their excellent electron mobilities (up to 2.25 cm² V^?1 s^?1), ultra‐high hole mobilities (up to 12.25 cm² V^?1 s^?1) with an on/off ratio (I_on/I_off) of at least 10⁶ are achieved in the FETs fabricated using the polymers. The developed polymers exhibit extraordinarily high electrical performance with both hole and electron mobilities superior to that of unipolar amorphous silicon.     

Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

The formation of an energy‐barrier at a metal/molecular semiconductor junction is a universal phenomenon which limits the performance of many molecular semiconductor‐based electronic devices, from field‐effect transistors to light‐emitting diodes. In general, a specific metal/molecular semiconductor combination of materials leads to a fixed energy‐barrier. However, in this work, a graphene/C₆₀ vertical field‐effect transistor is presented in which control of the interfacial energy‐barrier is demonstrated, such that the junction switches from a highly rectifying diode at negative gate voltages to a highly conductive nonrectifying behavior at positive gate voltages and at room temperature. From the experimental data, an energy‐barrier modulation of up to 660 meV, a transconductance of up to five orders of magnitude, and a gate‐modulated photocurrent are extracted. The ability to tune the graphene/molecular semiconductor energy‐barrier provides a promising route toward novel, high performance molecular devices.     

Ambient‐Stable,Annealing‐Free,and Ambipolar Organic Field‐Effect Transistors Based on Solution‐Processable Poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene) without Long Alkyl Side Chains

An ambipolar conjugated polymer CF₃‐PBTV, poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene), consisting of thienylenevinylene as the donor and trifluoromethyl‐substituted biphenyl as the acceptor has been successfully synthesized. CF₃‐PBTV shows solution‐processability without electrically insulating long alkyl side chains. Grazing incidence X‐ray diffraction results suggest a nearly equal population of flat‐on and end‐on domains in CF₃‐PBTV thin film. The excellent ambipolarity of CF₃‐PBTV is demonstrated by well‐equivalent charge mobilities of 0.065 and 0.078 cm² V^?1 s^?1 for p‐ and n‐channel, respectively. The organic field‐effect transistors (OFET) also shows very high on/off ratio (≈10⁷) which is attributed to the relatively large bandgap and low‐lying highest occupied molecular orbital (HOMO) of CF₃‐PBTV. The OFET performance barely changes after the device is stored in ambient conditions for 90 days. The ambient‐stability is attributed to the enhanced oxidative stability from its low‐lying HOMO and the better moisture resistance from its fluorine contents. The performance of CF₃‐PBTV based OFET is annealing independent. It is noteworthy that the solution‐processable, ambipolar, and thienylenevinylene‐containing conjugated polymer without any long alkyl side chains is reported for the first time. And to the best of our knowledge, it is the first ambient‐stable, annealing‐free OFET with well‐equivalent ambipolarity.     

Polyazines and Polyazomethines with Didodecylthiophene Units for Selective Dispersion of Semiconducting Single‐Walled Carbon Nanotubes

Polymer wrapped single‐walled carbon nanotubes (SWNTs) have been demonstrated to be a very efficient technique to obtain high purity semiconducting SWNT solutions. However, the extraction yield of this technique is low compared to other techniques. Poly‐alkyl‐thiophenes have been reported to show higher extraction yield compare to polyfluorene derivatives. Here, the affinity for semiconducting SWNTs of two polymers with a backbone containing didodecylthiophene units interspersed with N atoms is reported. It is demonstrated that one of the polymers, namely, poly(2,5‐dimethylidynenitrilo‐3,4‐didodecylthienylene) (PAMDD), has very high semiconducting SWNT extraction yield compared to the poly(3,4‐didodecylthienylene)azine (PAZDD). The dissimilar wrapping efficiency of these two polymers for semiconducting SWNTs is attributed to the interplay between the affinity for the nitrogen atoms of the highly polarizable walls of SWNTs and the mechanical flexibility of the polymer backbones. Photoluminescence (PL) measurements demonstrate the presence of metallic tubes and SWNT bundles in the sample selected with PAZDD and higher purity of SWNT‐PAMDD samples. The high purity of the semiconducting SWNTs selected by PAMDD is further demonstrated by the high performance of the solution‐processed field‐effect transistors (FETs) fabricated using a blade coating technique, which exhibit hole mobilities up to 33.3 cm² V^?1 s^?1 with on/off ratios of 10⁶.     

Direct Transfer Printing with Metal Oxide Layers for Fabricating Flexible Nanowire Devices

A direct printing method for fabricating devices by using metal oxide transfer layers instead of conventional transfer media such as polydimethylsiloxane is presented. Metal oxides are not damaged by organic solvents; therefore, electrodes with gaps less than 2 μm can be defined on a metal oxide transfer layer through photolithography. In order to determine a suitable metal oxide for use as transfer layer, the surface energies of various metal oxides are measured, and Au layers deposited on these oxides are transferred onto polyvinylphenol (PVP). To verify the feasibility of our approach, Au source–drain electrodes on transfer layers and Si nanowires (NWs) addressed by the dielectrophoretic (DEP) alignment process are transferred onto rigid and flexible PVP‐coated substrates. Based on transfer test and DEP process, Al₂O₃ is determined to be the best transfer layer. Finally, Si NWs field effect transistors (FETs) are fabricated on a rigid Si substrate and a flexible polyimide film. As the channel length decreases from 3.442 to 1.767 μm, the mobility of FET on the Si substrate increases from 127.61 ± 37.64 to 181.60 ± 23.73 cm² V^?1 s^?1. Furthermore, the flexible Si NWs FETs fabricated through this process show enhanced electrical properties with an increasing number of bending cycles.     

基于动态粒子流场的视频异常行为自动识别

为了有效实现视频异常 行为的自动识别,基于动态粒子流场,将视频运动对象的运 动行为,映射为有效 反映其运动变化状态的动态粒子流,同时提取度量不同场景内容下的运动方式各异的异常行 为的显著性运动特 征,进行异常行为的分类与识别。对来自不同场景并具有不同运动行为方式的公开视频 测试序列的实验表明,本文方法无需跟踪运动对象,也无需预先采集 异常行为样本进行学习与训 练,可在多种条件下实现视频运动对象异常行为的有效自动识别。     

高马赫飞行器迎风面与攻角对光学窗口周围流场的影响分析

为了提高高马赫飞行下光学窗口的光学性能,对比分析了基于气动光学效应三种飞行器模型不同攻角的马赫数场、密度场、温度场和压力场的流场结构及对光学性能的影响.首先, 根据飞行器与来流的迎风面,建立了三种飞行器典型模型;继而, 给出了0、5和10攻角飞行工况;然后,建立了基于Navier-Stokes方程和湍流模型的三种攻角流场分布;最后, 对比分析了宽平头体飞行器中三种攻角温度场作用下的光学系统传递函数.结果表明,马赫数场与密度场、温度场与压力场分别具有相似分布形式;相同飞行速度和攻角下,大迎风面的飞行器光学窗口周围温度与压力较小迎风面大;相同飞行器,较大攻角对应较大流场强度,攻角为0、5和10时传递函数分别为0.188,0.097和0.028.此分析结果可为高马赫飞行下光学窗口优化提供一定的理论依据.     

矩形波导中模式分类的讨论

矩形波导是工程上最常用的导波结构,也是电磁场与微波教学中最重要的内容之一。本文讨论矩形波导中的模式分类,使用纵向分量法求解电磁场的各分量,利用边界条件确定未知参数,根据本征函数正交性证明矩形波导中不存在纵向电场、纵向磁场同时存在的混合模式。本文讨论的模式分类内容可以做为电磁场以及微波等相关课程教学中的有益参考.     

一种人体体表三维温度场的融合重建方法

重建人体体表三维温度场能够为包括诊断在内的多项人体医学分析提供可靠数据.由于红外成像具有温度测量精度低、成像分辨率不足以及显示效果较差等缺陷,导致重建的目标三维温度场的可靠性存在不足.针对这些问题,提出一种针对人体体表的三维温度场的融合重建方法.即首先采用黑体测温标定的方法,对红外热像仪的测温结果进行误差修正;其次对红...