Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

基于DELPHI的镍氢电池管理系统软件设计

通过对镍氢电池性能的研究，给出了一个应用ISA总线技术构建的、基于DELPHI编程平台的镍氢电池管理系统的设计方案，重点介绍了该系统的软件技术和实现方法。     

Gasification of polyethylene using steam plasma generated by microwave discharge

Gasification of polyethylene (PE) pellet was studied using atmospheric argon-steam plasma generated by microwave discharge and the feasibility of the process was examined. The experimental results showed that additional steam to argon plasma promoted the weight decrease of PE and enhanced the production of H₂, CO, CO₂ and CH₄. The results confirmed that the treatment of plastics with the steam plasma was effective to obtain synthesis gas.     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

Effects of Ca and Zr substitution upon structure and properties of Ba5LaTi3Ta7O30 low-loss dielectric ceramics

Effects of Ca and Zr substitution upon the dielectric properties of Ba₅LaTi₃Ta₇O₃₀ ceramics were investigated together with the structural characterization. All the samples of Ba₅La(Zr_xTi_1−x)₃Ta₇O₃₀ formed a filled tungsten-bronze structures, whereas the solid solution limit was determined as x=0.25 in (Ca_xBa_1−x)₅LaTi₃Ta₇O₃₀. Beyond this limit secondary phase of CaTa₂O₆ was detected and it would become the major phase for the Ca-rich compositions. The temperature coefficient of dielectric constant was improved with increasing Zr content while the dielectric constant decreased and the low dielectric loss varied little (in the order of 10⁻⁴). In the case of (Ca_xBa_1−x)₅LaTi₃Ta₇O₃₀, small temperature coefficient of dielectric constant could be obtained with increasing Ca content while the dielectric constant decreased significantly, and a small amount substitution of Ca for Ba induced decrease in dielectric loss.     

Effect of hot pressing on processing and properties of BBN ceramics

BBN (BaBi₂Nb₂O₉) is very interesting and promising lead free material with relaxor properties in capacitors, sensors and actuators.     

下T6-361井多井防碰绕障技术

下T6—361井是一口双靶定向井，由于受地面和地质条件的限制，必须穿越9口井，其中最近的4口井防碰距仅为13—32m，钻井施工难度大，是一口较典型的多井防碰绕障定向井。在优化井身剖面设计、优选钻具组合、采用导向钻井技术的基础上，采取了一系列安全钻进措施，顺利钻至设计井深。对该井的地质工程设计、井眼轨迹控制及防碰绕障技术等进行了介绍，对同类型井的施工有一定的借鉴。     

水力压裂净压力拟合分析解释技术研究与应用

基于三维裂缝延伸模拟模型的水力压裂净压力拟合分析解释技术,提出了净压力拟合分析解释的一般步骤及理论方法,研究了现场监测净压力的计算方法,并介绍了其在现场施工中的应用情况。该技术可以帮助认识地层参数和压裂参数,提高压裂施工成功率和有效率。     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.