唐山建龙900mm冷轧机组的工艺与设备

较系统地介绍了我国第1条国产化的中宽带钢冷连轧生产线，即唐山建龙钢铁控股有限公司900mm冷连轧生产线的工艺流程、主要设备组成及技术特点。重点介绍了900mm 4机架六辊轧机的技术参数、性能特点及自动控制系统。该生产线投产以来，取得了较好效果。     

中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀

多数ITO透明导电玻璃生产线在实现SiO2膜与ITO膜在线联镀时，应用SiO2靶射频溅射沉积SiO2膜工艺和ITO靶直流溅射沉积ITO膜工艺，如果SiO2膜应用硅靶反应磁控溅射工艺，存在这种工艺是否可以与ITO靶直流溅射沉积ITO膜工艺在线联用以及如何实现联用的问题。作者对现有的生产线进行了改造设计、加工，做了大量实验、质谱分析和多项测试研究，成功地实现反应溅射SiO2膜与ITO膜在线联镀，做到SiO2镀膜室的工作状态的变化基本上不影响ITO镀膜室的工艺条件。     

实用宽带新技术

简要介绍了三种宽带新技术及其应用，包括替代五类线的VDSL，可解决HFC上行噪音漏斗效应的SCDMA技术以及利用电源线传输高速数据的PLC技术。这些新技术由于具有较高的性能价值比和广阔的应用前景，受到了广泛的关注。     

电缆头在线测温系统的应用

统计分析了电缆头故障的概率和故障现象，提出了对电缆头在线测温的必要性，阐述了在线测温系统的特点，使用要点和效果。     

Signed line intercept count

Elements of surfaces that bound a phase (β) in a two phase mixture (α+β) may be classified as: (a) convex (++) if both principal curvatures are positive; (b) concave (? ?) if both are negative; and (c) saddle (+ ?) if one is positive and the other negative. This classification excludes the limiting cases for which one or both of the principal curvatures is zero. The traces of these surfaces that form the boundaries of the β areas on a representative two dimensional section may also be: (a) convex (+) if the local curvature is positive; or (b) concave (?) if it is negative. Line intercepts may be tabulated separately for intersections with convex (+) and concave (?) segments of boundary. This paper presents a derivation of fundamental stereological formulae that relate these counting measurements to three-dimensional geometric properties of the structure they sample.     

隔河岩水电厂220 kV线路保护配置及运行分析

介绍了隔河岩电厂220kV线路保护的原理设计及运行情况，以及采用了双重微机化继电保护装置后带来的优越性，简要描述了CSL-101A高频保护和RCS-931A光纤保护的应用特点。     

两相电流互感器配电网零序电流构造方法

中性点非直接接地配电网大多只安装A，C两相电流互感器（TA），而现有单相接地故障选线方法基本都以零序电流为基础实现。如何在两相TA配电网中准确检测并隔离接地故障线路，成为长期困扰实际运行的技术难题。通过对暂态电流的频域和时域分析，找出B相暂态电流与A，C相暂态电流的对应关系，提出在A相和C相接地时由A相和C相暂态电流构造B相暂态电流，进而得到较精确零序电流的方法。通过大量仿真实验验证了所提出的构造方法的正确性。零序电流的成功构造为实现两相TA配电网单相接地故障选线提供了基础。     

复杂条件下发挥锚杆支护作用的相关技术

介绍了在特殊地质和开采条件下,发挥锚杆支护作用的几种相关技术。     

高炉冷却壁失效原因研究

本文针对安钢高炉冷却壁破损的形式、原因进行研究分析,探讨了冷却壁的结构、材质、加工与安装工艺对其寿命的影响。介绍了安钢高炉炉役后期冷却壁的维护生产实践。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.