胜科1井钻井事故的预防与处理

胜科1井设计井深7 000 m,完钻井深7 026 m。在该井钻井过程中,针对上部大尺寸钻头破岩效率低、大井眼井壁稳定性差、大段盐膏层、膏岩层的塑性蠕变和塑性流动造成井眼复杂、超深井高温高压给钻井液性能的控制和水泥浆调控等带来的一系列技术难题,制定了一整套预防井下事故和复杂情况的技术措施,从而确保了该井的钻探成功。该井在钻井过程发生了2次断钻具事故和1次卡钻事故,根据超深井的特点,采取了较为稳妥的处理措施,同时,有针对性地研制了高效铣环和PDC钻头专用打捞器,3次事故处理均获得了成功,共耗时38.5 d。详细介绍了该井所采取的预防和处理钻井事故的技术措施,可为其他超深井的钻井施工提供一定的借鉴。     

Model for Nanoscopic Domain Formation in Dipalmitoyl-PC/Dilauroyl-PC/Cholesterol Mixture

We describe the lyotropic liquid crystalline phase transitions in the lipid mixture dipalmitoil-PC/dilauroy-PC/cholesterol by 3D spin-1 lattice model. The formation of nanoscale domains with the characteristic size about 300 nm was studied in experiments on confocal fluorescence microscopy (CFM) (G. V. Feigenson and J. T. Buboltz, Biophys. J. 80, 2775 (2001)). The structure parameters of the lamellar vesicle in dipalmitoil-PC-rich phase, corresponding to these regions, are verified by numerical Monte Carlo simulations on the lattice. We point its superconductivity analogy properties at the region of phase stability for composition-dependent nanoscopic region.     

泥土中微量六氯环戊二烯的气相色谱分析

采用SE 3 0为固定液进行色谱柱分离 ,用外标定量法测定泥土中的微量六氯环戊二烯 ,结果最小检知量为 0 .18× 10 - 6 ,相关系数为 0 .99992。     

高阻值Cd1-xZnxTe晶体的生长及其性能测试

通过适当的工艺措施，采用Bridgman法生长了直径为30mm的X射线及γ射线探测器级的Cd.9Zn0．1Te晶锭．测试结果表明：该晶锭结晶质量良好，位错密度低，成分均匀，杂质含量低，红外透过率和电阻率都十分接近本征Cd.9Zn0．1Te的值．并从晶体的生长特性、缺陷和杂质的角度，分析了生长高性能晶体的条件，研究了生长Cdl-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系．     

Decreasing miscibility with greater heterogeneity in ternary polymer blend: poly(cyclohexyl methacrylate), poly(α‐methyl styrene) and poly(4‐methyl styrene)

A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (T_g) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

A formal model of asynchronous communication and its use in mechanically verifying a biphase mark protocol

We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity.     

二(二甲苯基)丙烷合成工艺的研究

二氯丙烷(DCP)与二甲苯在混合金属氯化物催化剂(HD90)作用下合成二(二甲苯基)丙烷,生产过程简单,产品收率高。在60—80℃的温度下,二甲苯与二氯丙烷摩尔比为6∶1,HD用量50克/摩尔DCP的条件下反应5—6小时,二(二甲苯基)丙烷的收率可达88％以上。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.