高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器．研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0．82mW／mA和2．59mA，激光器在23mA时输出16mW最大光功率．氧化直径为5μm的激光器25℃时的最小阈值电流为570μA，其最大饱和光功率为5．5mW．     

用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究

提出了一种用于半导体激光器热沉的金刚石膜/ Ti/ Ni/ Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/ Ni/ Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果;XRD显示预处理过的金刚石膜,镀膜后经过6 73K,2 h低温真空热处理,Ti/金刚石膜界面形成Ti O和Ti C;RBS分析进一步证实该金属化体系在6 73K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的4 0 % .     

Barrier studies on porous silk semiconductor dielectric

Barrier integrity of Ta-films deposited using the enhanced coverage by re-sputtering (EnCoRe¹) barrier was investigated on untreated surfaces of blanket porous SiLK^{, 2} semiconductor dielectric (developmental version 7, hereinafter v7). Barrier integrity of a bi-layer EnCoRe Ta(N)/Ta film was studied on single damascene lines using v7 and porous SiLK semiconductor dielectric (developmental version 9, hereinafter v9). On blanket wafers more than 30 nm barrier thickness is necessary to achieve complete pore sealing. Analysis of the sheet resistance showed that when tantalum is deposited, a low resistivity -phase is nucleated on the low-k surface. When deposited onto single damascene structures, EnCoRe Ta(N)/Ta is successful in providing a continuous metallic barrier layer over v7 and v9 semiconductor dielectric lines.     

Modeling Chirp and Phase Inversion in Wavelength Converters based on Symmetrical MZI-SOAs for use in All-Optical Networks

All-optical wavelength conversion based on multi-section semiconductor optical amplifiers (SOAs) in a symmetrical Mach-Zehnder interferometer (SMZI) is modeled for use in optical networks. It incorporates an enhanced SOA model that is implemented using the time domain transfer matrix approach and hence the overall numerical model determines simultaneously the wavelength and gain parameters for the wavelength converter. The overall model accurately predicts the optimal conditions for the SMZI arrangement in order to achieve the best results for the chirp, the phase inversion and the converted probe signal power. It is also demonstrated that large chirp and mismatch of the phase inversion reduces the eye opening ratio (EOR) which can seriously affect the performance of the wavelength converter to be used as a sub-system component in all-optical networks.     

太赫兹光非对称解复用器中自发辐射噪声特性分析

提出了一个在超短脉冲注入半导体光放大器 (SOA)时 ,在考虑了半导体带间效应以及带内效应 ,包括载流子热效应、谱烧孔效应、双光子吸收效应以及超快非线性折射效应的自发辐射噪声的计算模型。并利用该模型计算了放大自发辐射 (ASE)噪声对太赫兹光非对称解复用器 (TOAD)开关性能的影响。数值结果表明 ,在考虑ASE噪声情况下 ,TOAD的开关窗口的边沿更陡 ,在开关窗口的尾部还会出现明显的小峰。结果还表明 ,在输入为理想孤子脉冲下 ,即使考虑ASE噪声 ,在TOAD处于开的状态时 ,其输出信号的信噪比也大于 2 5dB。     

星间激光通信中光放大技术应用研究

随着星间光通信技术的发展，光放大技术的应用成为了必然。本文研究了星间激光通信中不同波长光放大器的应用方案，提出并分析了对应的应用技术难点。     

Pt/6H-SiC肖特基势垒二极管特性分析

采用直流磁控溅射法、Pt作肖特基接触的工艺，制作了N型6H—SiC肖特基势垒二极管，对肖特基势垒二极管的电学特性及温度特性进行了研究。实验结果表明，该器件具有很好的整流特性，反向电流小、击穿电压高，且在高温下器件波动很小，能够稳定地工作，适合于在高温(600℃)等恶劣环境下长期可靠地工作。     

全光波长转换技术的改进和发展

全光波长转换技术(AOWC)对WDM光网络的发展有着重要的意义，在简单回顾传统AOWC的基础上，介绍了三种较新的波长转换技术，阐述了其工作原理，简要说明了其实检进展及优缺点；最后讨论了全光波长转换器的发展方向。     

脉冲式半导体激光器准直光学系统的设计

根据具体的探测环境和探测精度,通过理论分析,提出了脉冲式半导体激光器准直光束的单透镜设计方法和柱面透镜的设计方法,并且给出了具体的设计参数。可以获得高斯光束的准直发散角为1.48mrad;高斯光束的腰粗为0.325mm。     

星间激光通信技术进展与趋势

较详细地评述了目前国外卫星间光通信技术研究的现状．根据关键单元技术的进展情况，总结了未来星间光通信系统的发展趋势。