组态软件在应用中的功能扩展

在DDE动态数据交换基础上,采用本地以太网UDP用户数据报协议,解决了组态王不支持网络变量从本机输出的问题,完善了系统功能。     

Networks for sorting multitonic sequences

Lee and Batcher have designed networks that efficiently merge k separately provided sorted sequences of known lengths totalling n. We show that the design is still possible, and in fact easier to describe, if we do not make use of the lengths, or even the directions of monotonicity, of the individual sequences—the sequences can be provided in a single undelimited concatenation of length n. The depth of the simplest resulting network to sort sequences that are “k-tonic” and of length n is , generalizing Batcher's 1968 results for the extreme values of k (k=2 corresponding to merging, and k=n/2 corresponding to general sorting).The exposition is self-contained and can serve even as an introduction to sorting networks and Batcher's results.     

小型腔式微波离子源的研制

研制了１种用在离子束细胞刻蚀装置中的小型腔式微波离子源，它由石英放电管、同轴谐振腔和封装在管一端的二电极引出系统组成。该源由同轴腔激发起的表面波在石英管内产生等离子体柱。为了提高柱末端等离子体离子引出流密度，选用了在内径７．０ｍｍ直管的一端加上一内径５．０ｍｍ衬管的放电管。在微波频率为２．４５ＧＨｚ，输入功率为９３Ｗ下，氮的引出流密度分别为４８．４ｍＡ／ｃｍ２和９１．７ｍＡ／ｃｍ２。这种表面波放电等离子体源体积小、结构简单，可在较宽的压强范围内产生重复性好、工作稳定的等离子体柱。     

圆柱型岔管计算机辅助设计与绘图

本文给出了圆柱型岔 管的计算机辅助设计与绘图软件的研制过程，应用本软件可精确计算正交或斜交，等径或不等径的圆柱岔 管的相贯线坐标，展开曲线坐标，各种钢钢筋的位置和形状，     

离子交换法合成三氨基胍叠氮酸盐

三氨基胍叠氮酸（ＴＡＺ）分子中的含氮量高达８５．７％，燃烧分解时不仅－Ｎ３可释放３６７ｋＪ／ｍｏｌ的键能，而且放出大量的氮气，是一个提高比冲，降低燃烧温度的理想的推进剂两组分之一。     

程控交换机的可靠性对策

为达到程控电话交换机系统技术性能的稳定可靠，本文着重论述了该种设备应采取的各种可靠性对策。     

XPS对离子交换法光色玻璃中银的状态研究

本文介绍利用ｘ射线光电子能谱分析仪（ＸＰＳ），对玻璃表面银的存在状态进行研究，实验结果表明银以Ａｇ＾０、Ａｇ＾＋、Ａｇ＾＋＋三种状态存在，而Ａｇ＾＋的存在有利于玻璃光色性的提高。文中并提出了在工艺过程中应采用惰性或弱氧化性气氛。     

有色冶金中的离子交换膜电解技术

离子膜电解技术在有色冶金工业中有重要的应用价值 ,膜的选择透过性和不同的电极过程相结合可完成各种冶金过程。综述了离子交换膜电解技术在高纯金属的制备、无机物的电化合成、多价离子氧化状态的控制及金属离子的分离等冶金领域的研究现状 ,分析了该技术的特点 ,并指出了该技术要实现工业化必须解决的主要问题     

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

In this work, high concentration erbium doping in silicon-rich SiO₂ thin films is demonstrated. Si plus Er dual-implanted thermal SiO₂ thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to 10 at.% or the doping level of 10²¹ atoms cm⁻³, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO₂ matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO₂ films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO₂ matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.