ATM交换机的硬件体系结构探讨

本文首先对ＡＴＭ的背景作了一个简单的介绍，接着阐述了ＡＴＭ和ＡＴＭ交换机的主要原理和技术，然后从硬件系结构的角度具体地分析了一种实验ＡＴＭ交换机是怎样ＡＴＭ技术的详细方法。     

Electrochemical intercalation in NiOx thin films

In this work we investigated the mechanism of the electrochemical intercalation reactions in rf sputtered nickel oxide thin films electrodes by two techniques: mechanical stress change measurements by means of an optical technique and mass changes using an electrochemical quartz microbalance (EQCM). The experiments were performed in alkaline electrolytes containing cations of the first column of the periodic table. Reversible mass and volume changes were observed. In order to explain these experimental results, an exchange reaction is proposed, in which the oxidation process is accompanied by the deinteractional of a relative large number of “light” cations, simultaneously with the intercalation of a smaller number of heaviest cations.     

与国际综合业务数字网连接的京,沪,穗国际交换机工程

本文介绍了在新建的北京、上海、广州、国际交换机工程中采用新一代程控交换技术接通国际综合业务数字网，以及本工程采用的中继方式。     

特征X射线能谱法测定Fe^＋注入小麦种子的深度

用１１０ｋｅＶ Ｆｅ＾＋离子束垂直注入小麦种胚后，在扫描电子显微镜上沿种子纵沟剖面，在不同深度上测量Ｆｅ元素被激发出的特征Ｘ射线强度分布，结果表明分布呈指数衰减，与晶体中的热扩散分布相类似，并对此进行了讨论。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

U(Ⅳ)-U(Ⅵ)同位素交换反应动力学研究 Ⅰ.Fe~(2+)对U(Ⅳ)-U(Ⅵ)同位素交换反应的催化作用

一、前言由于U(IV)-U(VI)同位素交换体系具有相当大的同位素效应和很好的稳定性,并且容易实现两相回流,这对于分离U同位素的工业应用都是十分有利的。但是,U(IV)-U(VI)同位素交换反应速度非常慢,常温下H~+浓度为1.0—4.0 mol/l时,速度常数为1.0×10~(-4)l~2/mol·s。因此要用U(IV)-U(VI)交换体系浓缩铀同位素,必须研究U(IV)-U(VI)交换反应动力学,找到加快交换反应的方法。     

置换通风与个体化微环境控制

介绍了传统的全空间空调方式，指出全空间空调方式不能同时为所有人提供可接受的热感觉和室内空气品质，而置换通风和个体化控制的联合将是一种理想的空调方式，在更大程度上满足人们的不同需要。     

Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.