Synthetic resins: XV. Chelation ion exchange properties of 2,4- dinitrophenylhydrazone of resacetophenone-formaldehyde resin

A number of copolymers were synthesised by condensing the 2,4-dinitrophenylhydrazone of resacetophenone with substituted benzoic acids/ phenols and formaldehyde in the presence of sodium hydroxide or hydrochloric acid. The decomposition temperature, solubility and viscosity of the polymers have been determined. The ion-exchange properties have been studied by using a batch equilibrium method. The distribution of a number of metal ions between an aqueous solution and the resin have been measured. A wide range of pH and variable ionic strengths have been investigated.     

离子静电水处理技术在循环冷却水中的应用

简要介绍了离子静电水处理技术杀菌、灭藻、防垢阻垢的机理，及在循环冷却水系统中的应用情况。     

Retention of gallium ions from acidic solutions by pyridine strong‐base anion exchangers

Using the batch method, the retention of Ga(III) from HCl solutions by two gel‐type pyridine strong‐base anion exchangers containing 1‐methyl‐ or 1‐butyl‐4‐vinylpyridinium chloride structural units, called S₁ and S₂ resins, respectively, was studied. The influence of the HCl and Ga(III) concentrations as well as of the contact time between the resin and the liquid phase was investigated. The parameters, which characterize the retention process, were estimated using Langmuir and Freundlich isotherms. Both resins exhibited a higher affinity for gallium ions from a 6M HCl solution. According to Langmuir isotherms, maximum retention capacities of 44.44 and 60 mg Ga(III)/g dry resin for the S₁ and S₂ resins, respectively, were obtained. Freundlich isotherms provide additional proof for a higher affinity of the S₂ resin for Ga(III) from HCl solutions. It is clear that the substituent length increase on N⁺ atoms led to an increasing affinity of the pyridine strong base anion exchangers toward Ga(III). © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 3440–3444, 2002     

离子注入半导体的快速热退火与SOI技术

自1977年以来,为了摸索离子注入半导体的新退火方法,各国学者进行了大量的研究工作。这种努力是从激光退火的研究开始的。激光与半导体材料相互作用的研究,已派生出若干很有生命力的应用项目,其中,快速热退火、SOI(Semiconductor on Insulator)技术等已显示了重要的应用前景,并正在走向实用化。     

用于重离子核反应实验测量的纵向电场气体电离室

本文报道了一种新型的大动态范围，多叠层探测器系统组件之一的纵向电场气体电离室的构造，性能和在中能得离子核反应实验中的应用。     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

半导体集成电路在锂离子电池保护电路中的应用

本文首先扼要介绍锂离子电池保护电路的功能，然后分别介绍过充电保护，过放电保护，过电流保护，最后列举几种保护性半导体IC的性能及应用电路的结构。     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

硼酸使掺铁铝酸锂发光增强的现象

在硼酸存在下合成了掺铁铝酸锂荧光体,研究了在不同温度下硼酸加入量对荧光体发光强度的影响,并通过X射线粉末衍射和粒度分析,初步探讨了发光增加的原因。     

负离子功能针织物在直接蒸发冷却式空调中的应用

在分析负离子净化空气的原理及环境状况与空气中负离子浓度的关系基础上,应用负离子功能粘胶长丝和涤纶短纤混纺纱针织物作为空调滤材,利用空调出风(冷风)使针织物滤材试样飘动,相互拍击摩擦,使空调出风中的氧气分子和水分发生有效电离,从而产生大量空气负离子。实验结果表明,负离子功能粘胶长丝和涤纶短纤混纺纱针织物都有释放空气负离子的功能;而且在同规格纱线的平针组织、双罗纹组织、蜂巢组织和畦编组织针织物中,畦编组织针织物释放的负离子量最大;空气相对湿度对功能材料释放负离子数量有明显影响,当相对湿度在65%~70%时释放的负离子量趋于最大。