Effect of Ionization Characteristics on Electrochemical Migration Lifetimes of Sn-3.0Ag-0.5Cu Solder in NaCl and Na<Subscript>2</Subscript>SO<Subscript>4</Subscript> Solutions

Anodic dissolution characteristics and electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder in NaCl and Na₂SO₄ solutions were investigated using anodic polarization tests and water drop tests (WDT). The ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution (42.4 s) was longer than that in Na₂SO₄ solution (34.8 s). The pitting potential of Sn-3.0Ag-0.5Cu solder in NaCl solution (135 mV, SCE) was higher than that in Na₂SO₄ solution (−367 mV, SCE). The passivity film (SnO₂) formed on Sn-3.0Ag-0.5Cu solder during WDTs in NaCl solution was thicker than that formed in Na₂SO₄ solution. Therefore, the longer ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution than in Na₂SO₄ solution can be attributed to the higher pitting potential in the NaCl solution, which is ascribed to the formation of a thicker passivity film (SnO₂) in the former. It was confirmed that microelements such as Ag and Cu do not take part in ECM because they form chemically stable intermetallic compounds with Sn. We believe that Sn is the only element that contributes to ECM, and dissolution of Sn at the anode is possibly the rate-determining step of ECM of Sn-3.0Ag-0.5Cu solder.     

Er3+: Y0.5Gd0.5VO4激光晶体的生长和热学性质

用提拉法生长出Er3 : Y0.5Gd0.5VO4单晶,用电感耦合等离子体(ICP)光谱法测定晶体中Er3 原子数分数为0.83%,有效分凝系数为1.03.在30～1300℃测量了晶体a轴和c轴的热膨胀系数分别为2.08×10-6/℃,8.87×10-6/℃;测得晶体在25℃时的比热值为0.48J/(g·K).采用激光脉冲法测量了晶体的热扩散系数,并通过计算得出晶体的热导率,在25～200℃温度范围,晶体在<100方向上的热导率为6.1～4.9W/(m·K),在<001方向上的热导率为7.7～6.2W/(m·K).     

基于0.5μm CMOS工艺的高压器件

近年来,驱动类、音响类、接口类电路产品系列是CMOS集成电路发展的一个重要方向,这些电路中特有的高低压兼容结构是其重要的特点.相应地高低压兼容CMOS工艺技术应用也越来越广泛.本文研究了与常规CMOS工艺兼容的高压器件的结构与特性,在结构设计和工艺上做了大量的分析和实验,利用n-well和n管场注作漂移区,在没有增加任何工艺步骤的情况下,成功地将高压nMOS,pMOS器件嵌入在商用3.3/5V 0.5μm n-well CMOS工艺中.测试结果表明,高压大电流的nMOS管BVdssn达到23～25V,P管击穿BVdssp>19V.     

Thermal depolarization and electromechanical hardening in Zn2+-doped Na1/2Bi1/2TiO3-BaTiO3

Na_1/2Bi_1/2TiO₃-based materials have been earmarked for one of the first large-volume applications of lead-free piezoceramics in high-power ultrasonics. Zn²⁺-doping is demonstrated as a viable route to enhance the thermal depolarization temperature and electromechanically harden (1-y)Na_1/2Bi_1/2TiO₃-yBaTiO₃ (NBT100yBT) with a maximum achievable operating temperature of 150 °C and mechanical quality factor of 627 for 1 mole % Zn²⁺-doped NBT6BT. Although quenching from sintering temperatures has been recently touted to enhance T_F-R, with quenching the doped compositions featuring an additional increase in T_F-R by 17 °C, it exhibits negligible effect on the electromechanical properties. The effect is rationalized considering the missing influence on conductivity and therefore, negligible changes in the defect chemistry upon quenching. High-resolution diffraction indicates that Zn²⁺-doped samples favor the tetragonal phase with enhanced lattice distortion, further corroborated by ²³Na Nuclear Magnetic Resonance investigations.     

Thermal reliabilities of Sn-0.5Ag-0.7Cu-0.1Al2O3/Cu solder joint

The effects of trace addition of Al₂O₃ nanoparticles (NPs) on thermal reliabilities of Sn-0.5Ag-0.7Cu/Cu solder joints were investigated. Experimental results showed that trace addition of Al₂O₃ NPs could increase the isotheraml aging (IA) and thermal cyclic (TC) lifetimes of Sn-0.5Ag-0.7Cu/Cu joint from 662 to 787 h, and from 1597 to 1824 cycles, respectively. Also, trace addition of Al₂O₃ NPs could slow down the shear force reduction of solder joint during thermal services, which was attributed to the pinning effect of Al₂O₃ NPs on hindering the growth of grains and interfacial intermetallic compounds (IMCs). Theoretically, the growth coefficients of interfacial IMCs in IA process were calculated to be decreased from 1.61×10^-10 to 0.79×10^-10 cm²/h in IA process, and from 0.92×10^-10 to 0.53×10^-10 cm²/h in TC process. This indicated that trace addition of Al₂O₃ NPs can improve both IA and TC reliabilities of Sn-0.5Ag- 0.7Cu/Cu joint, and a little more obvious in IA reliability.     

Surface modification of LiNi0.5Co0.2Mn0.3O2 cathode materials with Li2O‐B2O3‐LiBr for lithium‐ion batteries

LiNi_0.5Co_0.2Mn_0.3O₂ (NCM523) cathode material suffers from phase transformation and electrochemical performance degradation as its main drawbacks, which are strongly dependent on the surface state of NCM523. Herein, an effective surface modification approach was demonstrated; namely, the fast lithium‐ion conductor (Li₂O‐B₂O₃‐LiBr) was coated on NCM523. The Li₂O‐B₂O₃‐LiBr coating layer as a protecting shell can prevent NCM523 particles from corrosion by the acidic electrolyte, leading to a superior discharge capacity, rate capability, and cycling stability. At room temperature, the Li₂O‐B₂O₃‐LiBr–coated NCM523 exhibited an excellent capacity retention of 87.7% after 100 cycles at the rate of 1 C, which is remarkably better than that (29.8%) without the uncoated layer. Furthermore, the coating layer also increased the discharge capacity of NCM523 cathode material from 68.7 to 117.0 mAh g^?1 at 5 C. Those can be attributed to the reduction in the electrode polarization and improvement in the electrode conductivity, which was supported by electrochemical impedance spectroscopy and cyclic voltammetry measurements.     

Bi_(0.5)Na_(0.5)TiO_3基无铅压电陶瓷的研究进展

Bi_(0.5)Na_(0.5)TiO_3基无铅压电陶瓷是目前应用前景最广阔的一类无铅压电陶瓷,本文综述了无铅压电陶瓷的发展概况,系统地概括了国内外从离子掺杂、添加第二组元形成固溶体和晶粒定向生长形成织构陶瓷3个方面对改善Bi_(0.5)Na_(0.5)TiO_3基无铅压电陶瓷性能的研究现状,对无铅压电陶瓷的发展进行了展望。     

Composition Engineering of All‐Inorganic Perovskite Film for Efficient and Operationally Stable Solar Cells

Cesium‐based inorganic perovskites have recently attracted great research focus due to their excellent optoelectronic properties and thermal stability. However, the operational instability of all‐inorganic perovskites is still a main hindrance for the commercialization. Herein, a facile approach is reported to simultaneously enhance both the efficiency and long‐term stability for all‐inorganic CsPbI_2.5Br_0.5 perovskite solar cells via inducing excess lead iodide (PbI₂) into the precursors. Comprehensive film and device characterizations are conducted to study the influences of excess PbI₂ on the crystal quality, passivation effect, charge dynamics, and photovoltaic performance. It is found that excess PbI₂ improves the crystallization process, producing high‐quality CsPbI_2.5Br_0.5 films with enlarged grain sizes, enhanced crystal orientation, and unchanged phase composition. The residual PbI₂ at the grain boundaries also provides a passivation effect, which improves the optoelectronic properties and charge collection property in optimized devices, leading to a power conversion efficiency up to 17.1% with a high open‐circuit voltage of 1.25 V. More importantly, a remarkable long‐term operational stability is also achieved for the optimized CsPbI_2.5Br_0.5 solar cells, with less than 24% degradation drop at the maximum power point under continuous illumination for 420 h.     

Na0.5Bi0.5TiO3−BaTiO3−SrTiO3陶瓷的相图及电致伸缩性能

目的 利用SrTiO3调控Na0.5Bi0.5TiO3−BaTiO3−SrTiO3(NBT−BT−ST)三元系陶瓷的相结构,在室温下获得性能优异的电致伸缩材料,该材料可用于包装机械物料供给微振动器的研发。方法 采用传统固相合成法制备(1−x)[0.94NBT−0.06BT]−xST陶瓷。在分析(1−x)[0.94NBT−0.06BT]−xST陶瓷相图的基础上,阐述不同相区应变的来源,并系统研究弛豫相区陶瓷铁电、应变和电致伸缩性能等。结果 随着ST含量的增加,(1−x)[0.94NBT−0.06BT]−xST陶瓷的相结构由三方相、四方相两相共存→四方铁电相→铁电相、弛豫相共存→弛豫相。三方、四方两相共存区陶瓷的应变主要来源于晶格变形和非180^o畴转向。铁电、弛豫两相共存区陶瓷的应变主要来源于电场引发弛豫相和铁电相的相变。弛豫相区陶瓷的应变主要来源于样品晶格本征变形产生的电致伸缩效应。在弛豫相区,随着ST含量的增大,(1−x)[0.94NBT−0.06BT]−xST陶瓷的弛豫性增强,电滞回线逐渐变瘦,应变和滞后性均出现不同程度的降低,其中,x=0.40的样品在电场强度60 kV/cm下的应变滞后性降至7.8%,表现出典型的电致伸缩特征。在较强的弛豫性和形成纳米极性微区的作用下,在组分x=0.40时陶瓷在电场强度50 kV/cm下的电致伸缩系数高达0.021 3 m⁴/C²。结论 通过ST调控NBT基陶瓷的相结构,在弛豫相区能够有效地改善其电致伸缩性能。利用该技术制备的陶瓷电致伸缩材料可为包装机械物料供给微驱动器的研发和改进提供技术支持。     

Bi0.5Sb1.5Te3/环氧树脂柔性复合热电厚膜的制备及其面内制冷性能

利用丝网印刷法在聚酰亚胺基板上制备了Bi_0.5Sb_1.5Te₃/环氧树脂柔性复合热电厚膜, 通过优化Bi_0.5Sb_1.5Te₃粉末含量提高了其电输运性能。复合厚膜在300 K时的最优功率因子达到1.12 mW·m ^-1·K ^-2, 较前期报道的数值提高了33%。抗弯测试表明复合厚膜的电阻在弯曲半径大于20 mm时基本不变, 在弯曲半径为20 mm, 弯曲次数小于3000次时, 仅有轻微增大, 说明其在柔性热电器件领域具有应用潜力。红外热成像技术显示, 在工作电流为0.01 A到0.05 A时, 复合厚膜热电臂两端可以形成4.2 ℃到7.8 ℃的温差, 表明了其在面内制冷领域应用的可能性。