Luminescent Poly(p‐phenylenevinylene) Hole‐Transport Layers with Adjustable Solubility

The active part of present polymer light‐emitting diodes (PLEDs) consists of only a single layer. Multilayer devices have the advantage that the electron and hole transport can be balanced and that the recombination can be removed from the metallic cathode, leading to higher efficiencies. A major problem for polymer‐based multilayer devices is the solubility of the materials used; a multilayer can not be fabricated when a spin‐cast layer dissolves in the solvent of the subsequent layer. We demonstrate the development of high‐mobility poly(p‐phenylenevinylene) (PPV)‐based hole‐transport layers with tunable solubility by chemical modification. Enhanced charge‐transport properties are achieved by using symmetrically substituted PPVs; copolymers of long and short side chains enable us to tune the solubility without loss of the enhanced charge transport. Dual‐layer PLEDs, in which the holes are efficiently transported via this copolymer towards the luminescent layer, exhibit an enhanced efficiency at high voltages (> 10 V) and a strongly improved robustness against electrical breakdown.     

Analytical model of a superluminescent diode

Using a set of traveling wave rate equations ,a superluminescent diode with a low facet reflectivity is studied .Analytical expressions of the distribu-tions of carrier density ,forward-and backward-propagation photon densities,and gain are obtained at different facet reflectivities.It is shown that the high nonuni-form carrier distribution is evident in the case of low facet reflectivity.The results can serve as useful guides in understanding emission mechanism of superlumi-nescent diodes.     

Efficiency analysis of a-SiC:H thin film light emitting diodes

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等离子清洗在LED封装工艺中的应用

在LED封装工艺过程中,器件表面的氧化物及颗粒污染物会降低产品可靠性,影响产品质量。如在封装前进行等离子清洗,则可有效去除上述污染物。介绍了等离子清洗设备原理,并对清洗前后的效果做了对比。     

Verification of a high precision CMOS sensor for angle-of-arrival (AOA) measurement of LED light in ultra-miniaturized applications

In this study a specially revised version of the concept for measuring the angle-of-arrival (AOA) of incidence light was used, which is particularly well suited for the construction of trigonometric sensor concepts with external dimensions of only a few millimeters. The aim of the study was to break down the interrelationships for the overall systemically achievable accuracies. The study therefore focused on the lowest possible power consumption of the LED light source used, minimum component dimensions and quantities, outline of the practicable minimum distances between LED light source and integrated sensor unit, robustness of the sensor against gradients and intensity changes in lighting, illumination intensity and sensor noise, as well as the requirements for the precision of the mechanical components used. It could be shown that the key limiting factor isn't the optical/electronic precision of the CMOS sensor concept used, but the finite precision of the mechanical components.     

Comparison of GaN and In<Subscript>0.04</Subscript>Ga<Subscript>0.96</Subscript>N <Emphasis Type="Italic">p</Emphasis>-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes

We have compared the effects of Mg-doped GaN and In_0.04Ga_0.96N layers on the electrical and electroluminescence (EL) properties of the green light emitting diodes (LEDs). To investigate the effects of different p-layers on the LED performance, the diode active region structures were kept identical. For LEDs with p-InGaN layers, the p-In_0.04Ga_0.96N/GaN polarization-related EL peak was dominant at low current levels, while the multiple-quantum-well (MQW) peak became dominant at higher current levels, different from LEDs with p-GaN layers. Also, LEDs with p-InGaN exhibited slightly higher turn on voltages (V _on ) and forward voltages (V _f ) compared to LEDs with p-GaN layers. However, the MQW related EL intensity was much higher and diode series resistance lower for LEDs with p-InGaN layers compared with LEDs with p-GaN, showing possible improvements in output power for LEDs with p-InGaN layers. The diodes with p-GaN layers typically showed V _f of ∼3.1 V at a drive current of 20 mA, with a series resistance of ∼24.7 Ω, while diodes with p-InGaN showed V _f of ∼3.2 V, with a series resistance of ∼18.5 Ω, for device dimensions of 230 μm by 230 μm.     

Dependence of opto-electric properties of (semi-)conducting films in polymer based solar cells on viscous shear during the coating process

Organic photovoltaic is a promising technology for low-cost energy conversion. One of its major challenges is the transfer of the manufacturing process to a continuous roll-to-roll process. Previous research showed that the coating method has a significant impact on film properties, which may be explained by a shear-rate induced crystallization of the polymer–fullerene-blend.In this paper we report on a controlled variation of the shear-rate during slot-die coating of photoactive and conductive layers for polymer solar cells. Light absorption of photoactive layers increased towards higher coating speed and thus higher shear-rate by up to 28% from 0.6 m/min to 12 m/min. The currently lower performance of roll-to-roll processed solar cells, compared to laboratory scale devices may be increased by intentionally applying a high shear rate during the coating process. In contrast, a shear induced crystallization is insignificant for conductive (PEDEOT:PSS and Ag-nanoparticle) films, where conductivity decreased when the operating point approached the stability limit. Thus, a low capillary number is desirable for PEDOT:PSS layers, whereas the performance of the photoactive layer increased within the investigated velocity range. These tendencies, shown here for a standard material system (P3HT:PCBM), are substantial for the design of a roll-to-roll process for efficient polymer solar cells.     

Highly Branched Phosphorescent Dendrimers for Efficient Solution‐Processed Organic Light‐Emitting Diodes

Intermolecular interactions play a crucial role in the performance of organic light‐emitting diodes (OLEDs). Here we report the photophysical and electroluminescence properties of a fac‐tris(2‐phenylpyridyl)iridium(III ) cored dendrimer in which highly branched biphenyl dendrons are used to control the intermolecular interactions. The presence of fluorene surface groups improves the solubility and enhances the efficiency of photoluminescence, especially in the solid state. The emission peak of the dendrimer is around 530 nm with a PL quantum yield of 76 % in solution and 25 % in a film. The photophysical properties of this dendrimer are compared with a similar dendrimer with the same structure but without the fluorene surface groups. Dendrimer LEDs (DLEDs) are prepared using each dendrimer as a phosphorescent emitter blended in a 4,4′‐bis(N‐carbazolyl)biphenyl host. Device performance is improved significantly by the incorporation of an electron‐transporting layer of 1,3,5‐tris(2‐N‐phenylbenzimidazolyl)benzene. A peak external quantum efficiency of 10 % (38 Cd A^–1) for the dendrimer without surface groups and 13 % (49.8 Cd A^–1) for the dendrimer with fluorene surface groups is achieved in the bilayer LEDs.     

高效率高精度LED控制驱动电路设计

分析了LED特性及其驱动要求,设计基于PT4115的LED控制驱动器,并以此为例研究和实验分析了目前主流LED驱动技术存在的问题及有待改进的方面,给出了降低电路功耗和提高电流控制精度的改进方案:通过对反馈信号差分放大使等效反馈电阻减小来达到降低电路功耗的目的;在反馈控制电路中引入双积分电路使电路输出恒流性能好,从而提高了电流控制精度。经实验验证说明设计方案可行有效,为LED的控制驱动提出了新的思路和方法。     

非制冷红外热成像技术的发展与现状

非制冷红外焦平面技术在过去的几年内飞速发展,非制冷焦平面由原来的小规模,发展到中、大规模320×240和640×480阵列,在未来的几年内有望获得超大规模的1024×1024非制冷焦平面阵列。像素尺寸也由50μm减小到25μm,提高了焦平面的灵敏度,使非制冷红外热成像系统在军事领域得到了成功应用,部分型号已经装备于部队,并受到好评。今后,随着焦平面阵列规模的不断增大、像素尺寸的进一步减小,非制冷热成像系统在军事领域的应用将越来越广泛,尤其在轻武器瞄具、驾驶员视力增强器、手持式便携热像仪等轻武器方面,非制冷热成像系统在近年内有望逐步取代价格高、可靠性差、体积大等笨重的制冷型热成像系统。