一种0.5μm GaAs PHEMT工艺的单刀九掷射频开关芯片

描述一个基于0.5μm GaAs PHEMT工艺的射频开关芯片的设计实例.该开关为单刀九掷,包括GSM系统四个通信波段的两条发射通路和四条接收通路以及TD-SCDMA系统三个通信波段的三条收发通路.通过采用一种直流升压驱动电路来改善线性度,可以达到射频开关SJ功率容量为35 dBm,芯片的实测指标为所有通路的插入损耗不...     

射频高Q值MLCC的设计和工艺

为了提高射频多层陶瓷电容器( MLCC)的Q值,采用NPO瓷粉、钯银内电极浆料和银端电极浆料等为原材料制备MLCC.研究了设计和工艺对所制MLCC的固有寄生参数Rs和Ls的影响.结果表明:特殊的设计能减小内电极电阻和内外电极的接触电阻;合适的内电极厚度保证了烧结后内电极良好的连续性;合理的倒角和烧端工艺保证了内外电极的...     

特种传声器管可靠性分析

驻极体电容传声器(简称话筒)其专用结型场效应( JFET)与正向箝位二极管D1组成简单组合器件,称之为传声器管.该产品由P+N结栅控制沟道电流,不同于MOST的绝缘栅结构.因此在设计中并没有静电放电(ESD)防护装置.并且执行的标准截然不同,随着传声器管的应用逐渐扩大,要求提高电性能;为了抗射频(RF)噪声干扰在传声器...     

GSM射频芯片内RC时间常数测量电路的设计

针对集成电路工艺容差所引起的器件偏差,设计了一款RC时间常数测量电路,适用于GSM系统的多相滤波器模块.电路采用可编程电容阵列,可快速调谐,以保证模块稳定.仿真结果表明,采用5位数控方式调谐电容阵列,调谐时间误差不超过三个时钟周期,满足系统要求.     

某通信自动测试系统中射频适配器的设计

为了提高某通信自动测试系统的灵活性和稳定性,设计了一种由各类微波器件和控制电路以及控制软件等组成射频适配器.射频适配器集成于研制的通信自动测试系统中,可对被测件和测量仪器进行快速的自动通路切换和组合,同时可对射频信号进行下变频、加干扰等操作,达到自动测试的目的.通过测试数据证实该射频适配器在系统中的应用是合格的,提高了...     

一种用于超宽带接收机的CMOS可变增益低噪声放大器

本文介绍一种符合中国超宽带应用标准的工作频率范围为4.2-4.8 GHz的CMOS可变增益低噪声放大器(LNA)。文章主要描述了LNA宽带输入匹配的设计方法和低噪声性能的实现方式,提出一种3位可编程增益控制电路实现可变增益控制。该设计采用0.13-μm RF CMOS工艺流片,带有ESD引脚的芯片总面积为0.9平方毫米。使用1.2 V直流供电,芯片共消耗18 mA电流。测试结果表明,LNA最小噪声系数为2.3 dB,S(1,1)小于-9 dB,S(2,2)小于-10 dB。最大和最小功率增益分别为28.5 dB和16 dB,共设有4档可变增益,每档幅度为4 dB。同时,输入1 dB压缩点是-10 dBm,输入三阶交调为-2 dBm。     

Influence of substrate temperature on the performance of zinc oxide thin film transistor

Top-contact thin film transistors（TFTs） using radio frequency（RP） magnetron sputtering zinc oxide （ZnO） and silicon dioxide（SiO₂） films as the active channel layer and gate insulator layer,respectively,were fabricated.The performances of ZnO TFTs with different ZnO film deposition temperatures（room temperature, 100℃and 200℃） were investigated.Compared with the transistor with room-temperature deposited ZnO films, the mobility of the device fabricated at 200℃is improved by 94%and the threshold voltage shift is reduced from 18 to 3 V（after 1 h positive gate voltage stress）.Experimental results indicate that substrate temperature plays an important role in enhancing the field effect mobility,sharping the subthreshold swing and improving the bias stability of the devices.Atomic force microscopy was used to investigate the ZnO film properties.The reasons for the device performance improvement are discussed.     

An ultra-low-power RF transceiver for WBANs in medical applications

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks(WBANs)in medical applications is presented.The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs.The transceiver consists of a main receiver(RX)with an ultra-low-power free-running ring oscillator and a high speed main transmitter(TX)with fast lock-in PLL.A passive wake-up receiver(WuRx)for wake-up function with a high power conversion efficiency(PCE)CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power.The chip is implemented in a 0.18μm CMOS process.Its core area is 1.6 mm~2. The main RX achieves a sensitivity of-55 dBm at a 100 kbps OOK data rate while consuming just 210μA current from the 1 V power supply.The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is-15 dBm and the PCE is more than 25%.     

Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing

This paper investigates the effect of a non-uniform gate-finger spacing layout structure on the avalanche breakdown performance of RF CMOS technology.Compared with a standard multi-finger device with uniform gate-finger spacing,a device with non-uniform gate-finger spacing represents an improvement of 8.5%for the drain-source breakdown voltage(BV_ds) and of 20%for the thermally-related drain conductance.A novel compact model is proposed to accurately predict the variation of B V_ds with the total area of devices,which is dependent on the different finger spacing sizes.The model is verified and validated by the excellent match between the measured and simulated avalanche breakdown characteristics for a set of uniform and non-uniform gate-finger spacing arranged nMOSFETs.     

射频优化在CDMA网络日常网优中的应用

本文简单介绍了射频优化的基本原理,结合实际的网优工程,验证了射频优化是密集城区无线网优的一个非常好的方法.