液压阀冲蚀磨损特性分析与结构探讨

以传统正顶杆结构的高水基平面先导阀为研究对象,将计算流体动力学理论(CFD)与冲蚀理论相结合,建立高水基液压阀流体湍流和冲蚀的数学模型.通过可视化模拟,分析了煤粒对高水基平面阀不同部位的冲蚀磨损分布.结果表明,平面阀的阀芯冲蚀磨损发生在节流口附近.此外,液压阀在开启过程中,由于阀芯的惯性使阀芯和顶杆间产生微动磨损.磨损的叠加,加剧了阀芯的磨损率,影响液压阀使用寿命.为此,提出了一种将正顶杆结构修改为侧顶杆结构可以减轻阀芯磨损的新方法.     

催化剂组分对制取单壁碳纳米管的影响

采用温控电弧炉,以FeS,Ni,Mg的混和粉末作为催化剂,起弧电压为32V,放电时间为10min;研究了催化剂组成与成分对制取单壁碳纳米管的影响,确定了优化参数。在环境温度为600℃时,起弧电流为100A,催化剂FeS/Ni/Mg的组成和成分含量分别为2∶1∶2(%),5%,氦气气氛,气氛真空度为5.7×104Pa,单壁碳纳米管的产量和纯度都分别达到了12g/h和70%上,其管径为1.24～1.36nm。     

弧焊设备骚扰电压和辐射发射的测量

根据GB15579．10-2008的要求,弧焊设备的传导骚扰电压和辐射骚扰测试存在不同测量方法,而且均符合标准的规定,通过理论分析和实践检验,得出合理的测量布置,为实际测量操作提供参考。     

电气火灾故障电弧检测方法的研究

电气火灾频繁发生,对人类的财产及生命安全造成极大危害。故障电弧是造成电气火灾的重要原因。实现全面而有效的对故障电弧的检测是本文的研究内容。文中通过比较确定了以电流信号作为检测物理参数．采用小波变换对电弧故障检测进行了研究。首先构造了小波函数,然后进行了故障电弧的小波奇异性检测,最后运用小波逼近的方法对电流信号进行了分析。     

Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers

The practicality of plasma etching, combined with low temperature and directional process capabilities make it an integral part of the IC manufacturing process. A significant cause of damage to wafers during plasma processing is arcing damage. Plasma arcing damage results in large pits and non-uniformities on the wafer surface which can lead to wafer breakage and high yield losses.Thus a non-destructive wafer damage metrology is crucial to the understanding of wafer failure mechanisms. We report on the successful use of a combined suite of non-destructive metrology techniques to locate the arc damage sites and examine the physical processes which have occurred as a result of the damage. These consist of 3D X-ray diffraction imaging (3D-XRDI), micro-Raman spectroscopy (μRS), and scanning electron microscopy (SEM).In the case of the two examples examined in this study the plasma induced damage on the wafer surface appears as regions of damage ranging from 100 μm to 1000 μm in diameter. 3D-XRDI shows that the strain fields propagate out from the damage site in all directions, with the damage penetrating up to ? of the way through the substrate. K-means clustering and false colouring algorithms are used to highlight the regions of interest in 3D-XRDI, and to enhance the analysis process. Sectioning of the 3D images has enabled non-destructive imaging of the internal damage in the samples at any location. Micro-Raman spectroscopy results indicate the presence of both crystalline and amorphous silicon. Strain measurements at the damage site show tensile strains as high as 500 MPa in certain situations, with strain levels increasing from the surface towards the bottom of the dislocation cell structures, which can be distinguished in the synchrotron X-ray topographs. 3D-XRDI and μRS results are in close correlation, proving the potential for 3D-XRDI as non-contact, non-destructive metrology particularly suited to these problems.     

钛合金表面耐冲蚀Zr(AlCu)N涂层的结构与性能

为了提高钛合金TC6的耐冲蚀性能,采用磁控溅射技术在钛合金上沉积不同Zr(A1Cu)N涂层,考察了涂层的硬度、韧性和耐冲蚀性能,采用场发射扫描电镜(FESEM),X射线衍射(XRD)和X射线光电子能谱(XPS)分析其微观结构.结果发现:向ZrN涂层中加入20at％Cu后(Zr0.8Cu0.2N),显著提高了涂层的韧性,...     

引入形态学处理的去隔行自适应算法

分析了现有的各种去隔行算法,在此基础上,将形态学处理引入基于运动检测的自适应去隔行技术中,对隔行图像进行精确的场内插值,通过运动检测将图像中的像素进行分类,针对不同类型的像素点自适应采取不同的插值算法.     

Research on Effect of Adding Nanomaterial to Propellant on Gun Barrel

The barrel lifes of three small caliber rifles were tested by using the propellant with nanomaterial and the standard propellant respectively. The test results show that the service life increases observably due to adding nanomaterial to the propellant. Then, the influence of the nanomaterial on the tube was researched by splitting the two barrels tested and detecting their inner surfaces. It was found that the erosion of the barrel bore is reduced observably by using the propellant with nanomaterial. And it makes the volume and the size of the gun chamber change less. Therefore, the barrel life can be prolonged by adding the nanomaterial in the propellant.     

继电器触头的电蚀机理研究

由电弧、火花等原因引起的电侵蚀是继电器触头侵蚀的表现形式之一,严重时将造成触点无法工作,继电器失效,从而影响整个电气系统的正常运行。分析了继电器触头电蚀中材料转移和熔融喷溅的机理．总结了电蚀的3种主要影响因素：机械因素、电气因素、材料因素,以及针对这些因素,应采取的相应保护措施。     

新型碱性精抛液对300mm铜膜全局平坦化的影响

The copper removal rate and uniformity of two types copper slurries were investigated, which was performed on the 300 mm chemical mechanical planarization （CMP） platform. The experiment results illustrate that the removal rate of the two slurries is nearly the same. Slurry A is mainly composed ofa FA/OI1 type chelating agent and the uniformity reaches to 88.32%. While the uniformity of slurry B is 96.68%, which is mainly composed of a FA/OV type chelating agent. This phenomenon demonstrates that under the same process conditions, the uniformity of different slurries is vastly different. The CMP performance was evaluated in terms of the dishing and erosion values. In this paper, the relationship between the uniformity and the planarization was deeply analyzed, which is mainly based on the endpoint detection mechanism. The experiment results reveal that the slurry with good uniformity has low dishing and erosion. The slurry with bad uniformity, by contract, increases Cu dishing significantly and causes copper loss in the recessed region. Therefore, the following conclusions are drawn： slurry B can improve the wafer leveling efficiently and minimize the resistance and current density along the line, which is helpful to improve the device yield and product reliability. This investigation provides a guide to improve the uniformity and achieve the global and local planarization. It is very significant to meet the requirements for 22 nm technology nodes and control the dishing and erosion efficiently.