软开关弧焊逆变电源外特性的理论分析

通过分析移相全桥软开关弧焊电源工作特性,提出了基于峰值电流反馈控制软开关弧焊电源拓扑结构,运用电路分析方法把全桥弧焊电源等效为Buck模型,在不同负载条件下,Buck模型分别工作于电感电流连续方式和电感电流断续方式,运用电路知识对移相全桥零电压脉宽调制器稳态运行单周期波形图参数进行了理论计算,对模型的外特性工作点边界进行详细分析,通过分析计算证明了弧焊电源外特性形成机理,并给出一种所需外特性的实现电路.结果表明,软开关弧焊电源外特性边界曲线直接决定了焊接工艺参数的调节范围,通过不同的控制策略可以实现弧焊电源的所需外特性.     

WC和Al2O3对氩弧熔覆FeAlCoCrCuTi0.4高熵合金涂层组织和耐冲蚀性能影响

利用氩弧熔覆技术制备了FeAlCoCrCuTi0.4,WC/Al2O3-FeAlCoCrCuTi0.4高熵合金涂层,并通过XRD,SEM,EDS,硬度测试和冲蚀磨损测试等方法,探究了WC和Al2O3的添加对FeAlCoCrCuTi0.4高熵合金涂层显微组织和性能的影响.结果表明,通过氩弧熔覆技术所制备的合金涂层表面成形性良好,无孔洞、裂纹等缺陷产生,与基体呈高强度冶金结合.WC和Al2O3的添加对涂层稀释率的降低有显著作用.三种涂层都是主要由Bcc相(Fe-Cr固溶体)构成,晶粒以胞状树枝晶形式存在.添加WC后,晶粒细化明显,在各种强化作用下涂层硬度为685.8HV.且WC和Al2O3的添加显著提高了涂层耐冲蚀磨损性能,耐磨性几乎可以达到FeAlCoCrCuTi0.4高熵合金涂层的2倍.     

磁场频率对Fe5自熔合金性能的影响

在低碳钢表面进行Fe5合金等离子弧堆焊时外加纵向磁场,对堆焊试样进行磨损和硬度试验,采用显微电镜和扫描电镜对堆焊层显微组织进行分析,研究磁场频率对堆焊层金属的硬度和耐磨性的影响规律.结果表明,外加纵向磁场通过电磁搅拌作用细化堆焊层金属的组织,并控制硬质相的形态及分布;堆焊层的硬度和耐磨性随磁场的频率变化而变化并存在最佳值,在适当的磁场频率作用下电磁搅拌达到最佳效果从而提高堆焊层金属的综合力学性能.     

基于弱周期多通道信号正态重复率理论的CO_2弧焊监测

受到弧焊稳定性自动化监测需求的驱使和启发,创新性地提出了弱周期多通道信号正态重复率理论.该理论通过科学的数学推理,推导出描述周期间信号重复程度的特征值计算方程.为了克服实际采样时信号离散性带来的问题,突破性地把一个信号点细分为以正态分布散落在多维信号空间的无数微点,从而合理地计算方程中的重要参量——广义实面积,最终准确...     

High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

电子电气设备的熔断器、断路器保护

熔断器、断路器是电子电气设备最常用的保护电器,熔断器可以实现过载、短路保护,断路器除具上述功能外,还能实行失压保护.根据线路特点和所保护的设备,采取相应的保护设施,确保用电安全.     

填丝TIG焊接Mo—Cu合金与18-8不锈钢接头的微观组织

采用填丝钨极氩弧焊（TIG）对Mo—Cu合金与18—8不锈钢进行焊接．采用金相显微镜、扫描电镜、显微硬度计及x射线衍射仪等对Mo—Cu／18—8接头的微观组织、显微硬度、元素分布及熔合区附近的物相组成进行分析．结果表明,Mo—Cu合金侧的熔合区为马氏体和奥氏体的混合组织,焊缝和18—8钢侧的熔合区为奥氏体和铁素体双相组...     

高速脊波导激光器寄生电容的分析

高速调制半导体激光器光源是光纤通信系统、相控阵雷达等的关键器件。高速激光器的寄生电容是影响其调制带宽的因素之一。为了减小寄生电容,针对脊波导结构激光器的电容,采用计算机模拟与实际测试相结合的方法,进行了理论分析和实验验证。结果表明,其寄生电容大小不仅与电极金属化面积有关,还与隔离沟的腐蚀深度有关。当腐蚀至波导层时,寄生电容减小到10pF以下。这一结论对实现激光器的高速调制是非常有意义的。     

发展高电压等级真空断路器的技术问题探讨

本文对发展高电压等级真空断路器的关键技术问题，如触头材料，灭弧室耐压特性、电弧特性、弧后特性、波纹管设计及触头运动特性等进行了探讨，可为高电压等级真空断路器的设计提供依据。