The High Field Project at Dresden/Rossendorf: A Pulsed 100 T/10 ms Laboratory at an Infrared Free-Electron-Laser Facility

This article describes the project to build a pulsed magnetic field user laboratory at the Forschungszentrum Rossendorf near Dresden. Using a 50 MJ/24 kV capacitor bank, pulsed fields and rise times of 100 T/10 ms, 70 T/100 ms, and 60 T/1 s should be achieved. The laboratory will be built next to a free-electron-laser-facility for the middle and far infrared (5 to 150 µm, 2 ps, cw). We describe the work which has been performed until now to start the construction of the laboratory in 2003: coil concepts and computer simulations, materials development for the high field coils, and design of the capacitor bank modules. In addition, a pilot laboratory has been set up where fields up to 62 T/15 ms have been obtained with a 1 MJ/10 kV capacitor module. It is used to gain experience in the operation of such a facility and to test various parts of it. In this test laboratory special devices have been developed for measurements of magnetization and magnetoresistance, and have been successfully used to investigate various materials including semiconductors and Heavy Fermion compounds. In particular, metamagnetic transitions in intermetallic compounds and the irreversibility field of a high-T _c superconductor have been determined. Shubnikov–de Haas oscillations have been observed in the semimetallic compound CeBiPt. Resistance relaxation has been observed to start less than 1second after the field pulse. It could be shown for the first time that nuclear magnetic resonance (NMR) is detectable in pulsed fields.     

爆破切口形状对细高建筑物倒塌效果的影响

分析了爆破拆除细高建筑物时产生偏斜，前冲和后坐的原因，提出采用梯形和倒梯形爆破切口以准确控制倒塌方法，前冲和后坐。     

开关电流技术：一种新的模拟抽样数据处理方法

开关电流（ＳＩ）技术是一种新的模拟抽样数据处理技术，介绍了开关电流电路的基本单元结构，讨论了目前开关电流技术中存在的问题及其解决方法。对开关电流技术与开关电容技术的一些基本特征进行了比较，ＳＩ技术不仅结构简单，而且与标准ＣＭＯＳ工艺兼容，可望替代开关电容电路。     

片式阻容元件的现状和发展方向

在国外的片式元器件（ＳＭＤ）中，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。     

本征吸除硅片特性研究

本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60％,以上优品率≥85％。     

基于超图的产品族结构模型的研究

产品族结构模型是对系列化和组合产品各种复杂关系的综合和表达，它的合理性是产品配置设计过程的基础，超图能够表达是一般离散结构，而结构化超图表达了集合元素之间的层次关系，利用结构化超图模型来构造产品族结构模型，并给出了配置设计算法，最后用一个实例来验证方法的可行性。     

Determination of generation lifetime fromC-t transients under linear voltage ramp bias

When a linear voltage ramp is applied to the gate of a MOS capacitor, a capacitancetime (C-t) transient is observed. The MOS capacitor is biased into strong inversion before applying the voltage ramp in order to eliminate surface generation. FromC-t transient curve obtained experimentally the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted fromC-t curves under varying voltage sweep rates are close each other, and they are consistent with the lifetimes extracted by saturation capacitance method.     

基于小波熵的电容器扰动识别和定位

对投电容器扰动识别和定位的方法进行了改进。针对其他此类方法的不足，比如在电压幅值低时投电容器扰动的识别、定位“可信度不高”等，文中通过提取小波变换的特定层的系数，对需要识别的电容器扰动的分解信号相对增强，而其他扰动的分解信号相对减弱，然后再提取熵特征值，结果表明它可以作为识别低电压时投电容器扰动的依据。在对电容器扰动进行定位时，参考了功率和能量定位法，并对其进行了改进。仿真分析证明，在电压幅值较低时，可以准确和可靠地对电容器扰动进行识别和定位。