一种速度优化的流水线模数转换电容误差平均技术

无源电容误差平均技术是一种本质线性(Inherently Linear)的流水线模数转换电容失配校准技术,但其转换速度是传统技术的一半.为了提高速度,本文提出了一种改进的电容误差平均技术.该技术从减少一个转换周期所需的时钟相数目和减少每个时钟相的时间两个方面来优化速度.电路分析和MATLAB仿真表明,在两种典型的情况下,改进的技术能将速度提高52%(跨导放大器为开关电容共模反馈)和64%(跨导放大器为非开关电容共模反馈)以上.改进的技术更适用于高速高精度及连续工作的应用场合.     

新型低压抽屉式开关柜在冶金系统的应用

介绍新型低压抽屉式开关柜的结构性能和特点，并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。     

SMT测试技术

主要介绍了当前用于检测组装后PCB的缺陷和故障的一些常见测试技术 ,并对未来的发展趋势进行了初步探讨     

开关稳压电源用铝电解电容器的失效机理

概述了开关稳压电源用铝电解电容器的工作状态和失效模式，着重讨论了开关稳压电源用铝电解电容器的开路失效和击穿失效机理。     

充气集合式高电压并联电容器的几点改进

BAMHL1 1 /3- 72 0 0 - 1× 3W是在总结以往充气集合式高电压并联电容器产品优点的基础上 ,为优化大容量产品结构 ,提高绝缘可靠性和设备技术经济性能而开发的项目。本文着重介绍该产品的内部结构、外壳筋板结构和混合气体绝缘等几点改进。     

无功补偿对远距离供电节能降耗的分析

本文从理论上分析了在不同功率因数下不同供电距离的能耗对比及近年来进行无功补偿的情况,从而说明了无功补偿对远距离供电节能降耗的重要意义。     

一种考虑分布电容的模糊故障测距算法

提出了一种考虑分布电容的故障测距新算法。该算法基于微分方程描述的线路数学模型，利用单端信息对高压输电线路进行故障测距，保留了解微分方程算法的简单可靠、现实可行、不必考虑衰减直流分量和谐波及电网频率波动影响的特点，同时考虑过渡电阻和分布电容的影响，克服了传统解微分方程法中在经高阻接地故障时测距误差过大和忽略分布电容引起的故障定位不准确的缺点。为了检验算法的精度，进行了大量的动模实验。结果表明，算法原理正确并具有较高的测距精度。     

Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.     

Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

Stabilization of inter-area and/or oscillatory modes in large-scale power system by voltage impedance power system (VIPS) apparatus based on decentralized control scheme

New technologies such as power electronics have made it possible to change continuously the impedance of a power system not only to control power flow but also to enhance stability. A power system incorporating a variable impedance apparatus such as a variable series capacitor (VSrC) and high-speed phase shifter (HSPS) is called VIPS (Variable Impedance Power System) by the authors. This paper proposes a novel control method of VIPS apparatus such as VSrC and HSPS installed at an interconnecting point for stabilizing inter-area unstable and/or oscillatory modes. The proposed design method of the control system is a kind of hierarchical decentralized control method of a large-scale power system based on a Lyapunov function. Under the proposed control scheme, each subsystem can be stabilized independently by local controllers such as AVR, speed governor and PSS, and then the whole interconnected system can be stabilized by VIPS apparatus taking into account interactions between subsystems. The effectiveness and robustness of the VIPS apparatus control are shown by numerical examples with model systems including a large-scale power system.