Fabrication uncertainties and yield optimization in MEMS tunable capacitors

Intrinsic uncertainties of MEMS fabrication processes can severely affect the performance of devices because the tolerance ranges of these processes are relatively large and improvement of process accuracy is very expensive. Therefore, the analysis of fabrication uncertainties and their outcome on a device performance is a vital task before finalizing the design. In this paper, the effects of process inaccuracy on the performance of MEMS tunable capacitors are studied. Design parameters such as dimensions of electrodes and the initial gap between them and the stiffness of supporting beams are considered as random variables. The variation of these parameters within tolerance ranges drastically alters the capacitor's actual response from the desired one and results in low yield. Hence, design optimization with the objective of maximizing yield in early steps becomes very important. An effective method for yield optimization of MEMS capacitors under given fabrication uncertainties is introduced. The method utilizes aspects of the advanced first-order second-moment (AFOSM) reliability method to find a linearized feasible region to estimate the yield. The yield is calculated directly using the joint cumulative distribution function (CDF) over the tolerance box requiring no numerical integration and avoiding computational complexity. The optimal design verified by Monte-Carlo (M-C) simulation exhibits a significant increase in the yield. The main advantage of this method comparing to other design optimization methods is that the proposed method does not change the design topology or fabrication accuracy. It increases the yield by finding the optimum design variables as demonstrated in this paper.     

软件能力可信研究综述

能力可信是可信计算研究领域中的重要研究内容,它要求系统的功能是可信赖的,如今,系统的开发方式,系统规模、应用模式已发生巨大变化,这使得获得功能的可信赖性的任务更具挑战性,首先综述能力可信的概念、内涵等,详细介绍了能力可信的性能指标,从缺陷分析、可靠性模型、恢复技术三个方面讨论了能力可信的研究现状、和存在问题,最后对能力可信的未来发展趋势进行了探讨.     

A method for diagnosis of current faults in antenna arrays using neural networks

A method for detection of faulty elements in antenna arrays from far‐field radiation pattern is presented. The proposed technique finds variation of current from correct values in the faulty elements. A step wise approach is proposed to determine magnitude and phase of current excitation and location of faulty element using neural networks. The results with radial basis function neural network and probabilistic neural network are compared. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.     

基于子模块电容电压允许值的MMC均压控制策略

针对模块化多电平变换器（modular multilevel converter,MMC）传统子模块（sub-module,SM）均压策略存在的开关频率高、开关损耗量多、计算量大等问题,提出基于子模块电容电压允许值的均压控制策略。通过引入电容电压允许值变量,使得SM电压始终在规定的范围内运行,降低了功率器件损耗。与此同时,由于不需要每个控制周期对全部SM进行排序,进一步减少了控制策略的计算量。通过仿真结果验证了所提策略的有效性,可以显著减少单位时间内功率器件的开关次数。     

含电容单元的级联H桥七电平调制策略

针对传统三单元级联H桥直流电源电压利用率较低的问题,采用电容替代其中利用率较低的直流电源,构成含电容单元的级联H桥逆变器。围绕该型逆变器的调制策略及电容选择等问题,在载波层叠式脉宽调制策略的基础上,利用冗余开关状态改进现有调制策略。通过采集电容电压和输出电流,切换调制模式实现电容充放电控制。分析电容电荷量在不同调制度下的变化,得到电容电压稳定到参考值所需要满足的条件。考虑到电容纹波电压不超过参考值10%的要求,并结合最大连续放电区间,计算出最小参考电容,使逆变器达到最优配置。通过仿真和实验证明了新型调制策略可对电容充电并具有良好的稳压效果。     

基于M3C的低频输电系统不对称故障穿越控制策略

低频输电技术兼具高压交流及高压直流输电技术的优势,具有良好的发展前景。但当系统发生不对称故障时,子换流器间电容电压均衡被破坏,影响低频输电系统的安全运行。鉴于此,提出了一种(modular multilevel matrix converter, M3C)不对称故障穿越控制策略。该方案既能在一定程度上限制短路电流,又能平衡子换流器间电容电压,有效提高M3C不对称故障穿越能力。首先介绍M3C的拓扑和工作原理,分析M3C不对称故障期间的运行特性。进而在dq坐标系下推导故障侧电压电流,计算M3C故障侧有功功率表达式并对其中的直流分量部分进行提取。通过将直流分量不均衡抑制为零的方式确定负序电流参考值,用以实现故障侧的负序控制。最后,搭建基于M3C的低频输电系统模型,通过仿真验证了所提方案的有效性和可行性。     

一种新型MMC并联双端口子模块及其三阶段故障电流阻断机理

为使模块化多电平换流器(modular multilevel converter,?MMC)具备直流故障自清除能力和电容电压均衡能力,提出了一种新型并联双端口子模块：钳位双全桥子模块(clamp double full bridge submodule,?CD-FBSM)。该子模块器件成本和运行损耗较低,正常工作时相邻子模块之间具有多种协同运行模式,通过特有的并联模式可提高电容电压均衡度。故障闭锁时,模块内部电容并联、模块之间电容串联且反向接入电路,能够可靠阻断故障电流并均衡电容电压,有利于系统快速重启。此外,提出了三阶段故障电流阻断机理分析方法,对CD-FBSM的故障电流阻断过程进行了研究。通过Matlab/Simulink的仿真结果表明,所提子模块电容电压均衡度较高,可快速阻断故障电流,且故障电流阻断过程与理论分析一致。     

基于高频重构信号与Bayes-XGBoost的低压电弧故障辨识方法研究

针对低压配电系统中单个用电负载支路串联电弧故障辨识困难的问题,提出一种基于高频重构信号和Bayes-XGBoost的低压电弧辨识方法。首先,搭建多支路、多负载类型的低压电弧故障真型实验平台,并采集相关数据。其次,基于故障前后主线路电流高频信号变化规律,提出信号微弱变化叠加法重构故障有效信号。最后,建立适用于单个负载支路电弧故障辨识的XGBoost模型,并采用Bayes算法对模型多个超参数进行优化。实验结果表明,所提方法在多种工况下对单个负载支路电弧故障具有较高的辨识准确率。与6种主流故障分析方法对比,所提方法在精度、训练速度和泛化能力等方面展现出了显著的优越性,有利于实现低压配电系统单个负载支路电弧故障的可靠辨识。     

Tailoring of Photoluminescence Properties in All-Vacuum Deposited Perovskite via Ruddlesden–Popper Faults

Ruddlesden–Popper (RP) faults are well known in oxide perovskites, and are also observed in promising metal halide perovskites. However, the effect of RP faults on optical properties of perovskite has not been systematically investigated. In this study, it is found that RP faults are common planar faults in all-vacuum deposited CsPbBr₃-based perovskite polycrystal thin films, and the density of RP planar faults can be greatly increased by non-stoichiometric composition (Cs-rich) as well as reduced dimensionality (quasi-2D) strategies. The photoluminescence (PL) measurement reveals monotonically increasing peak intensities with higher densities of RP planar faults from Cs-rich, quasi-2D to Cs-rich & quasi-2D samples. The corresponding atomic-scale differential phase contrast maps indicate strongly confined charges within the RP planar fault network, which explains well the relationship between PL enhancement and the density of RP planar faults, and offers an alternative pathway for tailoring the optoelectronic properties of perovskite.     

Ultraviolet photodetectors and readout based on a-IGZO semiconductor technology

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R , a low response time t _{R E S} , and a good noise equivalent power value NEP .