Performance of positive and negative electrodes in amorphous manganese oxide supercapacitor

Using potassium permanganate and acetic manganese as the reactants, amorphous manganese oxide was prepared with mechanochemical method. XRD was used for microstructure characterization, while cyclic voltammetry and constant current charge-discharge were used for electrochemical performance testing. The positive electrode （PE） and negative electrode （NE） were investigated respectively in amorphous manganese oxide supercapacitor, aiming to find their different performances in charging-discharging. The results show that the crystalline structure is destroyed in both the PE and NE material during charge-discharge process. Thereinto, the NE suffers a bit more seriously. When cycling, the PE potential scope diminishes while the NE potential scope enlarges. The increased inner resistance makes the NE curves almost bended to be a right angle, but not the PE curves. The cell＇s equivalent series resistance （ESR） is more dependent on the NE, and the capacitance is mainly determined by the rapid descent of the NE potential range. The capacitances of the NE are highly rate-dependent, decreasing from 121.3 to 53.1 F/g, by 56.2%, over the range of 5-25 mV/s. However, the PE appears to be weakly dependent and its capacitance is only dropped by 22.1%.     

基于混合遗传算法的去耦电容网络设计

结合基于目标阻抗的设计方法,将混合遗传算法应用于PDN(电源分配网络)的去耦电容网络设计,对所需去耦电容器的种类和数目进行优化计算,同时与标准遗传算法和传统设计方法进行对比,借助Cadence电源完整性仿真工具验证设计结果的有效性和合理性。避免了传统设计需要借助EDA工具进行反复修改和验证的繁琐过程,同时减少了设计冗余,节省了PCB布局布线空间,为高频电路的PDN设计提供参考。     

独立光伏系统中超级电容充电控制策略研究

针对应用在独立光伏系统中的超级电容模组,提出采用Buck变换器对其进行充电,在充电过程中,进行过压保护,未达到额定电压时采用扰动观察法对光伏阵列进行最大功率点跟踪（MPPT）控制,仿真结果表明了充电过程中能跟踪光伏阵列的最大功率点,且具有过压保护功能。     

超大规模集成电路电源完整性设计中的滤波电容选择

集成电路技术的迅速发展,对电源完整性设计提出了更高的要求,设计者通常通过放置各种电容来降低电源噪声以及应对负载瞬态大电流的需求。讨论了电容技术发展对电源完整性设计带来的影响,同时通过对几种典型电容特性的分析,给出了在电源完整性设计中合理选择使用各种滤波电容的解决方案。     

一种减少SRM转矩脉动的控制策略研究

开关磁阻电机(SRM)由于其简单的结构和优异的性能,应用范围很广泛,但其本身结构导致了转矩脉动的产生,为了解决这个问题,文章研究了一种控制策略—直接转矩控制,以减少开关磁阻电机的转矩脉动。文章详细阐述了直接转矩控制的基本原理和实现方法,并对基于这种控制策略的开关磁阻电机的控制进行了Matlab仿真。仿真结果表明直接转矩控制能够有效地减少开关磁阻电机的转矩脉动,且控制方法简单,系统具有良好的动静态性能。     

输出本质安全型准谐振反激变换器分析

在给定的输入电压和负载变化范围内,分析了准谐振反激变换器的输入电压和负载电阻对其开关频率、输出纹波电压和峰值电感电流的影响,总结了其变化规律,得出了满足电气指标要求的电感和输出滤波电容最小设计值,使得最大输出短路释放能量最小。     

一种八阶开关电容带通滤波器的设计

采用数模混合CMOS工艺,设计了一种八阶开关电容带通滤波器以及辅助的低通抗混叠滤波器和平滑滤波器。仿真结果表明设计的开关电容滤波器实现了中心频率57KHz,通带增益20dB,3dB带宽3KHz,阻带衰减35dB。设计的开关电容滤波器在一款RDS解调芯片中成功实现了RDS信号的中频选择功能。     

Fabrication uncertainties and yield optimization in MEMS tunable capacitors

Intrinsic uncertainties of MEMS fabrication processes can severely affect the performance of devices because the tolerance ranges of these processes are relatively large and improvement of process accuracy is very expensive. Therefore, the analysis of fabrication uncertainties and their outcome on a device performance is a vital task before finalizing the design. In this paper, the effects of process inaccuracy on the performance of MEMS tunable capacitors are studied. Design parameters such as dimensions of electrodes and the initial gap between them and the stiffness of supporting beams are considered as random variables. The variation of these parameters within tolerance ranges drastically alters the capacitor's actual response from the desired one and results in low yield. Hence, design optimization with the objective of maximizing yield in early steps becomes very important. An effective method for yield optimization of MEMS capacitors under given fabrication uncertainties is introduced. The method utilizes aspects of the advanced first-order second-moment (AFOSM) reliability method to find a linearized feasible region to estimate the yield. The yield is calculated directly using the joint cumulative distribution function (CDF) over the tolerance box requiring no numerical integration and avoiding computational complexity. The optimal design verified by Monte-Carlo (M-C) simulation exhibits a significant increase in the yield. The main advantage of this method comparing to other design optimization methods is that the proposed method does not change the design topology or fabrication accuracy. It increases the yield by finding the optimum design variables as demonstrated in this paper.     

Ultraviolet photodetectors and readout based on a-IGZO semiconductor technology

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R , a low response time t _{R E S} , and a good noise equivalent power value NEP .     

基于分段电容阵列的改进型逐次逼近型ADC

为缩短高速模数转换器(ADC)中高位(MSB)电容建立时间以及减小功耗,提出了一种基于分段式电容阵列的改进型逐次逼近型(SAR)ADC结构,通过翻转小电容阵列代替翻转大电容阵列以产生高位数字码,并利用180 nm CMOS工艺实现和验证了此ADC结构。该结构一方面可以缩短产生高位数码字过程中的转换时间,提高量化速度;另一方面其可以延长大电容的稳定时间,减小参考电压的负载。通过缩小比较器输入对管的面积以减小寄生电容带来的误差,提升高位数字码的准确度。同时,利用一次性校准技术减小比较器的失配电压。最终,采用180 nm CMOS工艺实现该10 bit SAR ADC,以验证该改进型结构。结果表明,在1.8 V电源电压、780μW功耗、有电路噪声和电容失配情况下,该改进型SAR ADC得到了58.0 dB的信噪失真比(SNDR)。