与供应商的采购合作关系分析

对与供应商的采购合作关系进行了初步的分析，通过需求分析、选择供应商、正式建立合作关系、实施和加强合作关系4个过程展开，分别对筛选战略、供应管理计划流程、供应商的评估和选择、认证管理等关键问题进行初步分析，旨在使采购工作趋于完美。     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

电力系统谐波检测的现状与发展

准确、实时地对电力系统谐波进行检测有着重要的意义。本文根据电力系统谐波测量的基本方法，对近年来电力系统谐波检测的新方法进行了分析和评述。最后对电力系统的谐波测量进行了总结并提出了看法。     

户式中央空调的节能研究

对户式中央空调系统节能问题作了研究,从住宅建筑空调负荷的计算特点和方法、系统主机容量的确定、末端设备的选择到系统调节特性等诸多方面,综合考虑,并结合实际工程,阐述了影响户式中央空调能量消耗的各种主要因素和改进措施.     

宽工作电压范围单电源CMOS误差放大器

采用0.8μm标准数字CMOS工艺(VTN0=0.836V,VTP0=0.930V),设计并流片验证了具有宽工作电压范围(3～6V),可作SOC系统动态电源管理芯片内部误差放大器应用的单电源CMOS运算放大器。该误差放大器芯核同时具有适合低电压工作,并对工艺参数变化不敏感的优点。对于相同的负载情况,在3V的工作电压下,开环电压增益AD=83.1dB,单位增益带宽GB=2.4MHz,相位裕量Φ=85.2°,电源抑制比PSRR=154.0dB,转换速率Sr=2.2V/μs;在6V工作电压下,AD=85.1dB,GB=2.4MHz,Φ=85.4°,PSRR=145.3dB,Sr=3.4V/μs。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.     

Conventional Electron Microscopy and Electron Holography of Organic Solar Cells

Organic solar cells are a promising route towards large‐area and low‐price photovoltaic systems. The devices are composed of at least two layers: the hole‐transport layer and the electron‐transport layer. The light absorption can occur in one or both layers. At the interface of the layers the excitons are separated into charge carriers, and every layer deals with one type of carrier. Higher efficiencies of the separation process can be obtained by using a mixed layer containing both materials to obtain a very high interface area. Although the structure of the mixed layers used plays a crucial role for the device performance, until now the morphologies have not been elucidated. In order to correlate physical and optical findings with structure and morphology for the materials in question, electron microscopy experiments were performed on the single components as well as on the layer systems. The conventional electron microscope is a poor phase microscope. As consequence, weak‐phase objects like organic molecules have to be stained or imaged under strong defocus to produce an observable contrast. Artifacts caused by chemical staining and the appearance of Fresnel diffraction using the defocus technique represent the main problems of conventional microscopy. These artifacts can be avoided using electron holography. Holograms of ultrathin sections of thin layers composed of organic dye molecules were recorded. Subsequently, the phase images were reconstructed. In this manner, we succeeded in obtaining high‐contrast electron micrographs without applying staining or defocus. In addition, holograms of crystalline C₆₀ and zinc phthalocyanine were successfully recorded. Holography has been shown to be a useful tool to image beam‐sensitive and weak‐phase objects without artifacts.