低耗低剖面单层波导阵列天线研究

新型单层波导阵列天线具有低耗、低剖面、结构紧凑、实用性强等诸多优点, 在毫米波甚至太赫兹无线通信领域具有巨大应用潜力, 是当前的研究热点。 文章首先介绍了用于构建波导阵列天线的几类波导馈电网络的特点, 指出E 面波导馈电网络在毫米波应用领域的优势,接着针对E 面波导在单层并馈波导阵列天线和Butler矩阵多波束阵列天线方面的研究展开叙述,最后给出了可应用在单层波导阵列天线中的开口波导辐射单元在实现多频和圆极化等不同功能上的最新研究进展。 文章对于低耗低剖面单层波导阵列天线的发展及其应用具有参考价值。     

基于双 AWG 的新型 FBG 连续解调方法研究

为了实现基于阵列波导光栅(arrayed waveguide grating, AWG)的光纤布拉格光栅(fiber Bragg gratin, FBG)的连续解调, 提出了一种使用两个 AWG 联合解调的方法。 在一个 AWG 相邻两通道光谱中间插入另一个 AWG 对应通道的光谱,组成最小 的光谱周期;每次测量均从三通道中选择光强度最强的两个通道,利用相对光强解调算法,根据其波长—功率关系对 FBG 中心 波长进行精确测量。 使用两个 100 GHz 的 AWG 搭建了实验平台,并对温度传感器的解调进行研究。 实验表明,在 0. 8 nm 的系 统最小动态范围周期内,实现了对 FBG 的连续精确解调,系统的解调线性度达 0. 999 1,波长精度达±4 pm。 对数据和实验结果 进行数学分析,可以将 C 波段范围分成多个波长周期,系统可以实现在 C 波段 40 nm 全周期范围内对单个 FBG 的连续解调。 该方法不但可以实现在 C 波段范围内基于 AWG 对 FBG 的连续解调,使得运用 FBG 可以连续感测外界物理量变化,提高了系 统的实用性。 而且,该方法能够准确解调出波长信息,为实现对 FBG 的连续精确解调提供了借鉴信息,有利于进一步扩大 FBG 的应用领域。     

一种高功率微波有源相控阵天线单元设计

根据工程需要,本文提出了一种新型高功率微波有源相控阵天线单元,通过改造同轴波导变换器结构提升了功率容量和驻波特性,在同轴探针与阶梯波导之间引入方形金属块实现阻抗匹配,在波导末端添加过渡腔和匹配槽结构,并在喇叭段加入了单脊结构改变了波导阻抗,单脊伸出口径面降低了反射系数,进一步提升了功率容量。在X波段内VSWR小于2,带宽提升为1.25GHz,功率容量为33.24kW,比常规同轴波导变换器下喇叭天线功率容量提升了230％,7×7相控阵阵面可以实现1.62MW的发射功率,具备高功率微波发射能力。阵列可实现±30°圆锥扫描,满足高功率宽角度扫描的需求。     

基于铌酸锂薄膜的Y波导集成调制器设计

近年来,基于薄膜铌酸锂（TFLN）平台的高性能电光调制器以其小体积、低能量损耗等特点受到广泛关注。本文提出了一种新的具有垂直电极结构的Y波导铌酸锂薄膜电光调制器。研究了调制器的半波电压与缓冲层厚度之间的关系,优化了Y波导的设计参数,最后设计得到插入损耗<5 dB, 半波电压<1.5 V的高性能调制器。本文不仅为基于TFLN平台的小型化波导的设计和实现提供了思路,而且为制造高性能和多功能的电光调制器提供了实验依据。     

对无临近点信息干涉条纹的参数估计

用广义radon变换可以从运动目标产生的干涉条纹中估计出目标的运动参数和波导不变量。但是当干涉条纹中没有出现临近点时,用此方法估计不出真实值。为了解决此问题,提出了一种新的估计方法。主要过程是先从时频图中提取出干涉条纹轨迹,再去搜索与此轨迹误差最小的最优曲线,此曲线的参数值代表目标的运动参数和波导不变量。仿真和海试结果表明,在干涉条纹无临近点信息情况下,用广义radon变换估计的参数值与真实值偏差很大,但是文中提出的方法仍能估计出较准确的结果。     

Sub‐Micron Anisotropic InP‐based III–V Semiconductor Material Deep Etching for On‐Chip Laser Photonics Devices

Two InP‐based III–V semiconductor etching recipes are presented for fabrication of on‐chip laser photonic devices. Using inductively coupled plasma system with a methane free gas chemistry of chlorine and nitrogen at a high substrate temperature of 250 °C, high aspect ratio, anisotropic InP‐based nano‐structures are etched. Scanning electron microscopy images show vertical sidewall profile of 90° ± 3°, with aspect ratio as high as 10. Atomic Force microscopy measures a smooth sidewall roughness root‐mean‐square of 2.60 nm over a 3 × 3 μm scan area. The smallest feature size etched in this work is a nano‐ring with inner diameter of 240 nm. The etching recipe and critical factors such as chamber pressure and the carrier plate effect are discussed. The second recipe is of low temperature (?10 °C) using Cl₂ and BCl₃ chemistry. This recipe is useful for etching large areas of III–V to reveal the underlying substrate. The availability of these two recipes has created a flexible III–V etching platform for fabrication of on‐chip laser photonic devices. As an application example, anisotropic InP‐based waveguides of 3 μm width are fabricated using the Cl₂ and N₂ etch recipe and waveguide loss of 4.5 dB mm^?1 is obtained.

     

真空波导磁场控制型ECR溅射法的实验研究

微波电子回旋共振（delectroncyclotronresonance．ECR）等离子体溅射法是能在低温下制备高质量薄膜的最新镀膜技术．在该技术中,微波输入窗口易受金属粒子污染,导致微波在窗口反射,从而影响装置的正常工作。本文初步探讨了在ECR溅射装置中．采用真空波导与共振腔连成一体,在连接处配置磁轭（纯铁）．通过改变共振腔与波导连接处的磁场分布,能有效的避免微波窗口污染的技术途径,并较细致的研究了该装置的放电特性。     

Waveguide filter with improved stopband response using transversal slots

In this article, the design and realization of waveguide filter with improved stop‐band response is presented. By inserting transversal slots at the proper position of cavities, without disturbing the field distribution of the dominant mode, the second longitudinal resonant modes are radiated out. This caused the out‐of‐band frequency response of the filter to be improved. The validity of the proposed technique is confirmed by comparison between measurement values and simulation results from the finite element method through the commercial software (high frequency structure simulator). Also, to assure electromagnetic compatibility the slot surfaces are covered by absorbing material. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Pattern squint elimination for quad‐ridged conical and pyramidal horn antennas using bended probes

This article describes a new technique for pattern squint elimination of quad‐ridged conical and pyramidal horn antennas by introducing bended coaxial probes. Because of the phase difference and mutual coupling between vertical and horizontal polarizations, the radiation patterns of the conventional quad‐ridged conical and pyramidal horn antennas squint over a wide bandwidth. The proposed technique substantially reduces the phase difference and coupling between the two probes, so a significant improvement in the radiation patterns over the frequency band of 8–18 GHz can be achieved. The designed modified horn antennas are most suitable as a feed element in reflectors of radar systems and EMC applications. The proposed modified antennas have a voltage standing wave ratio (VSWR) less than 2.2 for the frequency range of 8–18 GHz. Moreover, the proposed antennas exhibit high gain, dual‐polarization performance, good isolation, low SLL, low back lobe, low cross polarization, and satisfactory far‐field radiation characteristics for the entire frequency band. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE 2010.