绿色盐水介质铜缓蚀剂的研究

以葡萄糖酸钙、钼酸钠、苯并三氮唑(BTA)、聚天冬氨酸、十二烷基葡萄糖苷、添加剂等合成了盐水介质铜缓蚀剂并用腐蚀失重法进行了评价.在22.5%盐水介质中,葡萄糖酸钙∶钼酸钠:苯并三氮唑∶聚天冬氨酸∶十二烷基葡萄糖苷=0.6∶1.0∶0.2∶0.3∶0.05,50℃时,铜缓蚀率可达98.5%以上.     

硅通孔化学机械平坦化中铜去除的电化学与选择性研究

利用极化曲线测量法研究了甘氨酸和过氧化氢浓度及pH对硅通孔(TSV)化学机械平坦化(CMP)中铜腐蚀的影响。结果表明:甘氨酸对铜的腐蚀随其浓度增大而增强;随着过氧化氢浓度增大,铜腐蚀电位逐渐增大;在p H为10时铜的腐蚀效果最佳。CMP实验表明,在不同浓度的甘氨酸和过氧化氢之下,抛光速率可调,达1.9~5.8μm/min,铜表面粗糙度为5~29 nm,铜钽去除速率比为20~50。     

滴定分析法测定铜的改进

提出在ＮＨ４ＨＦ２介质中，有ＳＣＮˉ存在下，以Ｉˉ３—淀粉为指示剂，硫代硫酸钠滴定铜的分析方法     

Pd deposited on Cu(110): a highly performant catalyst for the 1,3-butadiene hydrogenation reaction

The catalytic properties, with respect to the 1,3-butadiene hydrogenation reaction, of strained Pd films on Cu(110) (lattice mismatch 8%) has been probed as a function of the film thickness. The characterization of the adlayer has been made by the combined use of STM with LEED and AES. For deposits below 10¹⁵ Pd/cm² (i.e., about 1 ML) the catalytic activity is near zero. This is the consequence of the formation of a Pd–Cu surface alloy with tendency for Cu to migrate/segregate to the surface. The catalytic activity suddenly increases to reach a maximum value for about 3 ML; the activity is then one order of magnitude higher than that of the pure Pd(110) surface. This is the consequence of the presence of a strained Pd overlayer, with Pd surface atoms having very unusual geometry, and hence very peculiar electronic and chemical properties. The catalytic activity then decreases as the Pd coverage is increased, and tends to values near that of the pure Pd(110). Gradual relaxation of the film geometry towards that of the normal fcc Pd structure probably exists.     

Electrochemical investigations of copper behaviour in different cupric complex solutions: Voltammetric study

The electrochemical behaviour of copper has been investigated in different cupric complex solutions by cyclic voltammetry. In pyridinic and picolinic solutions the reduction of cupric complex occurred in two stages leading to Cu(I) and Cu(0), respectively. The electrodeposited copper is oxidized in two steps leading to Cu(I) and Cu(II) as in ammoniacal cupric complex solutions. In glycine, alanine, sulfamic acid and ethylenediamine solutions, the cuprous complex is an intermediate in the cupric complex reduction but it is not detected during the oxidation of the electrodeposited copper in these solutions. In EDTA and triethanolamine solutions, the cuprous complex is not observed. The rate of copper etching was determined in pyridinic and ammoniacal cupric solutions and was shown to be faster in ammoniacal cupric solutions than in the pyridinic solutions.     

Modelling of copper etching in aerated chloride solutions

The effect of dissolved oxygen on the rate of chemical etching of copper by acidic cuprous chloride solution was investigated numerically for the case of a rotating disc electrode (RDE). Copper dissolution in aerated acidic cupric chloride solutions of composition 3.5M CuCl2 + 0.5M HCl + 0.5M KCl and 3.5M CuCl2+0.5M HCl was investigated with consideration of the instantaneous homogeneous reaction 4CuCl32-+4H++O2rlhar4CuCl 3-+2H2O which takes place within the mass transport boundary layer. It was assumed that CuCl32- and O2 react instantaneously, resulting in the formation of a reaction plane which separated the mass transport boundary layer into two regions: a region adjacent to the electrode where oxygen was depleted, and a region adjacent to the bulk where CuCl32- was absent. A one-dimensional mathematical model was developed to predict the position of the reaction plane. The model accounted for diffusion, migration and fluid flow generated by an RDE and included nine species and five heterogeneous electrochemical reactions. The homogeneous redox reaction served to regenerate the chemical etchant solution and thus enhance the etch rate. With increasing oxygen concentration and rotation rate the reaction plane was found to move closer toward the electrode and thus the etch rate of copper increased. Addition of KCl increased the Cl- content in solution so as to shift the reaction plane toward the bulk.     

局部颜色特征与工艺参数融合的铜浮选入矿类型识别

针对铜浮选过程中矿源变化频繁而造成的浮选工况难以识别、生产过程不稳定等问题,在分析铜浮选流程特点的基础上,提出了一种局部颜色特征与关键工艺参数融合的铜浮选入矿类型识别方法.首先采用多元图像处理方法提取泡沫图像局部颜色特征,然后采用混合滤波、时间配准算法将其与关键工艺参数进行数据融合,最后用融合后的混合特征进行模糊聚类,得到隶属度矩阵和聚类中心.工业数据仿真结果验证了本文所提方法的有效性.     

Galvanostatic and microscopic studies of nodulation during copper electrolysis

The galvanostatic technique on a laboratory scale has been shown to be a useful tool in detecting the presence of nodules on the cathode during copper electrodeposition by using the value of the starting electrolytic potential and by the presence of a cathodic polarization peak on the potential–time curve. Studying the morphology of the deposit with a scanning electron microscope at various magnifications confirmed the galvanostatic results. It is postulated that inappropriate concentrations and/or ratios of the additives (thiourea, gelatin and chloride ions) are associated with a certain current density that generates intergranular microcracks due to adsorption of the additives and leads to the formation of nodules at the macroscale.     

添加剂对化学镀铜的影响

研究了亚铁氰化钾和α，α′-联吡啶对陶瓷表面化学镀铜沉积速率、阻抗、镀层晶体结构和外观的影响。加入亚铁氰化钾，铜沉积速率降低，阻抗增大，镀层外观得到改善，镀层晶体呈无序生长；α，α′-联吡啶的加入对铜沉积的抑制更明显，镀层晶体取向为（2，2，0）。     

半导体制冷在测压铜柱高低温校准中的应用

测压铜柱在高低温环境下使用时会带来较大的测压误差,必须进行高低温校准。针对当前测压铜柱高低温静态校准系统中的高低温加载部分使用不便的问题,提出了基于半导体制冷技术对其进行改进。对高低温箱的结构及温度测控系统进行了设计及研制,并进行了温度控制实验,高低温箱可控制在-40~50℃范围内,温度控制精度优于±0.5℃,满足了测压铜柱高低温静态校准的要求。