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91.
I.H. Song 《Thin solid films》2007,515(19):7598-7602
This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. 相似文献
92.
D.J. Bekers S.J.L. van Eijndhoven A.A.F. van de Ven 《Journal of Engineering Mathematics》2004,49(4):373-390
A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature. 相似文献
93.
随着电容测量技术的迅速发展,电容传感器在非电量测量和自动检测中得到广泛应用,但它在使用过程中也存在一些问题,针对在使用电容传感器过程中存在的几个问题,从电容传感器的原理和工作过程两个方面进行了讨论,并提出行之有效的处理方法。 相似文献
94.
Hinshaw Stephen P.; Carte Estol T.; Fan Catherine; Jassy Jonathan S.; Owens Elizabeth B. 《Canadian Metallurgical Quarterly》2007,21(2):263
The current study prospectively followed girls with attention-deficit/hyperactivity disorder (ADHD), along with a matched comparison sample, 5 years after childhood neuropsychological assessments. Follow-up neuropsychological measures emphasized attentional skills, executive functions, and language abilities. Paralleling childhood findings, the childhood-diagnosed ADHD group displayed moderate to large deficits in executive/attentional performance as well as in rapid naming relative to the comparison group at follow up (Mage 14.2 years). ADHD-inattentive versus ADHD-combined contrasts were nonsignificant and of negligible effect size, even when a refined, sluggish cognitive tempo subgroup of the inattentive type was examined. Although ADHD versus comparison group differences largely withstood statistical control of baseline demographics and comorbidities, control of childhood IQ reduced executive function differences to nonsignificance. Yet when the subset of girls meeting diagnostic criteria for ADHD in adolescence was compared with the remainder of the participants, neuropsychological deficits emerged even with full statistical control. Overall, childhood ADHD in girls portends neuropsychological and executive deficits that persist for at least 5 years. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
95.
Iwao Shimizu Yuji Naito Iwao Yamaguchi Katsuyuki Kaiho Hitoshi Mizoguchi Satoru Yanabu 《Electrical Engineering in Japan》2008,164(1):52-61
Using conventional high‐temperature superconducting wire, a model superconducting fault current limiter (SFCL) is made and tested. Solenoid coil using Bi2223 silver sheath wire is so made that inductance is as small as possible and a vacuum interrupter is connected in series to it. A conventional reactor coil is connected in parallel. When the fault current flows in this equipment, superconducting wire is quenched and current is transferred into the parallel coil because of voltage drop of superconducting wire. This large current in parallel coil actuates magnetic repulsion mechanism of vacuum interrupter. Due to opening of vacuum interrupter, the current in superconducting wire is broken. By using this equipment, current flow time in superconducting wire can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of parallel coil. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(1): 52–61, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20315 相似文献
96.
提出一种配电网电容电流测量的新方法,在零序电压互感器的开口三角侧串联一个可调电感,通过注入一个变频恒流信号寻找配电网的谐振频率,改变可调电感的数值后寻找另一谐振频率,联立2个谐振方程求解电容电流,该方法消除了电压互感器漏抗对测量的影响。开发了配电网电容电流测量仪,经模拟试验和现场测试表明,该方法具有安全、快捷、准确等特点,适用于中性点不接地或经随调式消弧线圈接地配电网。 相似文献
97.
This paper presents the mass transfer results from an impinging liquid jet to a rotating disk. The mass transfer coefficients were measured using the electrochemical limiting diffusion current technique (ELDCT). Rotational Reynolds number (Rer) in the range of 3.4 × 104–1.2 × 105, jet Reynolds number (Rej) 1.7 × 104–5.3 × 104 and non-dimensional jet-to-disk spacing (H/d) 2–8 were taken into consideration as parameters. It was found that the jet impingement resulted in a substantial enhancement in the mass transfer compared to the case of the rotating disk without jet. 相似文献
98.
99.
100.
The error of solution of Cauchy problems for systems of ordinary differential equations is estimated in the case where the
input data are approximate. It is shown how to prepare a program for computing the right-hand sides of the system automatically
and simultaneously. Diagrams are presented to illustrate the efficiency of parallelization.
__________
Translated from Kibernetika i Sistemnyi Analiz, No. 2, pp. 175–182, March–April 2007. 相似文献