Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

浮体门设计的探索与实践

水电站泄水道破坏修复工程,是一项风险高、难度大、前景广阔的系统工程。刘家峡水电站泄水道2号孔破坏修复的关键,是采用人工深水软导向浮体闸门封堵孔口,形成门后洞内旱地施工条件;龚嘴水电站10号冲砂底孔破坏修复的关键,增设浮体闸门采用自动潜行式浮体闸门封堵孔口,形成门后洞内旱地施工条件;哈萨克斯坦CHARDARA水电站SYNAS项目泄水底孔修复的关键,采用分次降水安装浮体闸门侧支承的方法,挡住引水发电机组的下游尾水,在泄水道进口检修门和流道出口之间形成门旱地施工。此3项泄水道修复工程在行业内没有先例,难度很大。整体方案具有创新性,并且均已高质量竣工并投入正常运行。     

复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的异常

研究了（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的非线性变化以及异常的原因。根据CM公式，随着系统中Sr（Zn1/3Nb2/3）O3的增多，τc的异常是由于氧八面体的畸变导致的相转变（对称性降低）所造成的（晶体结构由无序立方相向有序赝立方相的连续变化）。相转变的发生相应影响了极化以及极化模式，这是造成τc异常的根本原因。     

变压器事故原因分析

通过分析一次变压器事故的原因。指出变压器实际运行中存在的问题。并结合自己的工作经验提出科学的改进建议。     

可与氟树脂基板相匹敌的热可塑性树脂基板材料

概述了可以与氟树脂基板相匹敌的低介质特性的热可塑性树脂基板材料的开发和应用。     

SF6气体绝缘电容式电压互感器研制

本文介绍西容公司新研制的一种完全无油化的SF6气体绝缘电容式电压互感器,提出了关键技术问题解决方案和产品绝缘结构的设计思路.并介绍了研制成功的110kV和220kV系列产品的结构、技术参数、性能指标、试验考核情况和产品特点.     

微波介质谐振器介电参数的测量

本文讨论了微波介质谐振器介电参数测试技术。用研制的测试装置对多个介质样品进行了实测，结果表明，本文的分析与实际值是吻合的。该测试技术可对微波介质谐振器的复介电常数进行迅速、准确、可靠、宽频带、无损伤、自动化和批量检测，具有较强的实用性。     

现代通信产品静电防护技术导则

本导则提出了电子通信设备机房内静电荷的产生根源及静电放电对其设备正常运行的影响机理，提出机房内环境装修的静电防护措施及静电防护操作等，从而达到有效地控制静电荷的，确保电子通信设备安全可靠运行。本导则适用于以集成电路为核心的现代通信设备机房的设计和管理。