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51.
In this work, ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg1/3Nb2/3)4+ ions substituted ceramics. The addition of (Mg1/3Nb2/3)4+ ions enhances the bond energy in unit cell without changing the crystal structure of Li2MgTiO4, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: εr =?16.19, Q·f?=?160,000?GHz and τf =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li2MgTi0.7(Mg1/3Nb2/3)0.3O4-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with εr?=?16.32, Q·f?=?145,384?GHz and τf =??16.33?ppm/°C.  相似文献   
52.
53.
In this study, yttrium iron garnet co-doped with Zn and Zr atoms with a chemical formula Y3ZnxZrxFe(5−2x)O12 (x = 0.0-0.3) has been successfully prepared by the solid-state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y3ZnxZrxFe(5−2x)O12 were investigated. The microstructure analysis indicates that co-doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn–Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO2 appears once ≥ 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn–Zr co-doping method. Zn–Zr co-doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400°C).  相似文献   
54.
ABSTRACT

Social licence to operate (SLO) is a term that is finding increasing acceptance in a number of industries. Like all new terms, its precise meaning and implications are still being investigated. Using data from previous studies, this paper offers an analysis of the SLO of two case studies with each study being viewed separately through the grid of a distinct theoretical framework. Case study 1 looks at the development of differential social licence negotiated in the Hamlet of Cambridge Bay, Nunavut, as a result of an impact and benefit agreement negotiated between Tahera Diamond Corp. and the Kitikmeot Inuit Organisation in 2004. The study demonstrates that general acceptance of resource development can be uneven and reflect an unequal distribution of decision-making power. In case study 2, stakeholders of a failed mineral development project were queried across time about the specifics of the proposed mine development and were queried about resource development across different levels of consciousness. Perhaps, SLO is variable across different levels of consciousness. The paper concludes with observations about the variable nature of SLO acceptance across populations and across levels of consciousness within individuals. Perhaps, the concept of SLO is, in fact, complex, difficult to define and measure and, at this point, of limited utility as a measure of resource development acceptance.  相似文献   
55.
This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d33. The d33 is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d33 was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817.  相似文献   
56.
《Microelectronics Journal》2015,46(11):1012-1019
This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm2 and 0.08 mm2, respectively.  相似文献   
57.
In this work, we report the tuning effect of the Si substitution on the magnetic and high frequency electromagnetic properties of R2Fe17 compounds and their paraffin composites. It is found that the introduction of Si can remarkably improve the magnetic and electromagnetic properties of the R2Fe17 compounds, making the R2Fe17–xSix-paraffin composites excellent microwave absorption materials (MAMs). By introducing the Si element, their saturation magnetizations decrease slightly, while much higher Curie temperatures are obtained. Furthermore, better impedance match is reached due to the decrease of the high-frequency permittivity ε′ by about 40%–50%, which finally enhances the performance of the microwave absorption. The peak frequency (fRL) of the reflection loss (RL) curve moves toward high frequency domain and the qualified bandwidth (QB, RL ≤ ?10 dB) increases remarkably. The maximum QB of 3.3 GHz (12.0–15.3 GHz) is obtained for the Sm1.5Y0.5Fe15Si2-paraffin composite (d = 1.0 mm) and the maximum RL of ?53.6 dB is achieved for Nd2Fe15Si2-paraffin composite (d = 2.2 mm), both surpassing most of the reported MAMs. Additionally, a distinguished dielectric microwave absorption peak is observed, which further increases the QB in these composites.  相似文献   
58.
While wind and solar generation has increased dramatically over the past decade, there has been a much larger increase in gas generation (eia, 2019). This is driven in part by low gas prices but also in part by how electricity markets are organized. The intermittent nature of wind and solar generation increases the need for more flexible and reliable generation; a role gas plants fill well. However, current market structures and rules unfairly tip the balance in their favor compared to energy storage systems. They have created market barriers restrictive enough to prevent market participation of a technology key to a 100 % renewable grid: supercapacitors. Adjusting markets to remove the market barriers to supercapacitor and other energy storage systems will allow for increased renewable penetration while simultaneously improving grid performance and reducing costs.  相似文献   
59.
Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.  相似文献   
60.
ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.  相似文献   
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