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91.
92.
Nitric oxide reduction and carbon monoxide oxidation over carbon-supported copper-chromium catalysts 总被引:1,自引:0,他引:1
S. Stegenga R. van Soest F. Kapteijn J. A. Moulijn 《Applied catalysis. B, Environmental》1993,2(4):257-275
Carbon supported copper-chromium catalysts are shown to be very active for both the reduction of nitric oxide with carbon monoxide and the oxidation of carbon monoxide with oxygen. Mixed copper-chromium oxide active phases have good activity in the simultaneous removal of nitric oxide and carbon monoxide from exhaust gases. The influence of several catalyst variables has been investigated. The activity per volume of catalyst increases with increasing loading, while the intrinsic activity shows a maximum around C/M=100−50. An optimum catalyst for nitric oxide reduction and carbon monoxide oxidation has a copper/chromium ratio of 2/1. The apparent activation energy for the carbon monoxide oxidation over carbon supported copper-chromium catalysts is 77 kJ/mol, suggesting that the Cu---O bond rupture is the rate-limiting process. The reduction of nitric oxide takes place at higher temperatures. Since all catalysts have a low selectivity for molecular nitrogen formation at lower temperatures, the dissociation of nitric oxide is probably rate determining, resulting in a slightly reduced catalyst system. In an excess of carbon monoxide the reaction is first-order in nitric oxide and zero-order in carbon monoxide. Moisture inhibits the reaction by reversible competitive adsorption, whereas carbon dioxide does not. Oxygen completely inhibits the reduction of nitric oxide due to the more rapid reoxidation of the catalytic sites compared to nitric oxide. Therefore, the reduction of nitric oxide takes place only when all oxygen has been converted and, hence, is shifted to higher temperatures. As a possible consequence, the production of nitrous oxide is reduced. Nitric oxide and molecular oxygen react preferentially with carbon monoxide, so, in an excess of oxidizing component, gasification of the carbon support occurs at higher temperatures after carbon monoxide has been completely consumed. 相似文献
93.
94.
高质量ZnO薄膜的退火性质研究 总被引:3,自引:0,他引:3
在LP-MOCVD中,我们利用Zn(C2H5)2作Zn源,CO2作氧源,在(0002)蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜,并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后,(0002)ZnO的XRD衍射峰强度显著增强,c轴晶格常数变小,同时(0002)ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大,这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小,PL谱的带边发射则加强,并出现红移,蓝带发光被有效抑制,表明ZnO薄膜的质量得到提高。 相似文献
95.
氧化钨物理特征的测量 总被引:2,自引:0,他引:2
对铵钨青铜(ATB)、氢钨青铜(HTB),紫色氧化钨(TVO)和蓝色氧化钨(TBO)四种氧化钨粉的氮气吸附/脱附等温线数据的分析。可以得出其表面积,微孔体积,微孔分布,中孔体积,平均孔径和分数维数。吸附/脱附等温线数据的分析表明,TVO粉末具有最大的中孔体积,最小的微孔体积,最窄的孔径分布,最小的分数维数和最大的平均孔径,其有利于氢还原制取超细钨粉,而不利于掺杂工艺,HTB粉末具有最大的微孔体积,最宽的孔径分布,最高的分数维数和最小的平均孔径,对于掺杂工艺来说是有利的,ATB和ABO的上述参数界于TVO和HTB之间。结果表明,利用吸附/脱附等温线来研究氧化物的物理特征是一个很好的方法;在氧化钨用于氢还原工艺和掺杂工艺之前必须研究其物理特征。 相似文献
96.
新型高k栅介质材料研究进展 总被引:5,自引:0,他引:5
随着半导体技术的不断发展,MOSFET(metal-oxide-semiconductor field effect transistor)的特征尺寸不断缩小,栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著,将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料,能够在保持和增大栅极电容的同时,使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义;MOS栅介质的要求;主要新型高k栅介质材料的最新研究动态;展望了高k介质材料今后发展的主要趋势和需要解决的问题。 相似文献
97.
介绍了以菱锌矿为原料生产轻质氧化锌的方法,论述了反应酸浓度,煅烧温度,溶液PH值对实验的影响,并对生产工艺条件进行了研究。其工艺流程是将粉碎后的菱锌矿进行循环酸浸,净化后再直接和碳化母液反应,经沉降后再煅烧分解为轻质氧化锌,产品质量符合国家标准,视比容大,活性强,成本低,经济效益显著。 相似文献
98.
The Synthesis of Sulfated Titanium Oxide Nanotubes 总被引:1,自引:0,他引:1
Chiu-Hsun Lin Shu-Hua Chien Jiunn-Hsing Chao Chyi-Yang Sheu Yu-Cheng Cheng Ya-Jean Huang Chih-Hsiang Tsai 《Catalysis Letters》2002,80(3-4):153-159
TiO2 nanotubes can be prepared in gram quantities by treating anatase TiO2 powder with concentrated NaOH solution. These TiO2 nanotubes acquired strong acidity after being impregnated with sulfuric acid solution and calcined at 300 °C. The anatase TiO2 powder used to prepare the nanotube did not catalyze the esterification between cyclohexanol and acetic acid, while sulfated TiO2 nanotubes were very reactive toward the esterification reaction. 相似文献
99.
In the oxidation of TiAl alloys, the role of scale-growth stresses formed during oxidation has, thus far, been unknown. In the present paper the oxide-growth stresses were investigated by the deflection-test method in monofacial oxidation (DTMO) accompanied by acoustic-emission measurements. On unmodified surfaces the growth stresses are compressive and reach levels of around –100 MPa. At the same time, significant acoustic emission occurs indicating that even under isothermal conditions, stresses are relieved by a scale-cracking mechanism. For oxide scales on TiAl surfaces, which had been ion implanted with chlorine before oxidation, a very thin protective alumina layer is formed which, however, develops growth stresses in the range of several GPa, accompanied by intensive acoustic emission. In all stress–time curves, a dynamic situation is observed. This consists of phases of stress relief by scale microcracking and phases of stresses increase due to crack healing and further oxide growth. As a result, the level of stress as a function of oxidation time, is characterized by an oscillating course. 相似文献
100.
Low dielectric poly[methylsilsesquioxane‐ran‐trifluoropropylsilsesquioxane‐ran‐(2,4,6,8‐tetramethyl‐2,4,6,8‐tetraethylenecyclotetrasiloxane)silsesquioxane]s {P[M‐ran‐TFP‐ran‐(TCS)]SSQs} having various compositions were synthesized using trifluoropropyl trimethoxysilane, methyl trimethoxysilane and 2,4,6,8‐tetramethyl‐2,4,6,8‐tetra(trimethoxysilylethyl)cyclotetrasiloxane. The chemical composition of the polymers and the content of SiOH end‐groups were controlled by adjusting the reaction conditions, and they were characterized by 1H‐NMR. The thermally decomposable trifluoropropyl groups on the P[M‐ran‐TFP‐ran‐(TCS)]SSQ backbone and heptakis(2,3,6‐tri‐O‐methyl)‐β‐cyclodextrin (CD) were employed as pore generators. The dielectric constants of the porous CD/P[M‐ran‐TFP‐ran‐(TCS)]SSQ films were in the range 2.0–2.7 (at 100 kHz) depending on the concentration of the porogens, and showed no change over 4 days under aqueous conditions. The pore size of the films showed a bimodal distribution, with diameters of ca 0.5–1.0 nm for those originating from the trifluoropropyl groups and 1.7 nm from the CD. The elastic modulus and hardness of the 30 vol% CD‐blended film with a dielectric constant of 2.26 were 2.40 and 0.38 GPa, respectively, as determined by a nanoindenter. Copyright © 2005 Society of Chemical Industry 相似文献