一种新型传感结构的光学直流电流传感器

分析比较了多种直流大电流测量方法,指出直流测量设备高压侧无源化是未来高压测量设备的发展趋势。针对传统块状玻璃型电流传感器传感头加工难度大、直流解调算法难以精确解调出法拉第旋转角的缺点,采用一种基于双光源双输出条形传感头的新型无源式直流电流传感器。这种结构降低了传感头制作及加工难度,在双通道光路、电路不对称的情况下,能够将与被测电流成正比的直流信号从直流本底光强信号精确解调出来。试验结果表明,在300 ~3 000 A范围内,测量准确度优于0.5%,在光功率波动达25.2%、双光路光功率不对称度为34.2%的情况下,双光源双输出传感器相对误差变化范围为-0.4% ~ +0.42%,远高于相同测试条件下单光源双输出传感器的性能。     

平面分离双栅金属氧化物半导体场效应晶体管的设计与制作

提出并制作了一种全新的平面分离双栅金属氧化物半导体场效应晶体管,该器件垂直于沟道方向的电场为一非均匀场.理论计算、TCAD三维器件仿真以及实验结果均表明,通过改变该器件中任何一个栅极偏置电压,能够得到可以调节的输出特性(增益系数)及转移特性曲线,可以很方便地调节器件的阈值电压及亚阈值摆幅并具备低功耗特点.这为电路的设计及器件制作提供了更多的灵活性,既可以简化电路的设计又可以降低MOS集成电路制造工艺的复杂程度.平面分离双栅金属氧化物半导体场效应晶体管制作工艺与目前常规的CMOS工艺完全兼容.     

Reinforcing Paper Strength by Dual Treatment of a Cationic Water-soluble Polymer and Cellulose Nanofibril

Cellulose nanofibril (CNF) was used as the anionic component of two dual strengthening systems wherein polyamidopolyamine epichlorohydrin resin (PAE) or cationic starch (CS) was used as the cationic component. Their strengthening effects were investigated for low-basis-weight (30 g/m²) paper composed of a mixture of fully bleached softwood and hardwood pulp in a 4:1 mass ratio. Using the PAE/CNF or CS/CNF dual system, it was generally easier to achieve higher wet and dry tensile strengths of paper compared to the paper using the single PAE or CS system. For example, the paper using the PAE (0.4%)/CNF (0.3%) dual system exhibited 89% higher wet tensile strength than the paper using the single PAE (0.4%) system, and the paper using CS (1.3%)/CNF (0.3%) dual treatment showed 21% higher dry strength than that using the single CS (1.3%) system. However, the PAE/CNF system only showed small improvement in the dry strength of paper (11% higher than that of paper using the single PAE system), so did the CS/NFC system on wet strength improvement (only 17% higher than that of paper using the single CS system).     

Plasmon‐Induced Hot Carrier Separation across Dual Interface in Gold–Nickel Phosphide Heterojunction for Photocatalytic Water Splitting

Precise control of the topology of metal nanocrystals and appropriate modulation of the metal–semiconductor heterostructure is an important way to understand the relationship between structure and material properties for plasmon‐induced solar‐to‐chemical energy conversion. Here, a bottom‐up wet chemical approach to synthesize Au/Ni₂P heterostructures via Pt‐catalyzed quasi‐epitaxial overgrowth of Ni on Au nanorods (NR) is presented. The structural motif of the Ni₂P is controlled using the aspect ratio of the Au NR and the effective micelle concentration of the C₁₆TAB capping agent. Highly ordered Au/Pt/Ni₂P nanostructures are employed as the photoelectrocatalytic anode system for water splitting. Electrochemical and ultrafast absorption spectroscopy characterization indicates that the structural motif of the Ni₂P (controlled by the outer‐shell deposition of Ni) helps to manipulate hot electron transfer during surface plasmon decay. With optimized Ni₂P thickness, Pt‐tipped Au NR with an aspect ratio of 5.2 exhibits a geometric current density of 10 mA cm^?2 with an overpotential of 140 mV. The photoanode displays unprecedented long‐term stability with continuous chronoamperometric performance of 50 h at an input potential of 1.5 V with over 30 days. This work provides definitive guidance for designing plasmonic–catalytic nanomaterials for enhanced solar‐to‐chemical energy conversion.     

Emerging Dual‐Channel Transition‐Metal‐Oxide Quasiaerogels by Self‐Embedded Templating

The lack of precise control of particle sizes is the critical challenge in the assembly of 3D interconnected transition‐metal oxide (TMO) for newly‐emerging energy conversion devices. A self‐embedded templating strategy for preparing the TMO@carbon quasiaerogels (TMO@C‐QAs) is proposed. By mimicking an aerogel structure at a microscale, the TMO@C‐QA successfully assembles size‐controllable TMO nanoparticles into 3D interconnected structure with surface‐enriched carbon species. The morphological evolutions of intermediates verify that the self‐embedded Ostwald ripening templating approach is responsible for the dual‐channel TMO@C‐QA formation. The general self‐embedded templating strategy is easily extended to prepare various TMO@C‐QAs, including the Co₃O₄@C‐QA, Mn₃O₄@C‐QA, Fe₂O₃@C‐QA, and NiO@C‐QA. Benefiting from the unparalleled 3D interconnected network of aerogels, the Co₃O₄@C‐QA displays superior bifunctional catalytic activities for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER), as well as high specific capacity and excellent long‐term stability for lithium‐ion battery (LIB) anode. A proof‐of‐concept battery‐powered electrolyzer with Co₃O₄@C‐QA cathode and anode powered by a full LIB with Co₃O₄@C‐QA anode is presented. The battery‐powered electrolyzer made of the state‐of‐the‐art TMOs can exhibit great competitive advantages due to its supreme multifunctional energy conversion performance for future water electrolysis.     

基于液晶聚合物的双陷波可穿戴天线的设计

基于超薄液晶聚合物柔性材料,设计了一种满足无线体域网(WBAN)需求的双陷波UWB可穿戴天线。该天线由椭圆形贴片、锥形三叉戟共面馈线和梯形地板组成。通过分别在辐射贴片上蚀刻椭圆开口谐振环和在共面馈线上蚀刻n形槽以实现双陷波特性。该天线采用共面波导的馈电方式,具有良好的共面性,易于与载体共形。经网络矢量分析仪测试结果表明,该天线在3. 1~10. 6 GHz的超宽带频段内回波损耗小于-10 d B的同时,在4. 88~6. 15 GHz和7. 55~8. 51 GHz内拥有双陷波特性,可抑制WiMAX和ITU 8 GHz频段对系统产生的干扰。与以往的可穿戴天线相比,该天线厚度仅为0. 1 mm,且柔性可弯曲。此外,对天线在弯曲情况下进行测试,天线特性基本保持不变。     

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported,to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions.This novel structure offers low barrier height at the source and offers high ON-state current.The ION/IoFF of ISE-CGAA-SB-MOS-FET increases by 1177 times and offers steeper subthreshold slope (～60 mV/decade).However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate,dual metal gate,single metal gate with ISE,and dual metal gate with ISE has been presented.The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design.The numerical simulation is performed using the ATLAS-3D device simulator.     

光电双基区晶体管(PDUBAT)的器件模型

本文在考虑了晶体管的小注入效应和大注入效应以及基区宽变效应等因素后,首次用近似和简化的数学表示式和相应的等效电路,描述了光电双基区晶体管(PDUBAT)负阻形成的机理并使负阻区和谷值区的理论计算和实验结果一致性很好.     

IEEE 802.11g性能分析及应用

全面介绍IEEE802.11g标准的无线局域网,详细讲述IEEE802.11g草案标准的概念、产生背景、特点、构件及其体系结构和发展前景,探讨实现IEEE802.11gWLAN所需的关键技术及其双频多模应用方式,同时分析IEEE802.11g标准的网络性能。     

PWM型DC/DC开关变换器的自抗扰控制策略

文章介绍了自抗扰控制器的原理和结构。结合开关变换器脉动和非线性的特点，介绍了自抗扰控制器在DC—DC开关变换器中的应用；并对具体的Buck电路进行了建模、仿真和实验，结果验证了控制策略的优良性。