On the Realization of Current－Mode Continuous－Time Operational Transconductance Capacitance Filter

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开关电流技术：一种新的模拟抽样数据处理方法

开关电流（ＳＩ）技术是一种新的模拟抽样数据处理技术，介绍了开关电流电路的基本单元结构，讨论了目前开关电流技术中存在的问题及其解决方法。对开关电流技术与开关电容技术的一些基本特征进行了比较，ＳＩ技术不仅结构简单，而且与标准ＣＭＯＳ工艺兼容，可望替代开关电容电路。     

节理岩体的边界元模型及其应用

边界元法广泛应用于岩石力学问题的最大障碍是岩体的非均质及其包含的大量节理断层，本文采用多子域思想结合节理断层的非线性模型较好地解决了这一难题。该法在老厂锡矿的应用较好地解释了该矿采场顶板的冒落机理。     

Effect of processing history on the properties of Ag-based tapes

The Bi-system tapes and coils were prepared by the powder-in-tube method. The effect of processing and heat treatment on the properties of the tapes and coils was studied. It is found that the shearing stress produced by the rolling process may destroy the 2223 phase, and the destroyed 2223 phase cannot be recovered by heat treatment, whereas the pressing stress produced by the uniaxial pressing process only makes the 2223 phase grains break, and the broken 2223 phase can be closed by the heat treatment. TheJ _c values of the rolling samples, pressing sample, and the coil with a diameter of 35 mm are over 1.3×10⁴, 2.5×10⁴, and 4×10³ A/cm² (77 K, 0 T), respectively.     

高频脉冲微束等离子电弧温度场的测试及分析

本文首次采用单波长激光干涉技术，对恒定直流和高频脉冲电流微束等离子电弧温度场进行了测试，并做了分析比较。以电弧温度分布为基础分析了高频脉冲电流微束等离子电弧收缩、稳定的原因。     

液压随动系统在线监测与故障诊断系统

介绍了集随动系统在线监测与故障诊断于一体的智能系统。利用基于知识的诊断推理技术与神经网络技术相结合的方法构建了随动系统在线故障诊断专家系统，使得神经网络推理与基于符号的知识诊断控制、解释有机地结合起来，取长补短，大大提高了系统的工作效率和诊断可靠性。     

Test Generation for Crosstalk-Induced Faults: Framework and Computational Results

Due to technology scaling and increasing clock frequency, problems due to noise effects lead to an increase in design/debugging efforts and a decrease in circuit performance. This paper addresses the problem of efficiently and accurately generating two-vector tests for crosstalk induced effects, such as pulses, signal speedup and slowdown, in digital combinational circuits. These noise effects can propagate through a circuit and create a logic error in a latch or at a primary output. We have developed a mixed-signal test generator, called XGEN, that incorporates classical static values as well as dynamic signals such as transitions and pulses, and timing information such as signal arrival times, rise/fall times, and gate delay. In this paper we first discuss the general framework of the test generation algorithm followed by computational results. Comparison of results with SPICE simulations confirms the accuracy of this approach.     

Workload Distribution in Fault Simulation

Simulation at the gate level is computationally very expensive.Parallel processing is one technique to reduce simulation time.Possessing knowledge of the distribution of computational activity insimulation can aid in parallelizing it efficiently. We present a newcharacterization of the distribution of the computational workload infault simulation. An empirical analysis shows that the workloaddistribution is circuit specific, and is largely independent of thevector set being simulated. An inexpensive method to predict theworkload distribution is also discussed.     

High-field magnetic and transport critical current density of Sm-Ba-Cu-O: Agx superconductors at low temperature

Variation of magnetic critical current density (J _mc) and transport critical current density (J _tc) in high magnetic fields at liquid helium temperature were investigated on Sm-Ba-Cu-O: Ag _x (x=0.0, 0.2, 0.4, and 0.6) superconducting samples prepared by the coprecipitation technique.T _c and crystallographic parameters remain unaffected by Ag addition. However, bothJ _mc andJ _tc were found to increase on Ag addition. The volume pinning force (F _p) also increased with increase in Ag concentration, resulting in stronger flux line sheer. Microwave-induced d.c. voltage measurement shows a significant reduction of the total number of weak links between the superconducting grains with increasing concentration of Ag, which creates stronger pinning potentials between the boundary of the superconducting intergrains. Hence, the volume pinning force is greatly enhanced by Ag addition, leading to flux line lattice movement which is responsible for highJ _mc andJ _tc.     

本征吸除硅片特性研究

本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60％,以上优品率≥85％。