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941.
Reconfigurable Anisotropic Coatings via Magnetic Field‐Directed Assembly and Translocation of Locking Magnetic Chains 下载免费PDF全文
Alexander Tokarev Yu Gu Andrey Zakharchenko Oleksandr Trotsenko Igor Luzinov Konstantin G. Kornev Sergiy Minko 《Advanced functional materials》2014,24(30):4738-4745
A method for the generation of remotely reconfigurable anisotropic coatings is developed. To form these coatings, locking magnetic nanoparticles (LMNPs) made of a superparamagnetic core and a two‐component polymer shell are employed. Two different polymers form phase‐separated coaxial shells. The outer shell provides repulsive interactions between the LMNPs while the inner shell exerts attractive forces between the particles. Applying a non‐uniform magnetic field, one gathers the particles together, pushing them to come in contact when the internal shells could effectively hold the particles together. When the magnetic field is turned off, the particles remain locked due to these strong interactions between internal shells. The shells are thus made stimuli‐responsive, so this locking can be made reversible and the chains can be disintegrated on demand. In a non‐uniform magnetic field, the assembled chains translocate, bind to the solid substrate and form anisotropic coatings with a “locked” anisotropic structure. The coatings can be constructed, aligned, realigned, degraded, and generated again on demand by changing the magnetic field and particle environment. The mechanism of the coating formation is explained using experimental observations and a theoretical model. 相似文献
942.
Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs 下载免费PDF全文
Jun Fang Se‐Chul Park Leslie Schlag Thomas Stauden Jörg Pezoldt Heiko O. Jacobs 《Advanced functional materials》2014,24(24):3706-3714
The detection of single binding has been a recent trend in sensor research introducing various sensor designs where the active sensing elements are nanoscopic in size. Currently, transport and collection of airborne analytes for gas sensors is either diffusion based or non‐localized and it becomes increasingly unlikely for analytes to interact with sensing structures where the active area is shrunk, trading an increased sensitivity with a slow response time. This report introduces a corona discharge based analyte charging method and an electrodynamic nanolens based analyte concentration concept to effectively transport airborne analytes to sensing points to improve the response time of existing gas sensor designs. Localized collection of analytes over a wide range, including microscopic particles, nanoparticles, and small molecules, is demonstrated. In all cases, the collection rate is several orders of magnitudes higher than in the case where the collection is driven by diffusion. The collection scheme is integrated on an existing SERS (surface‐enhanced Raman spectroscopy) based sensor. In terms of response time, the process is able to detect analytes at 9 ppm (parts per million) within 1 s. As a comparison, 1 h is required to reach the same signal level when diffusion‐only‐transport is used. 相似文献
943.
Systematic Doping Control of CVD Graphene Transistors with Functionalized Aromatic Self‐Assembled Monolayers 下载免费PDF全文
Nathan Cernetic Sanfeng Wu Joshua A. Davies Benjamin W. Krueger Daniel O. Hutchins Xiaodong Xu Hong Ma Alex K.‐Y. Jen 《Advanced functional materials》2014,24(22):3464-3470
Recent reports have shown that self‐assembled monolayers (SAMs) can induce doping effects in graphene transistors. However, a lack of understanding persists surrounding the quantitative relationship between SAM molecular design and its effects on graphene. In order to facilitate the fabrication of next‐generation graphene‐based devices it is important to reliably and predictably control the properties of graphene without negatively impacting its intrinsic high performance. In this study, SAMs with varying dipole magnitudes/directions are utilized and these values are directly correlated to changes in performance seen in graphene transistors. It is found that, by knowing the z‐component of the SAM dipole, one can reliably predict the shift in graphene charge neutrality point after taking into account the influence of the metal electrodes (which also play a role in doping graphene). This relationship is verified through density functional theory and comprehensive device studies utilizing atomic force microscopy, X‐ray photoelectron spectroscopy, Raman spectroscopy, and electrical characterization of graphene transistors. It is shown that properties of graphene transistors can be predictably controlled with SAMs when considering the total doping environment. Additionally, it is found that methylthio‐terminated SAMs strongly interact with graphene allowing for a cleaner graphene transfer and enhanced charge mobility. 相似文献
944.
Mechanism of Crystallization and Implications for Charge Transport in Poly(3‐ethylhexylthiophene) Thin Films 下载免费PDF全文
Duc T. Duong Victor Ho Zhengrong Shang Sonya Mollinger Stefan C.B. Mannsfeld Javier Dacuña Michael F. Toney Rachel Segalman Alberto Salleo 《Advanced functional materials》2014,24(28):4515-4521
In this work, crystallization kinetics and aggregate growth of poly(3‐ethylhexylthiophene) (P3EHT) thin films are studied as a function of film thickness. X‐ray diffraction and optical absorption show that individual aggregates and crystallites grow anisotropically and mostly along only two packing directions: the alkyl stacking and the polymer chain backbone direction. Further, it is also determined that crystallization kinetics is limited by the reorganization of polymer chains and depends strongly on the film thickness and average molecular weight. Time‐dependent, field‐effect hole mobilities in thin films reveal a percolation threshold for both low and high molecular weight P3EHT. Structural analysis reveals that charge percolation requires bridged aggregates separated by a distance of ≈2–3 nm, which is on the order of the polymer persistence length. These results thus highlight the importance of tie molecules and inter‐aggregate distance in supporting charge percolation in semiconducting polymer thin films. The study as a whole also demonstrates that P3EHT is an ideal model system for polythiophenes and should prove to be useful for future investigations into crystallization kinetics. 相似文献
945.
本文基于场致发射电子对阳极表面材的料溅射能量分析,研究了引起正极性电火花加工时阳极材料的损耗机理,并给出了正极性加工时电极损耗率的理论极大值与极小值方程。设计并进行了不同工艺参数下紫铜电极和A3#钢电极单孔电火花加工对比实验,实验表明:相同工艺参数下,紫铜电极比A3#钢电极加工时的极间放电能量大,加工效率对比上前者是后者的极的75倍多,但电极材料的损耗率对比上,前者是后者的近10倍;不同工艺参数下,极间有效放电时间和放电能量越大,加工效率越高,相应的电极的损耗率也增加,但损耗率的增加程度要远小于加工效率的提高程度。 相似文献
946.
A new feature selection method is proposed for high-dimensional data clustering on the basis of data field. With the potential entropy to evaluate the importance of feature subsets, features are filtered by removing unimportant features or noises from the original datasets. Experiments show that the proposed method can sharply reduce the number of dimensions and effectively improve the clustering performance on WDBC dataset. 相似文献
947.
给出了天线方向图比较法和自由空间电压驻波比法两者的对照,这2种方法可用于评估无线电吸波暗室的反射电平。在分析这2种方法之后,指出了哪些参数会影响反射电平的测量值。通过实验结果的对照,揭示了为什么在采用这2种方法时会得到不尽一致和不相关联的结果,进而还表明当吸波暗室性能获得改进之后,如何利用反射电平来衡量这种改进。基于目前的研究成果,描述了吸波暗室性能的评估步骤。同时,还通过举例指出有必要开展进一步的研究,以便归纳出满意的评估步骤。 相似文献
948.
949.
A lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOST) with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions' lengths. 相似文献
950.
This paper proposes a novel technique for modeling the electrostatic discharge (ESD) characteristic of the enclosed-gate layout transistors (ELTs). The model consists of an ELT, a parasitic bipolar transistor, and a substrate resistor. The ELF is decomposed into edge and comer transistors by solving the electrostatic field problem through the conformal mapping method, and these transistors are separately modeled by BSIM (Berkeley Short- channel IGFET Model). Fast simulation speed and easy implementation is obtained as the model can be incorporated into standard SPICE simulation. The model parameters are extracted from the critical point of the snapback curve, and simulation results are presented and compared to experimental data for verification. 相似文献