Asymmetric Hydrogenation of Activated Ketones on Platinum: Relevant and Spectator Species

The heterogeneous enantioselective hydrogenation of activated ketones over chirally modified platinum is reviewed with emphasis on identifying the role of the various species observed in this catalytic system. The past years have witnessed a continuous broadening of the scope of this catalytic system including new reactants and modifiers affording over 97% ee. New reaction pathways have been uncovered and the kinetic and mechanistic studies have been faced with a number of complicating factors caused by spectator species and interactions in solution and on the Pt surface. The previously proposed mechanistic models are critically assessed in the light of these new findings.     

用于光城域网的新型RPR技术

介绍IEEE802.17正在进行标准化的弹性分组环(RPR,Resilient Packet Ring)协议,分析其帧结构及主要功能特色,并和SDH与以太网等现有城域网技术作简要对比;可以预见,随着标准化工作的进行,综合多种传输技术优势的RPR会成为创建下一代高速光城域网的首选技术。     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

基于单片机的空气干燥器控制仪

本文介绍了空气干燥器控制仪的基本组成和工作原理，并简要说明了软件设计方法。     

AD2S80在测角系统中的应用

DS2S80是美国AD公司生产的以鉴幅方式对感应同步器信号进行处理的专用芯片。由它与感应同步器构成的测角系统具有成本低、功耗小、所需外部元件少、可靠性好等优点。介绍了AD2S80数字转换芯片的引脚、组成测角系统的工作原理、外围电路的设计，给出了一种半量式测角系统的实现方案。     

2Mbit/s高速信令链路在移动通信七号信令网中的应用

通过对2Mbit/s高速信令链路原理、特点的介绍，阐明了该技术在现阶段使用的实际意义，并给出了2Mbit/s高速信令链路在移动通信七号信令网中的应用。     

Windows下的数据采集和A/D转换

主要论述了使用Visual C 6.0在Windows下实现数据的实时采集和信号的图形显示，其中包括数据采集、A／D转换以及信号的实时显示等。使用面向对象的编程方法，构造了一个通用的A／D转换类，具有很好的可重用性。     

碳/碳复合材料CVI工艺中热解碳形成机理的研究

对碳碳复合材料CVI或（CVD）工艺中热碳组织的类型，沉积机理等研究情况进行了简要的综述，并对其进一步研究提出了相应观点。     

BaFe12O19/SiO2-B2O3微晶玻璃陶瓷的制备和微波性能

采用柠檬酸sol-gel工艺合成了BaFe12O19/SiO2-B2O3微晶玻璃陶瓷，研究了SiO2-B2O3玻璃的含量，Ba/Fe原子比和热处理温度对体系析出晶相的影响，以及介电常数和磁异率在1MHz-6GHz频率范围的变化规律，结果表明，休系中SiO2-B2O3玻璃的含量和Ba/Fe比越高，BaF312O19相的析出越困难，前驱体合适的热处理温度为1000℃，介电常数和磁导率基本上随测试频率的增而加下降；介电损耗的最大值为0．43，磁损耗较小。     

基于充放电原理实现的微电容测量电路

具有抗分布电容以及简单实用等特性的充放电电路是目前微电容测量中广泛采用的一种测量电路。本文对基于充放电原理的微电容测量电路进行了深入研究，并介绍一种基于充放电原理的实用电路。