Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

气相处理对碳纤维表面及其复合材料性能的影响

本文对气相表面处理碳纤维的新工艺进行了系统研究。处理后的碳纤维强度、模量不下降,且其表面能、表面化学官能团含量明显增加;表面微晶结构变小,与环氧树脂复合后,层间剪切强度(LLSS)提高47%左右。本文还对复合材料断口的形态结构进行了分析,说明这种表面处理方法能有效改善碳纤维增强环氧树脂复合材料(CFRP)的界面粘结。     

统计复用信道的数字用户环路复用设备

将信道传输容量动态分配技术应用于数字用户环路复用设备中，可用效地解决复用设备线路复用率和话音传输质量之间的矛盾，从而使复用设备具有最佳的传输效果。本文介绍了一种性能优良的统计复用信道的数字用户环路复用设备。     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

单片机的显示接口电路设计

介绍了利用单片机的串、并行接口和专用显示接口 IC 设计显示接口电路的方法,并提供了4种动态和静态显示的硬件接口电路。     

On an invariance principle for unilateral contact at a bimaterial elastic interface

This paper examines the axisymmetric elastostatic problem related to the unilateral receding contact at a pre-compressed smooth bimaterial elastic interface. The separation at the interface is caused by the action of axisymmetric stress fields of unequal magnitude, which are applied at any location of the separate halfspace regions. The analysis of the problem focuses on the determination of the zone of separation as a function of the pre-compression, the magnitudes and locations of the axisymmetric stress fields inducing the separation, and the elasticity characteristics of the halfspace regions. It is found that the radius of the separation zone can be evaluated in explicit form. In the particular instance when the loadings applied at the surface of the halfspace regions are equal in magnitude and distribution, the analysis reveals that the radius of the separation zone is independent of the elasticity properties of the halfspace regions and can be evaluated in exact closed form.     

Uncertainty Matters: Computer Models at the Science–Policy Interface

The use of computer models offers a general and flexible framework that can help to deal with some of the complexities and difficulties associated with the development of water management plans as prescribed by the Water Framework Directive. However, despite the advantages modelling presents, the integration of information derived from models into policy is far away from being trivial or the norm. Part of the difficulties of this integration is rooted in the lack of confidence policy makers have on the incorporation of modelling information into policy formulation. In this paper we examine the reasons for this apparent lack of confidence and explore how some tools, presently in use, address this problem. We conclude that public confidence in models is highly dependent on the way uncertainties are addressed and suggest possible directions of action to improve the current situation. Four real case studies illustrate how computer models have been used in The Netherlands for carrying out management plans at regional and national scale. We suggest that the solution to integrate modelling information into policy formulation lies on both the modelling and the policy-making communities.     

Profibus-DP现场总线从站通信接口的开发

现场总线是一种先进的工业控制技术，其中通信接口是现场总线网络中尤其重要的一个环节。基于西门子公司的Profibus-DP开发包Development Kit4，从开发的角度讨论了如何设计软、硬件来实现Profibus-DP通信接口功能。     

Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides. While the field-effect mobilities were approximately 3–5 cm²/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm²/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample.