Room‐Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films

Cesium lead halide perovskites are of interest for light‐emitting diodes and lasers. So far, thin‐films of CsPbX₃ have typically afforded very low photoluminescence quantum yields (PL‐QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX₃ nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL‐QY of 68% and low‐threshold ASE at RT, are presented. As‐deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin‐film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX₃ perovskites can only be achieved with NPs.     

Patterned layers of a semiconducting polymer via imprinting and microwave-assisted grafting

Enhancements in both the rate and extent of grafting of poly(9,9'-n-dihexyl fluorene) (PDHF) onto flat and nanopatterned crosslinked photopolymer films are described. Reactivity of the surfaces toward grafting via the Yamamoto-type Ni(0)-mediated coupling reaction is increased by synthesizing and incorporating 2,7-dibromo-9-fluorenyl methacrylate (DBFM, 2) as a new grafting agent. Varying the concentration of surface-embedded DBFM is shown to control both overall graft formation and fluorescence with a maximum thickness of up to 30 nm and peak emission at 407 nm for 40 wt% loading. In addition, microwave irradiation is introduced as an effective means to drive graft formation and thus allows fabrication of PDHF-functionalized surfaces in as little as 30 min. Both forms of improvement are extended to DBFM-embedded, nanocontact-molded features ranging in size from 100 microm to 100 nm in width and 60 nm in height. Microwave-assisted grafting from these patterned surfaces produces fluorescent features as imaged by optical microscopy and a corresponding increase in feature height as measured by atomic force microscopy.     

Cu(Ⅱ)印迹交联壳聚糖吸附剂的制备与选择性吸附的研究

采用Cu(Ⅱ)离子为印迹离子,以壳聚糖为原料,甲醛为预交联剂,环氧氯丙烷为交联剂,通过微波法制备出改性壳聚糖吸附剂。考察了合成过程中操作条件对吸附剂吸附性能的影响。结果表明,当壳聚糖质量分数为6%、17.4 m L甲醛、8.76 m L环氧氯丙烷、酸化t为10 h、θ为70℃时,所得Cu(Ⅱ)印迹交联壳聚糖吸附剂对Cu(Ⅱ)的吸附容量高达3.466 mmol/g;在混合金属离子溶液中,该吸附剂对Cu(Ⅱ)表现出较强的吸附选择性。     

Gas‐Permeable Cellulose Template for Reduction of Template Damage and Gas Trapping in Microimprint Lithography of High Volume Manufacturing

A gas‐permeable cellulose template for microimprint lithography has been synthesized and characterized for the reduction of template damage and gas trapping caused by solvents and oxygen generated from cross‐linked materials. The 5 μm line‐pattern failure of the microimprinted UV cross‐linked liquid materials with 4.7 wt% acetone as a volatile solvent is solved by using the gas‐permeable cellulose template because of its increased oxygen permeability. The gas‐permeable cellulose template also allows the use of volatile solvents with high coating property and solubility into the microimprinted materials instead of the compounds and plastic resins conventionally used in mold injection.

     

Reliability of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I-V characteristics, capacitance retention, fatigue and imprint) were investigated. The I-V curve showed the conventional Schottky diode characteristics with a small current density of - 5.3×10 -10 A/cm2 at a voltage of - 4 V and 6.7×10-8 A/cm2 at a voltage of + 4V, and this characteristic can be maintained below 50℃. The capacitance variety of the ferroelectric diode was only 5 % in 10 hours after withdrawing the applied bias of + 5 V or - 5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was obse     

Fabrication of nano-scale phase change materials using nanoimprint lithography and reactive ion etching process

Phase change random access memory (PRAM) is one of the most promising non-volatile memories due to its ability to store digital data in the form of crystalline and amorphous phases of phase change materials. As a phase change material, Ge₂Sb₂Te₅ (GST225) is usually used, due to its reversible phase transition capability with speeds of less than 100 ns between the crystalline and amorphous phases. In order to fabricate highly integrated PRAM devices, sub micron- to nanometer-sized patterning of GST225 layer must be accomplished. In this study, 70 nm-sized polymer patterns were fabricated using partial filling nanoimprint lithography (NIL) on a GST225 layer, which was deposited by RF sputtering. Then GST225 was etched using Ar/Cl₂ plasma with an ICP etcher. Etch conditions, including Cl₂ concentration, were optimized to obtain the vertical etch profile of the GST patterns.     

纳米压印法制作亚波长结构PI减反射膜

为提高柔性基底太阳能电池光电转化效率,减少表面反射损失,用Tracepro光学仿真软件模拟设计亚波长结构减反射膜尺寸参数,仿真结果表明亚波长结构薄膜在纳米柱高度72 nm,占空比为0.5,光栅周期在300~440 nm处,光通量增强效果最佳.采用纳米压印技术,以多孔结构阳极氧化铝为模板,制作聚酰亚胺基底减反射膜.采用扫描电子显微镜和紫外-可见分光光度计研究了阳极氧化技术所制作的Al2O3模板及其纳米压印技术等工艺参数对PI薄膜透过率的影响.测试结果表明,在0.3 mol/L草酸溶液中,70 V恒压模式连续反应1 h条件下制备AAO模板,在280℃,800 kg压力条件下,热压印时间为10 min所得PI膜.在AM1.5大气质量条件下,UV-VIS透射光谱从440~1 000 nm区域,所制作的薄膜较原始PI膜的透过率提高2%~5%.     

一种基于神经网络判断的印鉴自动鉴别新方法

印鉴鉴别是一个比较困难的课题,在文章中,分析了防伪印鉴的特点,从图像纹理和分析的角度出发,提出了一种基于印鉴边缘纹理的印鉴鉴别方法.主要包括印鉴图像的预处理,印鉴图像纹理特征的提取与选择及特征参数的分析比较.在此基础上,运用神经网络的判别方法对所提取的印鉴特征进行判别,以鉴别印鉴的真伪,该方法的算法简单,并经实验验证表明,该方法是从一种新的角度进行了印鉴鉴别,提出了鉴别印鉴的新途径.     

Reactive Imprint Lithography: Combined Topographical Patterning and Chemical Surface Functionalization of Polystyrene‐block‐poly(tert‐butyl acrylate) Films

Here, reactive imprint lithography (RIL) is introduced as a new, one‐step lithographic tool for the fabrication of large‐area topographically patterned, chemically activated polymer platforms. Films of polystyrene‐block‐poly(tert‐butyl acrylate) (PS‐b‐PtBA) are imprinted with PDMS master stamps at temperatures above the corresponding glass transition and chemical deprotection temperatures to yield structured films with exposed carboxylic acid and anhydride groups. Faithful pattern transfer is confirmed by AFM analyses. Transmission‐mode FTIR spectra shows a conversion of over 95% of the tert‐butyl ester groups after RIL at 230 °C for 5 minutes and a significantly reduced conversion to anhydride compared to thermolysis of neat films with free surfaces in air or nitrogen. An enrichment of the surface layer in PS is detected by angle‐resolved X‐ray photoelectron spectroscopy (XPS). In order to demonstrate application potentials of the activated platforms, a 7 nm ± 1 nm thick NH₂‐terminated PEG layer (grafting density of 0.9 chains nm^?2) is covalently grafted to RIL‐activated substrates. This layer reduces the non‐specific adsorption (NSA) of bovine serum albumin by 95% to a residual mass coverage of 9.1 ± 2.9 ng cm^?2. As shown by these examples, RIL comprises an attractive complementary approach to produce bio‐reactive polymer surfaces with topographic patterns in a one‐step process.     

Development of large area nano imprint technology by step and repeat process and pattern stitching technique

In order to apply cost effective and productive nano imprint technology to the TFT-LCD fabrication, problems owing to large patterning area have to be solved. In this works, large area UV nano imprint process was developed by using of collimated UV light and shadow masks. It was shown that complex patterns could be easily replicated on 300 mm × 400 mm substrate by a large mold which is fabricated by suggested step and repeat process. Because roll pressing and alignment technique are important steps in our process for large area nano imprint, these process steps were optimized. Also, as a key technology for enlargement of patterning area, the stitching technique was developed. The idea using a collimated UV light is used for pattern stitching in nano imprint process. Developed large area pattern fabrication technique could be applied to various applications such as TFT-LCD process or optical film fabrication extensively.