基于DSP+CPLD的高精度信号发生器

介绍了基于直接数字式频率合成(DDS)原理的全数字信号发生器(DSP),利用DSP芯片快速、高精度的运算优势以及CPLD芯片灵活的编程逻辑、大容量存储功能的特点,采用通用可编程芯片以及数字波形合成技术,形成高稳定、高精度、高动态的数字合成信号.该信号发生器可产生0～25 kHz的正弦波、三角波和方波,输出电压峰峰值为0～5 V,频率步进1 Hz,幅度步进0.001 V.     

提高塑封双列直插式光耦合器绝缘耐压的设计和工艺要点

介绍了研制出其性能达国际先进公司同类产品水平的塑封双列直插式光耦合器的工作原理和提高绝缘耐压的技术难点，从引线框架设计、加工精度控制、内包封材料选型、理想内包封形状控制、塑封气密性的实现、环境条件的完善等方面讨论了提高绝缘耐压的设计和工艺要点。     

Life Calculations for Header – PGV-1000 Steam Generator Connector Weld Joints under NPP Service Conditions

The procedure for calculating the life of header – steam generator connector weld joints is proposed. It allows for running out the material plasticity reserve upon static cyclic elastoplastic loading as well as operating conditions, local stress concentrations, and residual stresses after welding.     

Influence of ion bombardment on the properties and microstructure of unbalanced magnetron deposited niobium coatings

The effect of the ion bombardment to unbalanced magnetron deposited, approximately 1.5 and 4.5 μm thick, Nb coatings have been investigated as the bias voltage was varied from U_B=−75 to −150 V. Increasing bias voltage increased the hardness of the coating from 4.5 to 8.0 GPa. This was associated with residual stress and Ar incorporation into the Nb lattice. Strong {110} texture developed in the samples deposited at low bias voltages, while beyond U_B=−100 V a {111} texture became dominant. However, strong {111} texture was observed only with the thicker 3Nb coatings. Secondary electron microscopy investigation of the coating topography showed fewer defects in the thicker coatings. All coatings exhibited good corrosion resistance, with the thicker coatings clearly outperforming the thinner ones. Excessive bias voltages (U_B=−150 V) was found to lead to poor adhesion and loss of corrosion resistance.     

An Algorithm For Selecting a Generator of Z_p

How to select a generator of Zp* is an important problem in cryptographic applications, where p is an odd prime. In this paper, we mainly consider the especial case that p is a safe prime, and give an algorithm for selecting a generator of Zp*,and find all generators of Zp* , where p is a safe prime. Our algorithm is more faster than the algorithm in [1]. Based on the proposed algorithm, one could find all generators of Zp* as well, where p is a perfect prime.     

HCMOS器件γ辐射损伤电路分析

本文对最基本的HCMOS器件(反相器和与非门)作了γ辐射损伤实验。通过器件性能变化,分析了γ辐射对电路的作用。     

Analysis of brushless three-phase synchronous generator without exciter

Recently, a demand for small-capacity generators has been increasing as electric sources in small ships and automobiles or as portable electric sources driven by engines. It is desired that the structure of small-capacity generators be simple and robust, and that the generators be highly reliable, easily maintained and controlled. This paper describes an analysis of the original brushless synchronous generator without exciter. The output voltage can be adjusted in the wide range by controlling the stator dc current. To analyze the characteristics of this generator, the finite element method is applied. It is found that the results of theoretical analysis agree well with the experimental results.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

整体式预热器U型管蒸汽发生器数学模型及动态模拟

本文针对整体式预热器Ｕ型管蒸汽发生器建立了热工数学模型并进行了动态模拟。该模型是一个２５阶、非线性、可移动边界模型。包括：一、二次侧的质量与能量平衡方程以及确定二次侧下降段流量的动量守恒方程。对所建立的模型利用Ｇｅａｒ方法作了蒸汽阀门开度阶跃１０％的瞬态模拟，所得结果和国外所公布的结果吻合得很好。由此可见。本文所建立的模型可以为这种蒸汽发生器的设计、运行、控制提供理论依据。     

中子产额大于1.5×10^10n／s的密封中子管

报道了一种中子产额大于１．５×１０１０ｎ／ｓ、靶和离子源都可拆卸的密封中子管，以它为核心研制的密封中子发生器已被用于中子照像等领域，并取得了较好的结果。