Retention of gallium ions from acidic solutions by pyridine strong‐base anion exchangers

Using the batch method, the retention of Ga(III) from HCl solutions by two gel‐type pyridine strong‐base anion exchangers containing 1‐methyl‐ or 1‐butyl‐4‐vinylpyridinium chloride structural units, called S₁ and S₂ resins, respectively, was studied. The influence of the HCl and Ga(III) concentrations as well as of the contact time between the resin and the liquid phase was investigated. The parameters, which characterize the retention process, were estimated using Langmuir and Freundlich isotherms. Both resins exhibited a higher affinity for gallium ions from a 6M HCl solution. According to Langmuir isotherms, maximum retention capacities of 44.44 and 60 mg Ga(III)/g dry resin for the S₁ and S₂ resins, respectively, were obtained. Freundlich isotherms provide additional proof for a higher affinity of the S₂ resin for Ga(III) from HCl solutions. It is clear that the substituent length increase on N⁺ atoms led to an increasing affinity of the pyridine strong base anion exchangers toward Ga(III). © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 3440–3444, 2002     

离子注入半导体的快速热退火与SOI技术

自1977年以来,为了摸索离子注入半导体的新退火方法,各国学者进行了大量的研究工作。这种努力是从激光退火的研究开始的。激光与半导体材料相互作用的研究,已派生出若干很有生命力的应用项目,其中,快速热退火、SOI(Semiconductor on Insulator)技术等已显示了重要的应用前景,并正在走向实用化。     

用于重离子核反应实验测量的纵向电场气体电离室

本文报道了一种新型的大动态范围，多叠层探测器系统组件之一的纵向电场气体电离室的构造，性能和在中能得离子核反应实验中的应用。     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

半导体集成电路在锂离子电池保护电路中的应用

本文首先扼要介绍锂离子电池保护电路的功能，然后分别介绍过充电保护，过放电保护，过电流保护，最后列举几种保护性半导体IC的性能及应用电路的结构。     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

硼酸使掺铁铝酸锂发光增强的现象

在硼酸存在下合成了掺铁铝酸锂荧光体,研究了在不同温度下硼酸加入量对荧光体发光强度的影响,并通过X射线粉末衍射和粒度分析,初步探讨了发光增加的原因。     

Preparation of an anion‐exchange adsorbent by the radiation‐induced grafting of vinylbenzyltrimethylammonium chloride onto cotton cellulose and its application for protein adsorption

Poly(vinylbenzyltrimethylammonium chloride)‐graft‐cotton cellulose, an anion‐exchange matrix, was synthesized by a mutual radiation‐induced grafting technique with a ⁶⁰Co γ‐radiation source. The grafted matrix was characterized by grafting yield estimation, elemental analysis, Fourier transform infrared spectroscopy, and scanning electron microscopy. The grafting yield decreased with the increase in the dose rate. However, the grafting yield and nitrogen content of grafted samples increased almost linearly with an increase in the total irradiation dose. To evaluate the performance of the grafted anion‐exchange matrix, the protein adsorption and elution behavior were investigated in a continuous column process under various experimental conditions, with bovine serum albumin used as a model protein. The binding and elution behavior of the anion‐exchange matrix depended on different experimental parameters, such as the grafting yield, ionic strength, pH of the medium, and amount of protein loaded. From a breakthrough curve, the equilibrium binding capacity and elution percentage of the grafted anion‐exchange matrix were estimated to be 40 mg/g and 94%, respectively. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 102: 5512–5521, 2006     

Studies on the corrosion behavior of cerium-implanted zircaloy-4 with GAXRD

In order to study the influence of cerium ion implantation on the aqueous corrosion behavior of zircaloy-4, specimens were implanted by cerium ions with a fluence range from 1×10¹⁶ to 1×10¹⁷ ions/cm² at maximum 150°C, using MEVVA source at an extracted voltage of 40 kV. The valence and elements penetration distribution of the surface layer were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES) respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the cerium ion implantation in the oxide films. Three-sweep potentiodynamic polarization measurement was employed to value the aqueous corrosion resistance of zircaloy-4 in a 1 N H₂SO₄ solution. It was found that a significant improvement in the aqueous corrosion behavior of zircaloy-4 implanted with cerium ions compared with that of the as-received zircaloy-4. The improvement effect will declined with raising the implantation fluence. The bigger is the fluence, the less is the improvement. Finally, the mechanism of the corrosion behavior of the cerium-implanted zircaloy-4 is discussed.     

Co^3＋—modified Surface of LiMn2O4 Spinel for its Improvementof Electrochemical Properties

Cobalt was used to modify the surface of spinel LiMn2O4 by a solution technique to produce Co^3 -modified surface material (COMSM). Cobalt was only doped into the surface of LiMn2O4 spinel. XPS(X-ray photoelectron spectroscopy) analysis confirms the valence state of Co^3 . COMSM has stable spinel structure and can prevent active materials from the corrosion of electrolyte. The ICP(inductively coupled plasma) determination of the spinel dissolution in electrolyte showed the content of Mn dissolved from COMSM was smaller than that from the pure spinel. AC impedance patterns show that the charge-transfer resistance (Rct) for COMSM is smaller than that for pure spinel. The particles of COMSM are bigger in size than those of pure spinel according to the micrographs of SEM(scanning electron microscopy). The determinations of the electrochemical characterization show that COMSM has both good cycling performance and high initial capacity of 124.1 mA/h at an average capacity loss of 0.19 mAh/g per cycle.