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991.
面阵列封装器件在电子产品中的使用率逐年上升,如何实现其高速贴装是影响生产线效率的重要因素。从不同的角度论述了面阵列封装器件实现高速贴装的手段与技术。 相似文献
992.
1 IntroductionWiththerapiddevelopmentofInternetandmobilecommunications,theresearchonwirelessmobilenetworkshasbecomethenewhotspotinin formationtechnologyfield .Asweknow ,mobileterminals (mobilephone,forexample)arethetooltohelppeopletoaccessanyinformationtheyneedbyanymediaatanytimeandanywhere .However,itissometimesdifficultformobileterminalstoplaysucharolebecauseofthelimitationssuchaslimitedca pacity ,lowpower,andinconvenienceinoperating .So,peoplehopetofindanotherwaytoaccessnet workinformatio… 相似文献
993.
Stanislav I. StoliarovPhillip R. Westmoreland Marc R. Nyden Glenn P. Forney 《Polymer》2003,44(3):883-894
The theory and implementation of reactive molecular dynamics (RMD) are presented. The capabilities of RMD and its potential use as a tool for investigating the mechanisms of thermal transformations in materials are demonstrated by presenting results from simulations of the thermal degradation of poly(methyl methacrylate) (PMMA). While it is known that depolymerization must be the major decomposition channel for PMMA, there are unanswered questions about the nature of the initiation reaction and the relative reactivities of the tertiary and primary radicals formed in the degradation process. The results of our RMD simulations, performed directly in the condensed phase, are consistent with available experimental information. They also provide new insights into the mechanism of the thermally induced conversion of this polymer into its constituent monomers. 相似文献
994.
Novel diols containing imide groups were prepared via condensation of aromatic dianhydrides with 5‐amino‐1‐naphthol. The diimide–dinaphthols prepared were characterized by conventional methods and used to synthesize new poly(urethane–imide)s (PUIs). All the polymers were characterized and their physical properties, such as solubility, solution viscosity, thermal stability, and thermal behaviour were studied. The polymers obtained showed more thermal stability than typical polyurethanes because of the presence of the imide groups. Copyright © 2003 Society of Chemical Industry 相似文献
995.
A new interaction integral formulation is developed for evaluating the elastic T-stress for mixed-mode crack problems with
arbitrarily oriented straight or curved cracks in orthotropic nonhomogeneous materials. The development includes both the
Lekhnitskii and Stroh formalisms. The former is physical and relatively simple, and the latter is mathematically elegant.
The gradation of orthotropic material properties is integrated into the element stiffness matrix using a “generalized isoparametric
formulation” and (special) graded elements. The specific types of material gradation considered include exponential and hyperbolic-tangent
functions, but micromechanics models can also be considered within the scope of the present formulation. This paper investigates
several fracture problems to validate the proposed method and also provides numerical solutions, which can be used as benchmark
results (e.g. investigation of fracture specimens). The accuracy of results is verified by comparison with analytical solutions. 相似文献
996.
997.
Seong Hyuk Lee Junghee Lee Kwan-Gu Kang Joon Sik Lee 《Journal of Mechanical Science and Technology》2006,20(8):1292-1301
This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated
by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser
pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin
film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established
for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results,
it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and
nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this
lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates
increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated.
For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser
irradiation. 相似文献
998.
999.
At the shipyards, the aluminium alloy 5083 is welded with a multi-pass sequence using the metal inert gas technique. If, while checking the weld integrity either after welding or during service, defects are detected in the vicinity of the weldment, repairs are usually employed to extend the service life.
The repair method involves removal of the upper passes, depending on the thickness and re-welding under the same conditions.
Purpose of this paper is to examine the microstructural changes accompanying repair welding, define their effect on properties of primary importance and set, if possible, an upper limit as far as the number of repairs is concerned. 相似文献
1000.