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991.
面阵列封装器件在电子产品中的使用率逐年上升,如何实现其高速贴装是影响生产线效率的重要因素。从不同的角度论述了面阵列封装器件实现高速贴装的手段与技术。  相似文献   
992.
1 IntroductionWiththerapiddevelopmentofInternetandmobilecommunications,theresearchonwirelessmobilenetworkshasbecomethenewhotspotinin formationtechnologyfield .Asweknow ,mobileterminals (mobilephone,forexample)arethetooltohelppeopletoaccessanyinformationtheyneedbyanymediaatanytimeandanywhere .However,itissometimesdifficultformobileterminalstoplaysucharolebecauseofthelimitationssuchaslimitedca pacity ,lowpower,andinconvenienceinoperating .So,peoplehopetofindanotherwaytoaccessnet workinformatio…  相似文献   
993.
The theory and implementation of reactive molecular dynamics (RMD) are presented. The capabilities of RMD and its potential use as a tool for investigating the mechanisms of thermal transformations in materials are demonstrated by presenting results from simulations of the thermal degradation of poly(methyl methacrylate) (PMMA). While it is known that depolymerization must be the major decomposition channel for PMMA, there are unanswered questions about the nature of the initiation reaction and the relative reactivities of the tertiary and primary radicals formed in the degradation process. The results of our RMD simulations, performed directly in the condensed phase, are consistent with available experimental information. They also provide new insights into the mechanism of the thermally induced conversion of this polymer into its constituent monomers.  相似文献   
994.
Novel diols containing imide groups were prepared via condensation of aromatic dianhydrides with 5‐amino‐1‐naphthol. The diimide–dinaphthols prepared were characterized by conventional methods and used to synthesize new poly(urethane–imide)s (PUIs). All the polymers were characterized and their physical properties, such as solubility, solution viscosity, thermal stability, and thermal behaviour were studied. The polymers obtained showed more thermal stability than typical polyurethanes because of the presence of the imide groups. Copyright © 2003 Society of Chemical Industry  相似文献   
995.
A new interaction integral formulation is developed for evaluating the elastic T-stress for mixed-mode crack problems with arbitrarily oriented straight or curved cracks in orthotropic nonhomogeneous materials. The development includes both the Lekhnitskii and Stroh formalisms. The former is physical and relatively simple, and the latter is mathematically elegant. The gradation of orthotropic material properties is integrated into the element stiffness matrix using a “generalized isoparametric formulation” and (special) graded elements. The specific types of material gradation considered include exponential and hyperbolic-tangent functions, but micromechanics models can also be considered within the scope of the present formulation. This paper investigates several fracture problems to validate the proposed method and also provides numerical solutions, which can be used as benchmark results (e.g. investigation of fracture specimens). The accuracy of results is verified by comparison with analytical solutions.  相似文献   
996.
本文采用一种新型的等离子体浸没式离子注入 离子束增强沉积的技术(PIII IBAD),在Cr12MoV钢基体上制备出了TiN膜,对沉积膜的组织进行了光电子能谱分析,并对沉积膜进行了硬度检测、摩擦试验及磨痕形貌分析。试验结果表明,沉积膜中的组织为TiN、TiO2和Ti2O3,TiN膜具有高达Hv3200的高硬度和极其优良的摩擦性能。  相似文献   
997.
This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.  相似文献   
998.
999.
At the shipyards, the aluminium alloy 5083 is welded with a multi-pass sequence using the metal inert gas technique. If, while checking the weld integrity either after welding or during service, defects are detected in the vicinity of the weldment, repairs are usually employed to extend the service life.

The repair method involves removal of the upper passes, depending on the thickness and re-welding under the same conditions.

Purpose of this paper is to examine the microstructural changes accompanying repair welding, define their effect on properties of primary importance and set, if possible, an upper limit as far as the number of repairs is concerned.  相似文献   

1000.
两平移两转动四自由度减振平台设计、仿真与测试   总被引:2,自引:0,他引:2  
应用两平移两转动四自由度并联机构为组合弹性阻尼减振装鬣主体结构,在机构原动件处辅以弹性阻尼装置,运用反向自适应原理,模拟橡胶,实现多自由度减振。按照给定减振要求,对减振平台进行理论设计和分析,用AD-AMS软件建立系统模型和仿真,并制作样机试验。由动态模拟及试验结果一致,从而说明该减振平台设计的正确性和可行性。  相似文献   
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