Structure and defects evolution at temperature and activation treatments of the TiCr2 intermetallic compound of Laves phase C36-type

In this work, microstructure and defect evolution at a temperature and activation treatment of the TiCr₂ intermetallic compound of Laves phase C36-type synthesized in the abnormal glow discharge plasma were investigated. The crystalline structure of the C36TiCr₂ powder crushed by hydrogenation-dehydrogenation (HD) method is characterized by the following lattice parameters: a = 4.932 Å and c = 16.059 Å. The dilatation of the crystal lattice under the hydrogenation at the HD crushing process leads to the formation of partial dislocations. For the first time ever the experimental value of the positron lifetime of the synthesized compound of the C36TiCr₂ Laves phase, this amounted to (141 ± 2) ps, established by the positron spectroscopy. The optimal activation parameters of the HD-crushing C36TiCr₂ powder were established: the temperature should be in the range from 450 to 500 °C, the exposure time in a hydrogen atmosphere at a pressure of (1–8) atm. must be at least 10 min.     

Non‐minimum phase switched systems: HOSM‐based fault detection and fault identification via Volterra integral equation

In this paper, the problem of continuous and discrete state estimation for a class of linear switched systems with additive faults is studied. The class of systems under study can contain non‐minimum phase zeroes in some of their ‘operating modes’. The conditions for exact reconstruction of the discrete state are given using structural properties of the switched system. The state space is decomposed into the strongly observable part, the non‐strongly observable part, and the unobservable part, to analyze the effect of the unknown inputs. State observers based on high‐order sliding mode to exactly estimate the strongly observable part and Luenberger‐like observers to estimate the remaining parts are proposed. For the case when the exact estimation of the state cannot be achieved, the ultimate bounds on the estimation errors are provided. The proposed strategy includes a high‐order sliding‐mode‐based fault detection and a fault identification scheme via the solution of a Volterra integral equation. The feasibility of the proposed method is illustrated by simulations. Copyright © 2013 John Wiley & Sons, Ltd.     

Phase equilibria calculation of LaI3-MI （M=Na, K, Cs） binary systems

The Gibbs energies of liquid phases in the LaI3-MI (M=Na, K, Cs) systems were described by the modified quasi-chemical model. From the measured phase equilibrium data of these binary systems, a set of thermodynamic functions were optimized by using the CAL-PHAD technique. The enthalpy of mixing and the interaction parameter of the liquid phase were predicted from known data for the LaI3-MI systems.     

The thermodynamics of the liquid phase migration in nanodispersed composite bodies

The thermodynamics of the liquid phase migration in a nanodispersed composite body has been studied. An expression describing the variation of the Gibbs potential in the course of the above process has been derived. The notion “the migration pressure” has been introduced. The equation for the migration pressure has been derived, which includes size of nanoparticles, interphase and surface tensions and the variation of the area of contact and interphase surfaces in the course of migration.     

Spatial mapping of electronic states in κ-(BEDT-TTF)2X using infrared reflectivity

We review our recent work on spatial inhomogeneity of the electronic states in the strongly correlated molecular conductors κ-(BEDT-TTF)₂X. Spatial mapping of infrared spectra (SMIS) is used for imaging the distribution of the local electronic states. In molecular materials, the infrared response of the specific molecular vibration mode with a strong electron–molecular vibration coupling can reflect the electronic states via the change in the vibration frequency. By spatially mapping the frequency shift of the molecular vibration mode, an electronic phase separation has been visualized near the first-order Mott transition in the bandwidth-controlled organic conductor κ-(BEDT-TTF)₂Cu[N(CN)₂]Br. In addition to reviewing SMIS of the phase separation, we briefly mention the electronic and optical properties of κ-(BEDT-TTF)₂X.     

相位波带片型时间透镜研究

基于Opti-System软件,对相位波带片型时间透镜进行了深入研究。明确了中心波长对相位波带片型时间透镜焦距色散补偿量的影响机理,建立了中心波长、色散补偿量与输出光脉冲消光比及脉冲宽度间的关系。研究结果表明,相位波带片型时间透镜的焦距色散补偿量,在1 310~1 550 nm波长范围与光信号中心波长呈近似线性关系。通过线性拟合,得出焦距色散补偿量与中心波长的线性关系公式。对于不同波长的输入光波,可通过公式确定最佳焦距色散补偿量,实现最窄脉宽和最优消光比的光脉冲输出。研究结果可为优化相位波带片型时间透镜设计提供理论指导,进而拓宽相位波带片型时间透镜的应用范围。     

Electronic structures and phase transition characters of β-, P61-, P62-and δ-Si3N4 under extreme conditions: a density functional theory study

This paper describes the results of structural, electronic and elastic properties of silicon nitride(in its high-pressure P61 and P62 phases) through the first-principles calculation combined with an ultra-soft pseudopotential. The computed equilibrium lattice constants agree well with the experimental data and the theoretical results. The strongest chemical bond(N–Si bond) shows a covalent nature with a little weaker ionic character. P61-Si3N4 is more stable than P62-Si3N4 due mainly to the fact that the shorter N–Si bond in the P61 phase allows stronger electron hybridizations. We have also predicted the phase stability of Si3N4 using the quasi-harmonic approximation, in which the lattice vibration and phonon effect are both considered. The results show that the β→P61 phase transition is very likely to occur at 42.9 GPa and 300 K. The reason why the β→P61→δ phase transitions had never been observed is also discussed.     

一种Ka波段低相噪GaAs HBT压控振荡器

本文研究了一种采用GaAs HBT工艺实现的工作在Ka波段的压控振荡器。该振荡器采用共射级组态和对称式电容电感谐振腔结构以降低其相位噪声,采用π型反馈网络补偿180°相移。在片测试结果表明：偏离中心频率1 MHz处相位噪声为-96.47dBc/Hz,调谐范围为28.312到28.695GHz,在-6V电源电压下该振荡器直流功耗为18mA,振荡器芯片面积为0.7mm×0.7mm。     

Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

The crystallization kinetics of Sn₄₀Se₆₀ thin films has been successfully investigated using sheet resistance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass substrates. The crystallization temperature for Sn₄₀Se₆₀ thin film was found to be 156.6 ± 0.3 ℃. In the as-deposited state, the sheet resistance was found to be 195 MΩ, this value declined to 1560 Ω/口 upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ± 0.07 eV. From the results obtained, Sn₄₀Se₆₀ is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.     

一种改进的早迟积分型位定时同步方法

数字通信系统中,位定时同步是实现正常数字通信的必要条件.位定时同步方法有很多,其中早迟积分型位定时方法是应用最广泛的位定时方法之一.本文基于传统的早迟积分型位定时方法,通过改进早迟积分环的鉴相器,提出了一种改进的早迟积分型位定时方法.经Matlab仿真表明,在相同的环路滤波参数下,改进的早迟积分型位定时方法的环路收敛速度最优可以提高2倍.