改进的水声信道载波恢复盲均衡算法

为提高修正的常数模算法(MCMA)的收敛速度,进一步降低算法的剩余均方误差,提出了3种改进的盲均衡算法,既保留了MCMA算法载波恢复的功能,又不同程度地提高了MCMA算法的收敛速度。最后通过水声信道仿真,对这些算法的性能进行了验证和比较。     

Polarity Analysis of Self-Seeded Aluminum Nitride Crystals Grown by Sublimation

Self-seeded aluminum nitride (AlN) crystals were successfully grown in a tungsten crucible by the sublimation method. The polarities along the growth direction of these AlN samples were characterized by chemical etching, combined with high-resolution transmission electronic microscopy (HRTEM) and Raman spectroscopy. It has been proven by our experimental results that etching in KOH solution and in molten KOH-NaOH can be a reliable method to determine the surfaces with different polarities. Chemically active N-polar (0001) AlN surfaces were removed appreciably, while only etch pits related to threading dislocations were observed on Al-polar surfaces after chemical etching. HRTEM images revealed that there are noticeable inversion domain boundaries in the samples. Raman spectrum measurements showed the vibration mode change before and after etching in the same geometrical arrangement.     

Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity

The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich growth conditions, respectively. Short and low density GaN nanowires were then grown on each AlN polarity type. PFM measurements verified the expected AlN layer polarity and further indicated that predominantly N-polar nanowires are produced for growth on both AlN polarity types. Cross-section scanning transmission electron microscopy (STEM) images further reveal that the nanowires on Al-polar AlN films are nucleated on regions in the AlN layer that contain inversion domains, which propagate into the GaN nanowire nuclei. PFM measurements were found to be a convenient technique for mapping the polarity of a statistically significant number of individual GaN nanowires.     

变极性方波电源的换向与控制

首先分析了变极性方波电源二次逆变换向过程的特点 ,即开关器件切换的电压低 ,电流大 ,回路电感引起的续流过程在换向中起着重要的作用 ,它能提供适宜的反向驱动时间 ,或者促进再引弧电压形成。指出了反向驱动延迟时间td 并不等于电弧电流间断时间tD(即熄弧时间 )的实际情况。归纳出td>0、td<0两种换向控制方法 ,深入分析了两种控制方式下的换向过程机理 ,得出了相应的换向控制策略 ,并给出了实现方法及试验结果。最后指出了两种控制方法的不同特点及适用范围。从而深化了方波电源的换向理论 ,为改善这种电源的工作性能和可靠性 ,为其合理的设计 ,提供了进一步的依据。     

Feature integration across space, time, and orientation.

The perception of a visual target can be strongly influenced by flanking stimuli. In static displays, performance on the target improves when the distance to the flanking elements increases—presumably because feature pooling and integration vanishes with distance. Here, we studied feature integration with dynamic stimuli. We show that features of single elements presented within a continuous motion stream are integrated largely independent of spatial distance (and orientation). Hence, space-based models of feature integration cannot be extended to dynamic stimuli. We suggest that feature integration is guided by perceptual grouping operations that maintain the identity of perceptual objects over space and time. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

超快变换高频变极性方波TIG电弧行为

基于一种新型电路变换拓扑实现频率达超音频段且具有超快速电流上升沿和下降沿变化速率的高频变极性方波电流输出,将其用于铝合金TIG焊接过程,研究分析高频变极性TIG电弧行为.结果表明,变极性电流频率和变化速率具有对电弧形态、稳定性及电弧力的控制能力,提高电流极性变换频率,电弧清除氧化膜的能力增强,电弧表现出明显的收缩效应,电弧电压和电弧等效电阻增大,但电弧偏吹作用加剧.在一定频率范围内,增加变极性电流频率,减小负极性电流幅值及其持续时间,可增大焊缝熔透率,有利于提高焊接效率和质量.     

某1000 MW汽轮机组励磁系统实测建模过程浅析

该机组是上海汽轮发电机有限公司生产的1000 MW汽轮机组,励磁调节器是ABB公司生产的UNITROL-6800型数字励磁调节器。文章论述了该机组励磁系统参数测试结果,给出了电力系统稳定计算用励磁系统的模型和参数。     

Comparative Study on Reactive Extraction of Nicotinic Acid with Amberlite LA‐2 and D2EHPA

Abstract

The comparative study of reactive extraction of nicotinic acid with Amberlite LA‐2 and D2EHPA in three solvents with different polarity indicated that the extractant type and solvent polarity control the extraction mechanism. Thus, the reactive extraction with Amberlite LA‐2 in low‐polar solvents occurs by means of the interfacial formation of an aminic adduct with 3 or 2 extractant molecules. If solvents with higher polarity are used, each reactant participates with one molecule to the interfacial reaction. The mechanism of reactive extraction with D2EHPA involves in all cases the formation of a salt as the product of the interfacial reaction between one molecule of each reactant.     

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

ABSTRACT: Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 nm in diameter of the IrOx nano-dots (NDs) have been observed by high-resolution transmission electron microscopy. The IrOx-NDs, Al2O3, and WOx layers are confirmed by X-ray photo-electron spectroscopy. Capacitance-voltage hysteresis characteristics show higher charge-trapping density in the IrOx-ND memory as compared to the pure Al2O3 devices. This suggests that the IrOx-ND device has more defect sites than that of the pure Al2O3 devices. Stable resistive switching characteristics under positive formation polarity on the IrOx electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al2O3/IrOx top electrode interface. The switching mechanism is explained schematically based on our resistive switching parameters. The resistive switching random access memory (ReRAM) devices under positive formation polarity have an applicable resistance ratio of > 10 after extrapolation of 10 years data retention at 85°C and a long read endurance of 105 cycles. A large memory size of > 60 Tbit/sq in. can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future.     

电极极性影响EHD强化沸腾传热的机理

The effects of electrode polarities on EHD enhancement boiling heat transfer were investigated theoretically and experimentally based on the analysis of electric field distribution affected by superheat boundary layer and charge injection. The results showed that electric field distribution was changed by the charge induced by temperature gradients in the superheat boundary layer, but the change was independent of electrode polarities. However, when electric charge injection occurred, the electrode applied positive high voltage might generate different characteristics of charge injection from that generated by applied negative high voltage. If the electric field on the surface of heat transfer increased due to charge injection, the augmentation effects would increase. The experiments demonstrated that positive high voltage gave larger enhancement factors than negative high voltage. The experimental phenomena could be interpreted well on the basis of charge injection characteristics.