合成绝缘子在临汾地区输电线路上的应用

通过临汾地区输电线路合成绝缘子的使用数量、发生故障的情况，分析了合成绝缘子挂网运行16a的概况以及反映出的问题，指出了合成绝缘子应深入开展的研究工作以及应用前景。     

GIS母线中金属异物运动的探讨

介绍GIS母线内部存在金属异物时的影响，对金属异物在不同情况下的运动规律进行了探讨和研究。     

多回路输电线路上使用合成绝缘子有关问题的探讨

文章阐述了合成绝缘子耐雷性能的两面性;分析了在多雷区多回路输电线路上,杆塔比较高时,线路绝缘往往受大气过电压控制,由于合成绝缘子雷电冲击耐压水平较低,因此其使用受到限制,建议对有关规定提出修订。     

Unconventional pairing in doped band insulators on a honeycomb lattice: the role of the disconnected Fermi surface and a possible application to superconducting β-MNCl (M=Hf,Zr)

Abstract

We investigate the possibility of realizing unconventional superconductivity in doped band insulators on the square and honeycomb lattices. The latter lattice is found to be a good candidate due to the disconnectivity of the Fermi surface. We propose applying the theory to the superconductivity in doped layered nitride β-MNCl (M= Hf, Zr). Finally, we compare two groups of superconductors with disconnected Fermi surface, β-MNCl and the iron pnictides, which have high critical temperature T_c, despite some faults against superconductivity are present.     

元青花《昭君出塞》罐艺术特征与主题思想研究

"昭君出塞"故事源于汉代,绵延流传,元青花《昭君出塞》罐表现的即为"昭君出塞"故事题材。元青花《昭君出塞》罐具有鲜明的艺术特征,同时,亦具有丰富而深邃的主题思想内涵。     

论清康熙官窑瓷“仿明风”形成的条件与原因

清康熙中期时,御窑厂得到正式复兴。仿明是康熙官窑最鲜明的特色之一,从颜色釉至各类彩绘瓷均有显著的"仿明风"。康熙官窑"仿明风"是在各方面有利条件下形成的,其形成与当时政治与文化风气密切关联。     

Crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors

In this paper, we report on the fabrication of a crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors (TFTs). We used cyanoethylated pullulan (CEP) as a crosslinkable high-k polymer matrix and poly(ethylene-alt-maleic anhydride) (PEMA) as a polymeric crosslinking agent. Because PEMA has a high number of functional groups reactive to the hydroxyl groups of CEP, the use of PEMA is effective for minimizing the amount of remaining hydroxyl groups strongly related to the large current hysteresis and high off current of the organic TFTs. To investigate the potential of the CEP-PEMA mixture as a gate insulator, we fabricated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C₈-BTBT) TFTs. The C₈-BTBT TFT with the 60 nm-thick CEP-PEMA gate insulator showed excellent TFT performance with a field-effect mobility of 1.4 cm²/V s and an on/off ratio of 2.4 × 10⁶.     

Assessing the width of Gaussian density of states in organic semiconductors

The Density of States (DOS) is an ingredient of critical importance for the accurate physical understanding of the optoelectronic properties of organic semiconductors. The disordered nature of this class of materials, though, renders the task of determining the DOS far from trivial. Its extraction from experimental measurements is often performed by driving the semiconductor out of thermal equilibrium and therefore requires making assumptions on the charge transport properties of the material under examination. This entanglement of DOS and charge transport models is unfavorable since transport mechanisms in organic semiconductors are themselves still subject of debate. To avoid this, we propose an alternative approach which is based on populating and probing the DOS by means of capacitive coupling in Metal Insulator Semiconductors (MIS) structures while keeping the semiconductor in thermal equilibrium. Assuming a Gaussian shape, we extract the DOS width by numerical fitting of experimental Capacitance–Voltage curves, exploiting the fact that the DOS width affects the spatial distribution of accumulated charge carriers which in turn concurs to define the MIS capacitance. The proposed approach is successfully tested on two benchmark semiconducting polymers, one of n-type and one of p-type and it is validated by verifying the robustness of the extraction procedure with respect to varying the insulator electrical permittivity. Finally, as an example of the usefulness and effectiveness of our approach, we study the static characteristics of thin film transistors based on the aforementioned polymers in the framework of the Extended Gaussian Disorder transport model. Thanks to the extracted DOS widths, the functional dependence of current on the gate voltage is nicely predicted and physical insight on transistor operation is achieved.     

氧化铝1000℃时的质量损失测定

提出用廉价的瓷坩埚代替铂坩埚,利用重量法,测定了氧化铝在1000℃下的质量损失,为了提高分析精密度,样品在分析前进行了预处理,分析步骤严格按照GB/T6609进行。本方法能应用于载氟氧化铝中1000℃质量损失的测定,测得载氟氧化铝中灼碱提高2%左右。     

抗辐照标准单元库验证方法研究

对抗辐照单元库的验证方法进行研究。以0.5μm抗辐照单元库为例,研究抗辐射单元库的验证方法。设计了一款验证电路,对单元库进行验证,单元库功能和性能满足设计要求,抗辐射能力达到500 krad(Si)。