电瓷凝胶注模成型的研究

以丙烯酰胺为单体,硝酸铈铵为引发剂,N,N,N',N'-四甲基乙二胺为催化剂、N,N'-亚甲基双丙烯酰胺为交联剂,研究了电瓷坯体的凝胶注模成型工艺,并探讨了不同工艺条件对料浆原位凝固成型的影响规律以及成型的电瓷坯体的烧成性能和显微结构。     

艺术瓷的现代装饰形式

在艺术瓷的创作中，借鉴外国现代装饰艺术的表现形式，在陶瓷器皿上进行设计，突破了传统陶瓷的装饰形式，形成别具一格的艺术特色．     

国际知名陶瓷产区面临的机遇与挑战

通过分析参加国际知名陶瓷产区市长(景德镇)峰会主要城市的历史和现状,从文化交流、重新构造和人才交流等三个方面探讨其面临的机遇与挑战。     

盘(盆)式绝缘子的设计方法探讨

随着电力系统的迅速发展,对SF6电器开关设备的绝缘件的技术水平要求越来越高,尤其对 GIS中绝缘子的开发设计,已成为该产品绝缘性能和质量可靠的主要指标。现以126 kV三相共箱式 GIS中所用的盘式绝缘子(环氧树脂浇注)为例介绍绝缘件结构设计的思路和方法。     

Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts

The switching dynamics of silicon-on-insulator (SOI) high power vertical double diffused MOS (VDMOS) transistors with an inductive load has been investigated by device simulation. Unlike other conventional VDMOS devices, this device has drain contacts at the top surface. In general the switching behaviour of a power device during the unclamped inductive switching (UIS) test will determine the reliability of the power device as the energy stored in the inductor during the on state is dumped directly into the device when it is turned off. In this paper we compare the switching dynamics of the SOI VDMOS transistor with standard bulk silicon VDMOS device by doing numerical simulations. It is shown here, using 2D-device simulations that the power dissipated in the SOI VDMOS device during the UIS test is smaller by approximately a factor of 2 than in the standard bulk silicon VDMOSFET. The lower dissipation is due to the presence of the silicon film/buried oxide/substrate structure (this structure forms a SOI capacitor). In the case of the SOI VDMOS transistor the energy released from the inductor during the UIS test is stored to some extent in the SOI capacitor and partly dumped directly into the device. As a result the maximum current through the SOI device is separated in time from the maximum voltage across the device, unlike in the bulk case, thereby reducing the maximum power.     

简论中国古代民间陶瓷

论述了中国古代民间陶瓷发展的历史和分布情况，指出民间陶瓷具有以下主要特点：(1)凸显实用功能；(2)具有浓厚的地域色彩；(3)装饰上的规范化和程式化；(4)富有生活情趣。     

Influence of a Finite Tc on Enhanced Superconductivity Near the Metal/Insulator Transition

We adapted the BCS equation for T _c so that it applies to disordered conductors near the metal/insulator transition (MIT). The resulting expression for T _c as a function of the conductivity accounted quite well for several disparate classes of superconducting materials near the MIT [disordered metals, oxide conductors (including high-T _c superconductors), semiconducting materials, organic conductors, and C₆₀]. This function, however, was applicable only to situations for which T _c was zero in the pure limit—which was the case for the data chosen. This paper extends the model to the nonzero case and compares the predictions to the appropriate data.     

透辉石在研制瓷质砖中的应用研究

本文借助XRD、SEM等分析手段 ,从试样的白度、吸水率、收缩率及维氏硬度的变化情况探讨了透辉石的掺加对瓷质砖瓷化性能的影响。研究表明 ,适宜的透辉石掺量 (1 0 % )有利于提高瓷质砖的瓷化程度 ,降低烧结温度     

多层介质膜MIM薄膜二极管的I-V特性研究

制备了一种用于有源矩阵液晶显示的具有对称结构、较好 I-V特性对称性和较高电流通断比的 MIM薄膜二极管。采用了基于反应溅射的多层膜工艺制备其 Ta2 O5绝缘层。采用原子力显微镜 (AFM)对 Ta2 O5膜进行了表面分析 ,并对 MIM薄膜二极管的 I-V特性进行了测试。AFM分析结果表明 ,电子束蒸发 /反应溅射 /电子束蒸发法工艺制备的绝缘膜表面平整 ,膜层较致密 ;I-V特性测试结果显示 ,MIM-TFD的电流通断比约为 1 0 5,I-V特性曲线的非线性系数为 1 0 ,左右阈值电压分别为 6.3 V和 5 .8V,具有良好的对称性。该 MIM薄膜二极管的性能可以满足有源矩阵液晶显示的要求     

500 kV进口合成绝缘子断裂原因分析

分析了德国西门子公司和美国可靠公司生产的500kV合成绝缘子断裂原因，通过试验和论证对两公司的该类产品进行了分析总结，提出了反事故措施并给出了建议。