“以赛促能”实践教学模式的分析研究

提出了将学科竞赛融入“以赛促能”的实践教学模式,对该模式的特点进行了分析总结.该模式具有综合性、协作性、过程性、独立性、创新性和竞争性等特点,能够提高学生综合运用多种知识的能力、团队协作能力、实践动手能力、独立学习能力、创新思维能力,提高学生的心理素质,对提高教师水平、促进教学改革、形成优良学风也有积极作用.     

基于“卓越计划”的运输管理学教学改革研究

运输管理学是物流工程专业核心课程之一。今依据对物流企业的调研结果,从课程定位、教材选择、课堂内容及课堂教学方法等方面进行课程教学改革研究,提出教学内容的模块化、工作项目化及驱动任务设计等环节,构建多种手段并用的课程教学体系。结果表明,教学改革充分发挥了学生的积极性和创造力,为培养出高质量的物流工程技术人才打下了基础。     

基于LJC-B型高压输电线路的污秽绝缘子泄漏电流遥测系统研究

污秽绝缘子的闪落是造成电力运行故障的一个原因．研制了一种遥测系统装置,对污秽绝缘子的泄漏电流进行实时监测,根据泄漏电流的大小,发出同级别的报警,提示电力人员做出反应．经过实例试验,表明该方法是有效的．     

Effect of polycarboxylate-type superplasticizer on the paste fluidity based on the water film thickness of flocs

The excess water film theory and the properties of flocs are integrated to examine the effect of the polycarboxylate-type superplasticizer on the paste fluidity.The theory states that excess water can surround the flocs rather than the particles and that the cell consists of a floc and a superficial water film.Experiments on limestone powder pastes were conducted to verify the theory.The superplasticizer dosage(sp%)and the water–powder ratio by volume(Vw/Vp)were systematically varied.A sedimentation balance method was used to measure the size distribution of the flocs in the limestone powder pastes.The water film thickness(WFT)of flocs was then calculated and shown to determine the paste fluidity.Based on this WFT of flocs,the effect of the sp on the paste fluidity was determined and then compared with the effect of water.     

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

This paper describes the Si-doping of GaAs that was grown using the AsCl₃:H₂:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl₃:SiCl₄ liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O¹⁶ to 2×10¹⁹ cm^?3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl₃:SiCl₄ doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n⁺ structures with order of magnitude changes occurring within 500 Å. For the 1×10₁₆ to 8×l0¹⁸ cm^?3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.     

深埋型无水芒硝矿床溶采工艺研究

采用本研究成果──钻井两管油垫注热水工艺，能够成功地开采出理深达2200m的无水芒硝矿，较好地解决芒硝卤水采运过程中的结晶堵管及顶板垮塌等技术难题，充分有效地开采地下芒硝资源，并取得较好的经济效益。     

束状小口径钢管内壁粉末涂料涂装工艺研究

论述了束状小口径钢管内壁用粉末涂料的涂装工艺，解决了热交换器传热管的防腐结垢问题。着重介绍了束状小口径钢管内壁粉末涂料的涂装工艺研究过程及热交换器传热管的施工工艺，并对该项工艺的经济效益作了分析。     

Leakage tests for Am solid sources used for liquid xenon detector monitoring

Experimental tests are described to check solid ²⁴¹Am radioactive sources used to monitor operation of liquid xenon detectors. In particular, radioactive leakage was tested in extreme temperature conditions following immersion in liquid nitrogen for different time periods. No radioactivity loss was detected from the sources considered. The paper describes the source characteristics, test methods and results obtained.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.