智能化中高压变频器实载试验平台的实现

中、高压变频器产量越来越多，但试验手段大多比较落后，一般采用带电机空转的方法。本文介绍了一个高压变频器试验平台，通过该平台可以对电压等级在3kV～10kV、功率在5000kW以下的变频器进行实载试验。     

数字电路中电源电压瞬间下降的成因及改进

通过分析数字集成芯片多输出中电源电压瞬间下降的原因,对常规驱动电路结构进行改进。改进后单输出电路的峰值电流降为原来的2/3,再通过优化版图的电源布线,能有效防止电源电压下降,使芯片正常稳定地工作。     

超级电容在手机电源中的应用

超级电容又称法拉电容,是指其容量为法拉级的电容。文章介绍了应用超级电容作为手机电池的总体思路并重点介绍了其充电电路、升压电路和控制电路的设计。该电池具有充电快、寿命长、免维护并且环保等特点。     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

Determining the Instantaneous Effective Energy of x-Ray Tube Bremsstrahlung

A method is described for determining the instantaneous effective energy of x-ray tube brehmsstrahlung by means of two semiconductor detectors employing epitaxial GaAs structures and a measurement circuit, which together determine the effective energy with an error of 5% in the range 20–80 keV in the presence of nonlinearity in the detector response.     

时频域自动识别与压制高频噪声

本文在分析张宇等及钱忠平等提出的高频噪声判别准则基础上,利用夏洪瑞等根据在窄档等频距小波分频之后识别、压制高频噪声的思路,提出在时频域将代表地震道主要能量的几个频带的平均振幅绝对值作为正常子波的平均振幅绝对值,以此来识别和压制高频噪声的异常振幅。实际处理结果表明,此法不仅可以压制高频谐振及高频突发噪声,而且可以保护弱地震反射信号不受损害。     

自对准双扩散MOS器件的阈值电压分析

文章提出了精确描述自对准双扩散MOS器件阀值电压的解析模型，给出了其沟道中杂质的二维分布和源结耗尽层宽度的计算方法；分析了边缘效应对氧化层电容的影响，借助电荷共事模型，建立了反映非均匀沟道中耗尽层电荷变化及其对开启电压影响的阀值电压模型；同时，借助二维仿真器，计算出自对准双扩散MOS器件的阈值电压，其值与解析值相吻合。     

电力电子的绿色变换技术与绿色电源的发展

电力电子技术应用日益广泛,同时也带来严重的谐波污染和电磁干扰。本文介绍了电力电子在电磁兼容和谐波抑制方面的绿色变换技术。同时还就绿色电源产业的形成和绿色电源产品要求作了简要说明。     

宽工作电压范围单电源CMOS误差放大器

采用0.8μm标准数字CMOS工艺(VTN0=0.836V,VTP0=0.930V),设计并流片验证了具有宽工作电压范围(3～6V),可作SOC系统动态电源管理芯片内部误差放大器应用的单电源CMOS运算放大器。该误差放大器芯核同时具有适合低电压工作,并对工艺参数变化不敏感的优点。对于相同的负载情况,在3V的工作电压下,开环电压增益AD=83.1dB,单位增益带宽GB=2.4MHz,相位裕量Φ=85.2°,电源抑制比PSRR=154.0dB,转换速率Sr=2.2V/μs;在6V工作电压下,AD=85.1dB,GB=2.4MHz,Φ=85.4°,PSRR=145.3dB,Sr=3.4V/μs。     

Chemische Zusammensetzung und Mikrostruktur polymerabgeleiteter Gläser und Keramiken im System Si–C–O. Teil 2: Charakterisierung der Gefügeausbildung mittels hochauflösender Durchstrahlungselektronenmikroskopie und Feinbereichsbeugung

Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO₂, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al₂O₃ or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO₂ was observed.