珠江河口区水环境整体数学模型研究

根据珠江河口区的特点，建立了珠江河口区水流，泥沙及含氟度的整体联解数学模型，探讨了联解的计算模式；利用珠江三角洲和河口区水流泥沙、含氟度连续条件，把珠江三角洲网河区一维水沙、含氟度输移数学模型和河口区二维水沙、含氟度输移数学模型进行联解。同时采用最新的地形资料并选用洪、中、枯水及大、中、小潮等多种水文组合条件对该模型进行分区验证和整体验证，模型验证成果满足精度要求。     

Magnetic Properties of Fe-Doped Rutile

Ball-milling method was applied to dissolve Fe into titanium dioxide (TiO₂). X-ray diffraction indicated the starting anatase changed to a rutile-type structure with oxygen deficiency after ball milling. Transmission electron microscopy and X-ray absorption experiments were conducted to examine the possible existence of magnetic impurities in the ball-milled powders after they were leached in HCl solutions. Temperature dependence of the resistivity shows semiconducting behavior and the magnetic hysteresis loops at 5 and 300 K exhibit ferromagnetic characteristics. Fe-doped TiO₂ films were also prepared by pulsed laser deposition. The magnetic properties of the films are discussed.     

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

Passivated single damascene copper SiO₂ damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown and time-dependent dielectric breakdown properties were investigated on a wafer level basis for temperatures ranging between room temperature and 150 °C. It is found that the leakage performance of the wafers with a TiSiN barrier is better at room temperature, but at 150 °C the performance levels out with Ta(N)/Ta. Time-dependent dielectric breakdown measurements at 150 °C show that the lifetime of the interconnect is higher with the selected Ta(N)/Ta barrier than for TiSiN.     

PECVD法低温沉积多晶硅薄膜的研究

在玻璃衬底上采用常规的PKCVD法在低温(≤400℃)条件下制得大颗较(直径＞100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后，沉积速率提高了近10倍。分析认为，在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m n≤3)，而不可能是SiHn(n≤3)基团。     

流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

Quantifying and characterizing contemporary riparian sedimentation

Fluvial processes of erosion, sediment transport and deposition determine the changing form and sedimentary structure of naturally adjusting riparian zones. Riparian sediment storage has both scientific and management importance in relation to: (i) the quantities of sediment that are involved; (ii) the quality of the sediment; and (iii) the dispersal of biological materials, notably the vegetation propagules that are transported and deposited in association with the sediment. After discussing the significance of riparian sedimentation processes, this paper reviews methods for quantifying contemporary sediment deposition within water bodies and their margins. Methods for investigating contemporary riparian sedimentation are given particular emphasis, and the extent to which different methods provide comparable estimates and have been used to support the analysis of different physical and chemical properties of the sediment are outlined. The importance of the following are stressed: (i) selecting a sampling method that is suited to the sedimentation environment; (ii) incorporating careful cross‐calibration if measurements from different methods are to be combined; and (iii) replicating measurements to give more robust estimates if small traps are employed. It is concluded that artificial turf mats provide a useful design of sediment trap across a range of environmental conditions because: (i) their surface roughness reduces problems of sediment removal by flood waters or rainfall; (ii) their pliability permits installation on irregular surfaces; (iii) they can be securely attached to the ground with metal pins to resist high shear stresses from river flows; (iv) they are robust and light and so easily manipulated in the field and laboratory; (v) it is possible to fully recover the deposited sediment to accurately determine the amount of sediment deposited and to support a range of other analyses. Results are presented to illustrate how artificial turf mats can be used to estimate the quantity and quality of deposited sediment and to explore the associated deposition of viable seeds. This provides one example of the important hydroecological role of riparian sedimentation processes and of the potential for the development of innovative, interdisciplinary research on riparian sediment dynamics. Copyright © 2003 John Wiley & Sons, Ltd.     

伶仃洋三维潮流输沙的数值模拟

作者使用垂向坐标变换技术，结合有限差分方法建立了三维潮流输沙的数学模型。为了增加模型的稳定性和减少数值耗散，对悬沙对流扩散方程中的水平对流项采用三阶迎风格式离散。应用本模型对伶仃洋的枯季和洪季的潮流输沙的悬沙场进行了数值模拟，将模拟结果与实测资料进行比较，二者吻合较好。模拟结果分析表明：伶仃洋悬沙运动主要集中在西滩，对伶仃航道影响不大；洪季水体含沙浓度高于枯季；水体含沙浓度沿水深存在浓度梯度，且洪季的浓度梯度明显大于枯季。     

Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Ultra thin (5 nm) silicon oxynitride (SiON) films were fabricated at a low temperature using nitrogen plasma generated by an inductively coupled plasma system. Effects of post-metalization annealing (PMA) of Al/SiON/Si MOS structure on the electrical properties of the SiON films were studied and correlations between the charge trapping states and the leakage current were established. Positive charge trapping by interface states generated by plasma damage was characterized by the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. Hysteresis was observed to be completely removed by PMA while interface state density at the Si mid band gap reduced from 2.2×10¹³ to 3.7×10¹¹/eV/cm² and the oxide fixed charge density changed from 3.3×10¹² to −4×10¹¹/cm². The leakage current also decreased significantly, by more than two orders of magnitude, with PMA. The analysis of the leakage current using trap assisted tunneling (TAT) mechanism indicated that with PMA, the trap energy level in the SiON film becomes shallower from 1.3 to 0.7 eV. The positive trapped charges were observed to be annihilated by PMA and the trapping sites became neutral trap centers in the SiON film. This could lead to the reduction in the leakage current component given rise to by TAT.     

Investigation into polishing process of CVD diamond films

A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed.