Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Modeling and Analysis of a Long Thin Conducting Stripline

A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature.     

煤炭码头带式输送机控制系统

介绍煤炭码头带式输送机联锁控制系统设计的一种方法，详细阐述了整个系统的工艺流程、启动方式以及控制原理等。这种方法可以实现带式输送机远程中控室控制，也可进行就地带式输送机机侧控制。     

Operation of superconducting fault current limiter using vacuum interrupter driven by electromagnetic repulsion force for commutating switch

Using conventional high‐temperature superconducting wire, a model superconducting fault current limiter (SFCL) is made and tested. Solenoid coil using Bi2223 silver sheath wire is so made that inductance is as small as possible and a vacuum interrupter is connected in series to it. A conventional reactor coil is connected in parallel. When the fault current flows in this equipment, superconducting wire is quenched and current is transferred into the parallel coil because of voltage drop of superconducting wire. This large current in parallel coil actuates magnetic repulsion mechanism of vacuum interrupter. Due to opening of vacuum interrupter, the current in superconducting wire is broken. By using this equipment, current flow time in superconducting wire can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of parallel coil. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(1): 52–61, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20315     

天津独流减河工程监控系统现地通信单元设计

提出一种配电网电容电流测量的新方法，在零序电压互感器的开口三角侧串联一个可调电感，通过注入一个变频恒流信号寻找配电网的谐振频率，改变可调电感的数值后寻找另一谐振频率，联立2个谐振方程求解电容电流，该方法消除了电压互感器漏抗对测量的影响。开发了配电网电容电流测量仪，经模拟试验和现场测试表明，该方法具有安全、快捷、准确等特点，适用于中性点不接地或经随调式消弧线圈接地配电网。     

Electrochemical mass transfer between an impinging jet and a rotating disk in a confined system

This paper presents the mass transfer results from an impinging liquid jet to a rotating disk. The mass transfer coefficients were measured using the electrochemical limiting diffusion current technique (ELDCT). Rotational Reynolds number (Re_r) in the range of 3.4 × 10⁴–1.2 × 10⁵, jet Reynolds number (Re_j) 1.7 × 10⁴–5.3 × 10⁴ and non-dimensional jet-to-disk spacing (H/d) 2–8 were taken into consideration as parameters. It was found that the jet impingement resulted in a substantial enhancement in the mass transfer compared to the case of the rotating disk without jet.     

光纤复合架空地线雷击断股的分析及试验

介绍了光纤复合架空地线(0PGW)雷击断股的特征，讨论了其原因和机理，并进行了0PGW的雷电冲击电波试验，分析了造成断股的影响因素，提出了防止雷击造成0PGW断股的措施。     

From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n ?/ p Ion Implantation Technology

This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μm) focal plane arrays using n-on-p planar ion-implanted technology. To explore and analyze the feasibility of such VLWIR detectors, a set of four Cd _x Hg_1−x Te LPE layers with an 18 μ cutoff at 50 K has been processed at Defir (LETI/LIR–Sofradir joint laboratory), using both our “standard” n-on-p process and our improved low dark current process. Several 320 × 256 arrays, 30-μm pitch, have been hybridized on standard Sofradir readout circuits and tested. Small dimension test arrays characterization is also presented. Measured photonic currents with a 20°C black body suggest an internal quantum efficiency above 50%. Typical I(V) curves and thermal evolution of the saturation current are discussed, showing that standard photodiodes remain diffusion limited at low biases for temperatures down to 30 K. Moreover, the dark current gain brought by the improved process is clearly visible for temperatures higher than 40 K. Noise measurements are also discussed showing that a very large majority of detectors appeared background limited under usual illumination and biases. In our opinion, such results demonstrate the feasibility of high-performance complex focal plane arrays in the VLWIR range at medium term.     

250W带功率因数校正整流电源模块的研制

功率因数校正技术越来越成为电源行业研究的热点。文中介绍了适用于雷达等设备的250W带功率因数校正整流电源模块的设计，分析了其中升压电感器设计、主开关管保护、控制电路消振、散热设计和表面贴装等关键技术，完成了实验研究，获得了满意的试验结果。     

Ability of a contactless inductive device for the characterization of the critical current versus temperature in superconducting rings at temperatures close to TC

Critical current measurements for three polycrystalline rings of YBCO, three Bi-2223, and one YBCO + Ag were developed from a temperature close to 80 K to the critical temperature using a previously reported contactless inductive device based on the transformer method. These data were used to analyze the ability of this device to characterize, in superconducting rings, the Ginzburg-Landau, Ambegaokar-Baratoff, and De Gennes regimes as well as the crossover temperature between them.