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81.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
82.
Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 108 times higher than that of a nongradient SiC ceramic. 相似文献
83.
D. E. Wetzler P. F. Aramendía M. L. Japas R. Fernández-Prini 《International Journal of Thermophysics》1998,19(1):27-42
Thermal diffusivities of supercritical CO2 and C2H6 were determined over a wide density range with a photothermal technique. The thermal lens, formed by the degradation of the absorbed light energy as heat by the sample, allows the employment of a nonequilibrium method in the critical region. Controlling the refractive-index gradient, i.e., a density gradient, perturbations can be maintained at levels where convection is negligible. An easy-to-operate setup allowed us to measure thermal diffusivities in the density ranges 5 to 20 mol·dm–3 for CO2 at 308 and 313 K and 2 to 12 mol·dm–3 for C2H6 at 308 K with a standard precision of 15%. 相似文献
84.
Thermal stratification in a mantled hot water storage tank is analysed numerically for different water inlet velocities. The aim is to obtain higher thermal stratification and supply hot water for usage as long as possible. Twelve different water inlet velocities to the hot water storage tank are considered. The numerical method is validated by comparing its results against experimental and numerical results from the literature. It turned out that the results obtained from the numerical analysis have shown very good agreements with the results from previous works. As a result, the water temperature in the tank increases with the increase of the water inlet velocities to the mantle but this increment is not proportional. After a period of operation of 7.2 h, which corresponds to the average sunshine duration in Turkey, temperature increments of 6.5 and 35 K have been estimated for the hot water inlet velocities of 0.01 and 0.3 m s?1, respectively, at a radial distance of 0.1 m and a height of 1 m inside the storage tank. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
85.
Rui Morimoto Chisato Yokomori Akiko Kikkawa Akira Izumi Hideki Matsumura 《Thin solid films》2003,430(1-2):230-235
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献
86.
高压供电设备故障特别是输电线路的高压接地故障对工地的影响是相当大的。由于接地故障为隐性故障,没有明显的物理现象,且若是长期接地可能会发展成较为严重的两相或三相短路故障,使系统解列运行直至崩溃;由于工地流动人员较多,还易造成电击事故。利用高压一相接地时在线路中产生零序电压这一特性来迅速判断和切除接地的用电设备,可以保证各项施工的顺利进行。 相似文献
87.
88.
双头螺栓失效分析 总被引:4,自引:3,他引:1
金蔚静 《理化检验(物理分册)》2003,39(5):268-270
与汽车电机装配在一起的双头螺栓在拧紧后不久便发生断裂。采用扫描电镜、化学分析、金相检验等方法对失效件进行了检测,同时又进行了氢脆试验验证。结果表明,螺栓在进行表面酸洗及电镀时,氢向金属内部扩散和富集,当氢浓度达到一定临界值后,促使氢致裂纹的产生和扩展。在外应力的作用下,即出现氢脆现象导致螺栓断裂。 相似文献
89.
J. C. Jones H. Rahmati T. D. H. Do 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1992,54(4):317-318
Wood shaving samples were heated in both cubic baskets and in a previously described system realising the conditions of the ‘infinite slab’ in thermal ignition. Results from the two sets of experiment were found to be totally consistent with each other. 相似文献
90.
本文基于弹塑性分叉理论研究单向纤维增强复合材料的压缩破坏模式和压缩强度对缺陷的敏感性问题。对于常见复合材料,所得结论是:无缺陷或者小缺陷情况的破坏模式为倾斜破坏带;大缺陷情况的破坏模式为水平破坏带;形成水平破坏带的压力值小于形成倾斜破坏带的压力。 相似文献