Parameter design using the Taguchi methodology

This article aims to give an overview of the Taguchi methodology and more specific of its key step: parameter design. The purpose of parameter design is to bring quality into the product/process by determining the relevant parameters and their optimal settings such that the quality characteristics of the product are optimised and have minimal sensitivity to “noise” (i.e., those disturbing factors which are difficult or too expensive to control). The (mainly statistical) tools used in the methodology will be handled and some actual Bell cases will be mentioned as practical examples.     

一种容灾中间件的设计与实现

在分析大规模分布式应用的特点以及建立容灾系统存在问题的基础上,提出了一种使用中间件进行容灾的思想,并设计和实现了一种容灾中间件,该中间件有效地实现了容灾的透明化;另外,将失效检测部件加入到容灾中间件中,并对原有的失效检测算法进行改进,实验证明改进的算法能够提高检测的准确率。该容灾中间件在实际应用中取得了良好的效果。     

容灾系统中存储方案选择的研究

论文首先阐述了在容灾系统中存储方案的重要性,讨论了存储方案需要考虑的衡量指标,然后介绍了主要的存储方式,根据衡量指标划分了存储方式的特性范围,最后着重研究了容灾系统中存储方案的选择流程,并使用一个实例说明容灾系统中存储方案的选择流程。     

电流源激励下的模拟电路端口电压测试方法

文章研究了电流源激励下，二端口网络的输入端电压和输出端电压随网络中元件参数变化时相互之间的关系，并在此基础上提出了一种模拟电路故障诊断新方法。该方法不仅能够同时诊断元件的硬故障和参数偏移故障，而且能够同时运用于直流测试和交流测试。     

The New Fault Tolerant Onboard Computer for Microsatellite Missions

1IntroductionWith the space technology developing,much moreCommercial-Off-The-Shelf(COTS)devices are used inmicrosatellites that are mostlylocatedin Low Earth Or-bit(LEO)[1~3].The COTS devices have relatively lowpower consumption,high processing performan…     

强跟踪自适应滤波器实现机动目标的精确跟踪

机动目标状态估计中的一个主要问题是:目标运动的突变性导致状态噪声无法进行统计预测.传统的EKF将噪声看成是高斯白噪声有着本质上的不足,因而无法实现稳定的跟踪.引入Sage-Husa滤波算法对有色噪声进行在线的估计,一定程度上弥补了目标运动模型不够合理的缺憾.在此基础上,从系统容错设计基本原理出发,用归一化残差功率法实时地检测可能出现的数值发散现象,一旦检测到发散,印通过一种改进的强跟踪自适应滤波器进行抑制,有效地提升了滤波的健硕性,实现了稳定跟踪.最后,针对高机动目标的运动特性,仿真验证采用变维滤波模型,用EKF对目标的简单机动进行跟踪,只有目标运动突变时才采用本文提出的算法,以提升计算的实时性.仿真结果表明此算法对高机动目标的跟踪是有效的.     

光通信系统中色散容限的分析

文章通过非线性薛定谔方程和主偏振态(PSP)模型.对单模光纤中色散引起的脉冲展宽进行了研究.通过详细计算,对光通信系统中的色度色散和偏振模色散(PMD)做出了合理的估计,并分析了色散容限对系统传输的影响.这些分析对实际系统设计具有一定参考意义.     

一种基于VME总线双余度容错处理系统的设计与实现

VME总线是具有高可靠性的并行总线,在机载嵌入式系统领域受到广泛应用。文章首先对VME总线结构进行了分析,然后描述了用双机数据处理系统的组成与工作原理,最后重点说明了双机数据处理系统VME总线接口逻辑与系统容错设计方法。     

Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects

In the search for nontoxic alternatives to lead‐halide perovskites, bismuth oxyiodide (BiOI) has emerged as a promising contender. BiOI is air‐stable for over three months, demonstrates promising early‐stage photovoltaic performance and, importantly, is predicted from calculations to tolerate vacancy and antisite defects. Here, whether BiOI tolerates point defects is experimentally investigated. BiOI thin films are annealed at a low temperature of 100 °C under vacuum (25 Pa absolute pressure). There is a relative reduction in the surface atomic fraction of iodine by over 40%, reduction in the surface bismuth fraction by over 5%, and an increase in the surface oxygen fraction by over 45%. Unexpectedly, the Bi 4f_7/2 core level position, Fermi level position, and valence band density of states of BiOI are not significantly changed. Further, the charge‐carrier lifetime, photoluminescence intensity, and the performance of the vacuum‐annealed BiOI films in solar cells remain unchanged. The results show BiOI to be electronically and optoelectronically robust to percent‐level changes in surface composition. However, from photoinduced current transient spectroscopy measurements, it is found that the as‐grown BiOI films have deep traps located ≈0.3 and 0.6 eV from the band edge. These traps limit the charge‐carrier lifetimes of BiOI, and future improvements in the performance of BiOI photovoltaics will need to focus on identifying their origin. Nevertheless, these deep traps are three to four orders of magnitude less concentrated than the surface point defects induced through vacuum annealing. The charge‐carrier lifetimes of the BiOI films are also orders of magnitude longer than if these surface defects were recombination active. This work therefore shows BiOI to be robust against processing conditions that lead to percent‐level iodine‐, bismuth‐, and oxygen‐related surface defects. This will simplify and reduce the cost of fabricating BiOI‐based electronic devices, and stands in contrast to the defect‐sensitivity of traditional covalent semiconductors.     

激光泵浦受电容残压影响及容限分析

分析了激光泵浦系统中储能电容残压的产生原因,并通过长期试验研究,给出了电容残压的产生和增长规律。综合考虑电容残压增长规律和激光装备实际应用情况,明确提出了激光装备的实际残压容限值和维修决策原则;并依据电容残压增长规律和激光器泵浦氙灯工作特性,指出调高储能电容工作电压是一种不仅无益而且有损于激光装备工作寿命的维修方法。