Effects of Winding Attachment Positions on Output Characteristics of Flux‐Modulating Synchronous Machines

The flux‐modulating synchronous machine (FMSM) is a new type of multipole SM with nonoverlapping concentrated armature and field windings on the stator. This paper compares the output characteristics of two FMSMs through finite element analysis (FEA) and experiments. In both of the FMSMs, the attachment positions of the armature and field windings are swapped. To determine the reason for the discrepancies in their output characteristics, unsaturated inductances were calculated using a d‐‐q equivalent circuit. In addition, the calculated results of the inductances were confirmed through a visualization of the leakage fluxes using FEA. The results of the study show that the synchronous inductance can be reduced by attaching the armature winding to the air‐gap side of the stator teeth and that the reduction leads to an increase in output power.     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

{X,Y}-Cyclacene Graphs with Next Nearest Neighbor Interactions

Eigensolutions of {X( = C,B,N),Y( = C,B,N)}-cyclacene graphs with next nearest neighbor (nnn) interactions have been obtained in analytical forms by adapting n-fold rotational symmetry followed by two-fold rotational symmetry (or a plane of symmetry). Expressions of eigensolution indicate the subspectral relationship among such cyclacenes with an even number of hexagonal rings e.g., eigenvalues of {X,Y}-di-cyclacene are found in the eigenspectra of all such even cyclacenes. Total π-electron energies and highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO–LUMO) gaps are calculated using the analytical expressions obtained and are found to vary negligibly with the variation of nnn interactions in such cyclacenes. Total π-electron energy is found to increase due to increase in restriction intensity of nnn interactions, whereas the HOMO–LUMO gap of polyacenecs having the even number of hexagonal rings and with one electron at each site (atom) decreases with increase in the restriction intensity since such systems contain degenerate half-filled HOMO (bonding or nonbonding) that are much more vulnerable for perturbations imposed through nnn interactions.     

Ultrasonic tomographic velocimeter for visualization of axial flow fields in pipes

An ultrasonic tomographic velocimeter to provide quantitative images of axial flow fields in pipes is developed and presented in this work. To detect the flow in various directions and positions, a novel transducer configuration strategy is proposed. All-in-one transducers are mounted in two sectional planes of the pipe. In each plane, N transducers are equally spaced along the circumference. Overlapped propagation paths are introduced by the configuration strategy, and the influence of the vortex flow can be eliminated theoretically by averaging the line velocities of the overlapped paths. To achieve a fast detection speed, the projection data is collected via an electrical scan in a fan-beam mode. After rearrangement and interpolation of the projection data, the parallel beam filtered back projection (FBP) algorithm is implemented to reconstruct the axial flow field. Numerical simulations with the theoretical velocity profiles were performed. The compensation method for the vortex flow is proved to be effective and necessary, and the number of transducers required for reconstruction of common flow profiles was estimated. Accordingly, an ultrasonic tomographic velocimeter consisting of 2×12 transducers was fabricated. Experiments were conducted in the straight pipe and downstream of a single bend pipe and compared with the computational fluid dynamics (CFD) simulation results. As demonstrated, the ultrasonic tomographic velocimeter was capable of visualizing both symmetric and asymmetric axial flow fields with high reliability.     

碳脱氧在钢包顶渣改质中的应用

 为了进一步降低夹杂物缺陷并提高产品质量,基于碳脱氧进行了钢包顶渣改质的研究。冷轧产品的生产工艺为铁水预处理→转炉→RH精炼→连铸,为减少钢中夹杂物质量分数,需要进行钢包顶渣改质,同时降低钢包顶渣TFe质量分数。采用粒碳部分替代铝渣球的方法进行基于碳脱氧工艺的钢包顶渣改质,试验结果表明,顶渣改质效果良好,在顶渣TFe质量分数、中间包钢水游离氧明显降低的同时铸坯中Al₂O₃夹杂物得到优化;“30 kg粒渣+铝渣球”工艺降低生产成本5.16元/t(钢)。     

亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

基于Stateflow电力机车变流器控制设计与实现

某出口型号交流电力机车牵引控制系统要求变流器控制逻辑具备接触器控制、牵引系统数据交互、变流器故障保护、变流器启动自检等功能。针对以上功能,基于MATLAB中的Simulink/Stateflow可视化编程工具进行牵引控制模型的搭建,遵循模块化编程理念,采用较少的程序代码编写实现复杂的逻辑控制模型,生成逻辑清晰的控制功能流程图,进行半实物仿真测试,增强控制模型的可靠性。通过该变流器产品型式试验检验,验证变流器控制逻辑的功能可以满足控制系统的需求。     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

田赛距离测量中全站仪的设计与实现

本文提出了将智能全站仪这种精密测量仪器广泛应用于田赛项目测量中，并结合其他科技元素用于解决田赛项目中跳远、投掷等项目的测量及数据管理问题，实现实时、自动、准确地裁定和报告比赛成绩。