旋转导向钻井偏心稳定器横向振动研究

旋转导向钻井偏心稳定器横向振动研究是国家863“可控(闭环)三维轨迹钻井技术”课题研究的部分内容。选取偏心稳定器的心轴作为研究对象,以偏心稳定器心轴连续梁系统的横向振动模型受力分析为基础,根据课题研究中所设计的心轴结构形式,建立了与实际情况较为接近的三铰支点的连续梁系统横向振动方程;并分析了偏心稳定器横向振动对钻井工具和钻具系统的影响,为合理进行心轴设计以及偏心稳定器样机在现场的正确使用和钻井参数的合理选择,提供了科学的理论依据和实用的计算方法。计算实例表明,当钻压范围选择在80~250kN时,215.9mm井眼钻进中的确存在19~20、61~63、162~163r/min前三阶横向共振转速区间,因此在选择钻井参数时应通过钻压与转速的配合,尽可能避开横向共振转速,以保证下部钻具组合系统及作业安全。     

0.25μm CMOS千兆以太网发送器设计

分析了千兆以太网体系结构,给出了符合IEEE 802.3z标准中1000BASE-X规范的发送器电路结构,并采用TSMC 0.25 μm CMOS 混合信号工艺设计了符合该规范的高速复接电路和锁相环时钟倍频电路.芯片核心电路面积分别为(0.3×0.26)mm2和(0.22×0.12)mm2.工作电压2.5 V时,芯片核心电路功耗分别为120 mW和100 mW.时钟倍频电路的10倍频输出时钟信号频率为1.25 GHz,其偏离中心频率1MHz处的单边带相位噪声仅为-109.7 dBc/Hz.在驱动50 Ω输出负载的条件下,1.25 Gbit/s的高速输出数据信号摆幅可达到410 mV.     

基于频率采样技术的FIR数字滤波器优化设计

本文提出了一种FIR数字滤波器满意优化设计方法，将滤波器过渡带样本值作为优化变量，通过设计通带、过渡带和阻带性能指标满意度函数和综合满意度函数，构造出满意优化模型，并用本文提出的新量子遗传算法搜索满意解，FIR高通和带阻数字滤波器的设计结果表明，采用满意优化方法设计的FIR滤波器的性能优于传统方法。     

基于随机相位误差Tikhonov分布的MC-DS-CDMA系统性能分析

本文针对工作于慢变频率选择性Rayleigh衰落信道中的部分相干的MC-DS-CDMA系统，基于随机相位误差的Tikhonov密度分布提出了误码率上边界的一种分析方法。仿真结果表明，随着环路信噪比的增加，相位误差损耗所产生的系统误码率性能损失变得越来越小，当环路信噪比高于系统信噪比(Eb/N0)20dB时，系统误码率性能损失小于0．2dB。在MC-DS-CDMA系统中，由于能用频率分集取代路径分集，因而接收机结构更易实现。     

Optimization of support positions to maximize the fundamental frequency of structures

In this paper, the position optimization of simple supports is implemented to maximize the fundamental frequency of a beam or plate structure. Both elastic and rigid supports are taken into account. First, the frequency sensitivity with respect to the movement of a simple support is derived using the discrete method. By means of the shape functions of the finite element method, closed‐form sensitivity formulations are developed straightforwardly. Then, a heuristic approach, called evolutionary shift method, is presented for optimizing support positions with a fixed grid mesh scheme. Based on the design sensitivity analysis, the support with the highest efficiency is shifted in priority along the elementary edges with the interval (step) of the elementary size. To facilitate the convergence of the process, the interpolation technique is employed to evaluate the solution more accurately. Finally, three numerical examples are presented to demonstrate the validity of the sensitivity analysis and the effectiveness of the optimization method. Copyright © 2004 John Wiley & Sons, Ltd.     

幅频特性的数学分析

根据数控装置检测系统中传感器信号电路工作要求,以共射电压放大电路为例,分别考虑耦合电容、旁路电容、结间电容和分布电容对不同信号频率的作用,分析了电路的低频特性和高频特性,给出了上下限截止频率的解析式.由此得出,电路其他参数一定时,在低频段,下限截止频率与耦合电容、旁路电容成反比,在高频段,上限截止频率与等效输入输出电容成反比,从而为传感器系统设计提供理论依据.     

Schwingfestigkeit von Schraube‐Mutter‐Verbindungen

High cycle fatigue of bolted connections Extensive tests regarding the influences on the fatigue of bolt‐nut‐connections of preloading with torsion, of preloading with yielding, of loading with superimposed bending and of the tested lot are processed. These influences are not yet known according to VDI 2230. New testing devices were designed for these tests, which allow a far less expensive operation and may easily be used for bolts of diameters up to M100 and testing frequencies up to 1000 Hz. The validity of fatigue resistance according to VDI 2230 is specified with respect to the test results. The determined influence of the tested lots is unexpectedly high. The manufacturing process of bolts should be improved to minimize this influence.     

ISIS全局优化多道反演技术在墩2块岩性油藏描述中的应用

为进一步落实墩2块戴一段岩性油藏成藏规模及分布规律，针对该储层薄、横向变化快的特点，利用ISIS全局优化多道反演技术，对该构造区岩性储层进行了精细描述，较好的预测出戴一段储层平面分布规律。     

GM300电台的调试原理及方法

GM300电台是一种性能优良的电台，目前在我国的地震勘探领域广泛应用。与其它类型的电台相比，GM300电台的调试方法完全不同。掌握其调试原理及方法是对该类电台进行正确维护的基础。本文从分析GM300电台调试原理入手，总结了该电台的调试方法。     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.