全文获取类型
收费全文 | 48246篇 |
免费 | 4797篇 |
国内免费 | 1937篇 |
专业分类
电工技术 | 16661篇 |
技术理论 | 1篇 |
综合类 | 3952篇 |
化学工业 | 1327篇 |
金属工艺 | 562篇 |
机械仪表 | 1041篇 |
建筑科学 | 18401篇 |
矿业工程 | 839篇 |
能源动力 | 1441篇 |
轻工业 | 277篇 |
水利工程 | 527篇 |
石油天然气 | 248篇 |
武器工业 | 101篇 |
无线电 | 4522篇 |
一般工业技术 | 1862篇 |
冶金工业 | 714篇 |
原子能技术 | 304篇 |
自动化技术 | 2200篇 |
出版年
2024年 | 134篇 |
2023年 | 428篇 |
2022年 | 933篇 |
2021年 | 1088篇 |
2020年 | 1237篇 |
2019年 | 965篇 |
2018年 | 905篇 |
2017年 | 1427篇 |
2016年 | 1539篇 |
2015年 | 1934篇 |
2014年 | 4794篇 |
2013年 | 2957篇 |
2012年 | 3956篇 |
2011年 | 4101篇 |
2010年 | 3240篇 |
2009年 | 3454篇 |
2008年 | 3191篇 |
2007年 | 3646篇 |
2006年 | 2906篇 |
2005年 | 2363篇 |
2004年 | 1838篇 |
2003年 | 1576篇 |
2002年 | 1258篇 |
2001年 | 1199篇 |
2000年 | 908篇 |
1999年 | 740篇 |
1998年 | 486篇 |
1997年 | 374篇 |
1996年 | 330篇 |
1995年 | 233篇 |
1994年 | 186篇 |
1993年 | 185篇 |
1992年 | 120篇 |
1991年 | 83篇 |
1990年 | 62篇 |
1989年 | 36篇 |
1988年 | 33篇 |
1987年 | 31篇 |
1986年 | 15篇 |
1985年 | 20篇 |
1984年 | 17篇 |
1983年 | 15篇 |
1982年 | 6篇 |
1981年 | 4篇 |
1980年 | 20篇 |
1979年 | 3篇 |
1978年 | 1篇 |
1975年 | 2篇 |
1954年 | 1篇 |
排序方式: 共有10000条查询结果,搜索用时 234 毫秒
11.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2 mΩ cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively. 相似文献
12.
Mostafa Dellahi Hattab Maker Guillermo Botella Enrique Alameda-Hernandez Azeddine Mouhsen 《International Journal of Circuit Theory and Applications》2020,48(6):887-905
The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD). 相似文献
13.
Harmonic elimination pulse width modulation (HEPWM) method has been widely applied to multilevel voltage source inverter (MVSI) to remove low frequency harmonics from its output voltage. However, the computation of the HEPWM switching angles for MVSI is very challenging due to several constraints, namely angle sequencing, very tight angular spacing and the numerous possibilities of angles distribution ratio. Realizing the potential of Differential Evolution (DE) to handle complex problems, this work proposes its application to solve the HEPWM problem for cascaded MVSI. Its emphasis is on improving the availability of HEPWM for higher output voltage by extending the maximum range of modulation index (M). It also removes the discontinuities in the switching angles and reduces the number of distribution ratio required to obtain the required solution. Compared to the most advanced (similar) work, i.e., 7-level MVSI with seventeen switching angles, DE covers a wider range of M; the maximum achievable M is 2.80. Furthermore, it exhibits very low second order distortion factor (DF2): for the worst case, the value of DF2 is 0.0014%. To verify the viability of the proposed algorithm, simulation is carried out and hardware prototype is constructed. Both results show very good agreement with the theoretical prediction. 相似文献
14.
Hajime Tomita 《Electrical Engineering in Japan》2015,190(3):1-8
In this investigation, the nature of the electrostatic discharge (ESD) that occurs when a charged object moves toward a stationary grounded object is experimentally clarified. The spark lengths, discharge currents, and induced voltages in a magnetic probe were measured when a charged metallic spherical electrode connected to a 422 pF capacitor approached a stationary grounded object, which was the current target, for different moving speeds of the charged metallic spherical electrode in a range of 1 mm/s to 100 mm/s. The charge voltages of the capacitor were +6.5 kV and +10 kV. Based on the results, the average gap length shortened with the speed of the spherical electrode. The average peak values of the discharge current and the induced voltage were likely to increase with the speed of the spherical electrode. The average rise times of the discharge current and the induced voltage were likely to drop with the speed of the spherical electrode. The relation between the spark length and the discharge current due to the ESD can be explained qualitatively by using an equation derived from the spark resistance formula proposed by Rompe and Weizel. 相似文献
15.
《Microelectronics Journal》2015,46(11):1012-1019
This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm2 and 0.08 mm2, respectively. 相似文献
16.
ABSTRACTThe RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances. 相似文献
17.
WANG Jiqing 《声学技术》2003,22(Z1)
The traditional performing arts and theatrical buildings in China can be traced back to a long history and were well developed during Song and Yuan Dynasties, 11th-14th centuries. Pavilion stage, opened on three sides and thrusting into the audience area, was unique and the most popular form in the open-air theatres, the courtyard theatres, and the indoor theatres up to the present day. As the traditional Chinese opera is performed in an abstract way, no stage settings are required and used. Therefore, the pavilion stage including the flat or domed ceiling and the back wall is virtually functioned as a reflective shell, which increases the early reflections and also intensifies the sound in the audience area. Meanwhile, it provides sufficient self-support to the performers. Acoustical parameters including reverberation time RT, early decay time EDT, acoustic ratio C50, strength index (loudness) G, and stage support factor ST1 were measured and reported on several traditional theatrical buildings. 相似文献
18.
19.
中、高压变频器产量越来越多,但试验手段大多比较落后,一般采用带电机空转的方法。本文介绍了一个高压变频器试验平台,通过该平台可以对电压等级在3kV~10kV、功率在5000kW以下的变频器进行实载试验。 相似文献
20.
通过分析数字集成芯片多输出中电源电压瞬间下降的原因,对常规驱动电路结构进行改进。改进后单输出电路的峰值电流降为原来的2/3,再通过优化版图的电源布线,能有效防止电源电压下降,使芯片正常稳定地工作。 相似文献