Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium

Oxygen incorporation in Al_yIn_1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH₃ flow, growth temperature, and alloy composition. Both O₂ and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O₂ or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.     

Effect of Bragg reflector on the threshold current density in AlGaInP visible laser

The GalnP/AlGalnP layers are known as attractive materials for 600 nm band laser diodes. In this paper, a Bragg reflector between GaAs substrate and n-cladding layer was applied for the reduction in the lasing threshold. In a SCH-MQW structure, a Bragg reflector was composed of alternating λ/4n layers of AlAs and AlGaAs layers, 12.5 pairs. The effect of Bragg reflector on the threshold current and spontaneous emission intensity was appreciable because most of spontaneously emitted photons were reflected from a Bragg reflector and carriers were regenerated in the GalnP active layer.     

高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析

建立了Ａｌ０．３Ｇａ０．２２Ｉｎ０．４８Ｐ／ＧａＡｓ异质结双极型晶极管（ＨＢＴ）中电流输运过程的模型,利用实验得到的材料特性参数进行了ＨＢＴ电流增益随温度变化的模拟．随着温度上升,小电流时电流增益下降较多,而大电流时电流增益基本保持不变．模拟表明,小电流下电流增益的下降主要是由ｅｂ结空间电荷区的复合电流随温度增加而造成的;而大电流下电流增益直至７２３Ｋ下降仍小于１０％．最高工作温度可达８４８Ｋ．由于采用的计算方法充分考虑了空间电荷区复合电流的影响,模拟结果较为符合实际情况,可为研制高性能ＨＢＴ器件所需材料     

脊形波导激光器中GaInP／AlGaInP选择蚀刻性的研究

本文制作了670nmGaInP/AlGaInP应变层量子阱脊形波导激光器,为了进一步优化工艺,在普通的单量子阱材料横向结构中嵌入30－50nm的GaIlP蚀刻阻挡层,用此种材料加工而成的控长1200μm,宽64μm的氧化条激光器的阈值电流密度为340A／cm^2,采用配比为1．0：2．5的HCl:H2O深液对GaInP/AlGaIn进行湿蚀刻研究,得到了较好的选择恂刻性结果。     

隧道结AlGaInP发光二极管

报道了通过隧道结将衬底的导电类型从n型转变到p型,从而可以利用n型GaP作为以n型GaAs为衬底的AlGaInP发光二极管的电流扩展层.n型电流扩展层的电阻率低于p型电流扩展层的电阻率,这种结构改善了电流扩展层的作用,从而提高了发光二极管的光提取效率.对3μm GaP电流扩展层的发光二极管,实验结果表明,隧道结发光二极管的发光功率与具有相同基本结构的传统发光二极管相比,20mA时发光功率提高了50%,100mA时提高了66.7%.     

离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器

用纯Ar离子束刻蚀方法制备出大功率高效率6 5 0 nm实折射率Al Ga In P压应变量子阱激光器.对偏角衬底,干法刻蚀可得到湿法腐蚀不能得到的高垂直度和对称台面.制备的激光器条宽腔长分别为4 μm和6 0 0 μm,前后端面镀膜条件为10 % / 90 % .室温下阈值电流的典型值为4 6 m A,输出功率为4 0 m W时仍可保持基横模.10 m W,4 0 m W时的斜率效率分别为1.4 W/ A和1.1W/ A.     

Donor-acceptor interactions in Al0.5In0.5P

Dopant interactions are considered between Mg-acceptor atoms and various donor species, including the deep donor; oxygen; and the shallow donors, Te, S, and Si, in Al_0.5In_0.5P. While each of these donor species is shown to suppress Mg diffusion and enhance Mg incorporation in Al_0.5In_0.5P, careful analysis of the concentration profiles for these various donor species reveals subtle differences in the shape of the donor and acceptor dopant profiles, suggesting subtle differences in both the type of donor-acceptor interactions involved and in the effectiveness of the various donor species at suppressing Mg diffusion. Oxygen, in particular, is shown to have a profound effect on Mg diffusion in Al_0.5In_0.5P uniform-composition layers, while other donor species are less effective at suppressing Mg diffusion. Such differences suggest that a chemical bonding effect or complex formation may be more dominant between Mg and oxygen, while electrical compensation likely plays a larger relative role between Mg and the shallow-donor species.     

新型表面再构的倒装AlGaInP LED

研究一种表面再构的具有全方位反光镜(ODR)结构的倒装AlGaInP半导体发光二极管(LED)。通过湿法腐蚀方法再构N-AlGaInP盖层表面,形成类金字塔的表面结构,使不同角度入射的光有更多的机会出射。比较了表面再构LED与常规LED的电、光学特性,在注入电流为20 mA时,经过表面再构LED的轴向光强和输出光功率是常规LED的1.5倍,表面再构后大大提高了LED的外量子效率,减少了LED内部热量的积累,提高了LED芯片的可靠性。