Defects in CVDZnS

Defects seriously influence the optical properties and mechanical properties of CVDZnS.The deposition technique was introduced and experiment methods such as SEM,TEM and OM were adopted to study the defects:hexagonal phase,abnormally large grains,micro-cracks,micro-pores and impurities.The microstructures of these defects were observed,and the formation mechanisms of these defects were analyzed.Hexagonal ZnS as an impurity causes anisotropy in different directions with different refraction indexes and increases the scattering of CVDZnS.Increasing the deposition temperature can inhibit the formation of the hexagonal phase.The main reason for the growth of abnormally large grains in CVDZnS is high deposition rate.The lower deposition temperature increases growth stress in CVDZnS,which consequently results in the bowing of CVDZnS plates,and introduces microscopic defects such as grain blending and micro-cracks in the crystal.Micro-pores and impurities are induced by high reactant concentration in the local deposition chamber,which can be avoided by improving the gas flowing so as to make the concentration more uniform.     

Formation and characterization of diamond crystals synthesized by microwave plasma CVD system

Abstract

Diamond crystals have been successfully synthesized on (100) Si wafer using microwave plasma CVD. The growth was conditioned in a flowing system in which the parameters, such as CH₄/H₂ ratio, pressure, temperature and microwave power were varied. Cubo‐octahedra or tetrakaidecahedra are the equilibrium shape of diamond single crystals obtained under all conditions and are therefore the basic unit for the formation of polycrystalline diamond films, mostly through repetitive twinning and secondary growth of diamond crystals on {100} habit planes of cubo‐octahedra. Both X‐ray diffraction and Raman spectroscopy were used to facilitate the analysis of the diamond crystallinity and purity. These qualities are similar to those of natural diamonds.     

Application of N- and B-doped CVD diamond layers for cyclic voltammetry measurements

Conductive polycrystalline diamond layers prepared by the CVD process have received attention from electrochemists owing to such superior electrochemical properties as the wide potential window, the very low background current, the stability of chemical and physical properties.In this paper, the cyclic voltammetry application using N- and B-doped diamond electrodes was studied. Diamond layers, doped with boron and nitrogen, were synthesized on a silicon substrate in a hot-filament CVD reactor. The obtained diamond layers were characterized using Raman spectroscopy and scanning electron microscopy (SEM).The electrochemical properties of diamond layers were measured in KCl and NaCl basic solutions to gain knowledge about their potential application as an electrode material.It was found that boron doped diamond electrodes showed potential windows up to about 7 V which were almost twice wider than those observed for conventional Pt electrodes.     

直流PCVD法钛化合物的研究

用直流等离子体化学气相沉积法沉积TiC、TiN、Ti(CN)以及钛的复合涂层。对在高速钢和硅基体上所得的各种钛化合物膜做了晶体结构分析、表面形貌分析、断口结构分析和显微硬度分析等。试验表明:在沉积温度600℃左右,所得的多种Ti(CN)涂层有很高的显微硬度和良好的粘接力。这些涂层有的是由TiC和TiN两种晶体组成,有的是由TiC、TiN和Ti(CN)三种晶体组成。部分Ti(CN)的结构非常细密,是由多种晶体组成的混合物。     

Nano‐emissive display technology for large‐area HDTV

Abstract— Using nano‐emissive display (NED) technology, Motorola labs has successfully developed 5‐in. full‐color display prototypes. Carbon‐nanotube‐based field‐emission displays with a pixel size of 0.726 mm for a 42‐in. HDTV exhibit video image quality comparable to CRT displays and demonstrate a luminance of 350 cd/m². These novel low‐drive‐voltage NEDs take advantage of selective growth of CNTs to obtain the desired electron‐emission performance while maintaining inexpensive manufacturing due to a simple self‐focusing and self‐regulating planar structure. Improved video image quality and color purity are achieved with very low power consumption and without the need for an expensive focusing grid.     

Uniform carbon‐nanotube emitter for field‐emission displays

Abstract— The synthesis of carbon‐nanotube (CNT) field emitters for FEDs by thermal chemical vapor deposition (CVD) and their structural and emission characterization are described. Multi‐walled nanotubes (MWNTs) were grown on patterned metal‐base electrodes by thermal CVD, and the grown CNTs formed a network structured layer covering the surfaces of the metal electrode uniformly, which realized uniform distribution of electron emission. A technique for growing narrow MWNTs was also developed in order to reduce the driving voltage. The diameter of MWNT depends on the growth temperature, and it has changed from 40 nm at the low temperature (675°C) to 10–15 nm at the high temperature (900–1000°C). Moreover, narrower MWNTs were grown by using the metal‐base electrode covered with a thin alumina layer and a metal catalyst layer. Double‐walled nanotubes (DWNTs) were also observed among narrow MWNTs. The emission from the narrow CNTs showed a low turn‐on electric field of 1.5 V/μm at the as‐grown layer.     

工艺条件对热丝 CVD金刚石薄膜电学性能的影响

采用不同的沉积条件,通过HFCVD方法制备了四种不同质量、不同取向的CVD金刚石薄膜．讨论了薄膜退火前后的介电性能．研究了不同沉积条件和退火工艺与介电性能之间的联系．通过扫描电镜SEM、Raman光谱、XRD、I-V特性曲线以及阻抗分析仪表征CVD金刚石薄膜的特性．结果表明,退火工艺减少了薄膜吸附的氢杂质,改善了薄膜质量．获得的高质量CVD金刚石薄膜具有好的电学性能,在50V偏压条件下电阻率为1．2×1011Ω·cm,频率在2MHz条件下介电常数为5．73,介电损耗为0．02．     

复合抛光对 CVD金刚石薄膜表面光洁度的改进研究

采用激光抛光和热化学抛光相结合的方法，对通过热丝CVD方法生长的金刚石薄膜进行了复合抛光处理．并利用X射线衍射仪（XRD）、拉曼光谱仪（Raman）、扫描电子显微镜（SEM）和原子力显微镜（AFM）对金刚石薄膜进行了表征．结果表明，所合成的金刚石薄膜是高质量的多晶（111）取向膜；经复合抛光后，金刚石薄膜的结构没有因抛光而发生改变，金刚石薄膜的表面粗糙度明显降低，光洁度大幅度提高，表面粗糙度Ra在100nm左右，基本可以达到应用的要求．     

UHV/CVD生长本征硅外延层的研究

在微波双极型晶体管中,收集区的厚度是影响其截止频率的一个重要因素。普通的常压外延难以生长出杂质浓度变化陡峭的薄外延层。文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究;并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。采用该外延材料制作的锗硅异质结双极型晶体管(SiGe HBT)器件击穿特性良好。     

Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I simulation of CVD diamond film growth under Joe—Badgwell—Hauge model

The growth of {100} oriented CVD( Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe‘s model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe‘s model are influenced intensively by temperature(Ts) and not evident bymass fraction Wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic‘s prediction;(4) the simulation results cannot make sure the role of single carbon insertion.