CVD金刚石膜{100}取向在改进化学反应模型下生长的原子尺度模拟

建立了CVD金刚石膜{100}取向生长过程中的化学反应模型，表面吸附生长机制以沟槽处碳氢组元加入的机制为主，并用改进的KMC方法在原子尺度上模拟了该模型下（100）表面的生长过程，给出了衬底温度和甲基浓度等操作参数对膜质量的影响，结果表明，该化学反应模型能够较实际地揭示{100}取向CVD金刚石膜的生长。     

Spinose carbon nanotubes grown on graphitized DLC film by low frequency r.f. plasma-enhanced chemical vapor deposition

Spinose carbon nanotubes (SCNTs) are grown on silicon substrates covered with diamond-like carbon film and iron catalyst film (Fe/DLC/Si structure) by low frequency r.f. plasma-enhanced chemical vapor deposition (LFRF-PECVD). During the pre-treatment of the Fe/DLC/Si substrate, there are three processes happened, namely, iron film spalled to small islands, the DLC film graphitized, and the iron island reacted partially with the graphitized DLC (GDLC), which can be deduced from the Raman spectroscopy and SEM pictures. SCNTs film grew from C₂H₂---H₂ mixture under low plasma density. The good contact of carbon nanotube with GDLC film was acquired by the accumulation of the graphite sheets and the reaction between the iron particles and GDLC film. The homogeneous spines with the length of approximately 15 nm and the thickness of <5 nm burgeoned from the defects at the wall of carbon nanotube and distributed uniformly, which were in fact thin bent or rolled-up graphite sheets.     

Pulse height defect in pCVD and scCVD diamond based detectors

Polycrystalline (pCVD) and single crystal (scCVD) diamond films grown from Chemical Vapour Deposition (CVD), if sufficiently pure at Raman analysis, are very good materials for beam or flux monitors inside accelerators or nuclear reactors. This is because they are very hard to damage in high radiation fields and very resistant to high temperatures. Films of pCVD diamond are, however, not so good as spectroscopy detectors due to inhomogeneities induced by their growth in grains with the consequent presence of grain boundaries which worsen their energy resolution. The latter can be significantly improved by growing scCVD diamond films onto HPHT synthetic diamond substrates. We have shown that it is possible to measure the density of defects inside diamond specimens using as probes suitable penetrating nuclear radiations. With the preliminary results reported here we'll show that, bombarding CVD diamond films grown at Roma “Tor Vergata” with energetic protons and ⁴He, ⁶Li and ¹²C ions produced in the accelerators of Catania laboratories, the pulse height defects are higher than those in silicon detectors and likewise well described by a power law in the deposited energy. Furthermore, we'll show that pulse heights for the same particles seem to depend on the duration of the measurement, thus exhibiting a sort of depolarization of the insulator when exposed to the electric voltage which makes it a particle detector.     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

Characterization and tests of planar Co3O4 model catalysts prepared by chemical vapor deposition

The chemical vapor deposition method was used to deposit thin films of cobalt oxide starting with cobalt (II) acetylacetonate and oxygen. The deposition process was investigated and the obtained films were identified as a cubic spinel-type polycrystalline Co₃O₄ with a crystallite size of 30–40 nm. The coating was carbon-free and the surface oxygen concentration was measured to be 66 at.% with AES analysis. Smooth and highly uniform thin films were deposited on planar stainless steel substrates and subjected to TPR and catalysis tests that show positive correlation. The apparent activation energy of Co₃O₄ reduction to CoO was measured to be (33±5) kJ/mol. The catalytic activity of Co₃O₄ was investigated toward the conversion of both propane and ethanol to carbon dioxide. Though the catalytic action was registered at the same temperature, the deactivation process was seen to be different. The catalytic conversion of ethanol induces a fast deactivation process, which was linked to its high ability to reduce Co₃O₄.     

FINE CONTROL OF HZSM-5’S PORE-OPENING SIZE BY A NEW CVD METHOD

A new CVD method without vacuum condition(CVDWV)was designed in this study,ithad been found that by modifying the flow rate of the carrier gas(N_2)and the temperature of sur-face reaction,silicon saturator and sample tube,the amount of silica deposited on the external sur-face of the zeolite could be precisely controlled,The changes in the physicochemical properties ofzeolite,such as pore-opening size,acidity and reaction property were investigated.The results ob-tained showed that:modification of the improved CVD method did not change the internal structureand acidity of the zeolite,but could bring about significant change of pore-opening size and reactionproperty as desired.     

Ru-doped nanostructured carbon films

Pure and Ru-doped carbon films are deposited on Si (100) substrates by electron cyclotron resonance chemical vapor deposition. The films are characterized by transmission electron microscopy, electron energy loss spectroscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. In both the pure and Ru-doped samples, diamond nanocrystallites are formed in amorphous carbon matrices. The Ru-doped film contains much smaller diamond nanocrystallites (approx. 3 nm) than the pure samples (approx. 11 nm). Lower surface roughnesses are observed in both pure and Ru-doped samples as compared to other reported nanocrystalline diamond films. The conductivity of the Ru-doped film is significantly higher than that of the pure film. The results show that Ru-doped nanocrystalline diamond films have unique structures and properties as compared to pure nanocrystalline diamond films or metal doped diamond-like carbon films, which may offer advantages for electrochemical, optical-window, field emission or tribological applications.     

化学气相沉积(CVD)法制备先进陶瓷材料

先进陶瓷材料具有许多优异的性能,如高比强度、高比模量、密度低、硬度高、耐腐蚀、抗氧化等,从而被广泛用作高温结构部件。化学气相沉积()法工艺能制备诸如碳化物、氮化物、硼化物、氧化物等CVD多种陶瓷,因而具有广阔的应用前景。     

Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C₁₀H₁₆O) dissolved with ethyl alcohol (C₂H₅OH), methane (CH₄), ethylene (C₂H₄) and acetylene (C₂H₂). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10^{− 4} Ω^{− 1} cm^{− 1}) and under the light illumination (i.e. 9.9 × 10^{− 4} Ω^{− 1} cm^{− 1}). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10^{− 3} mA/cm². The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10^{− 4}% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future.