Synthesis of nitrogen incorporated diamond-like carbon thin films using microwave surface-wave plasma CVD

Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (V_oc) of 168.8 mV and a short-circuit current density (J_sc) of 8.4 μA/cm² under light illumination (AM 1.5 100 mW/cm²). The energy conversion efficiency and fill factor were found to be 3.4 × 10^{− 4}% and 0.238 respectively.     

Evaluation of nucleation activation energy in metal CVD processes

A new approach to evaluate activation energy for nucleation in metal chemical vapor deposition (CVD) is presented. Deposition is performed by laser induced chemical vapor deposition (LCVD) using a low laser power and a high scan speed, so that only discrete particles in the initial nucleation stage are formed. The nucleation activation energy is then obtained from a relationship between the laser-induced surface temperature distribution and the particle distribution. The activation energy is directly related to the nucleation barrier, and hence the difference in the nucleation activation energies on different substrates may be used to explain the chemical selectivity which is often observed during metal CVD processes. This approach is experimentally applied to aluminum CVD using dimethylethylamine alane (DMEAA) precursor, and its nucleation activation energy is found to be 25kcal/mol on silicon surface.     

EPR study of hydrogen-related defects in boron-doped p-type CVD homoepitaxial diamond films

Boron-doped p-type single crystalline chemical vapor deposition (CVD) homoepitaxial diamond films were investigated by electron paramagnetic resonance (EPR). Carbon dangling bond defects, which were accompanied by a nearby hydrogen atom, were observed in boron-doped p-type CVD diamond films on a IIa substrate similar to those observed in undoped diamond. This result suggested that the energy level position of the defects is located below the Fermi energy of boron-doped diamond, at around 0.3 eV above the valence-band top. The reason why the Fermi energy could be changed by the incorporation of boron atoms at low density (10¹⁶–10¹⁷/cm³) in the film in spite of the existence of the large defect density of EPR centers (10¹⁸/cm³) is thought to be that the singly occupied electron states of defects are located near the band edge. As for the thermal annealing effect of the defects, it was revealed that the concentration of the defects and the mobility of the p-type film did not change after annealing up to 1200 °C which is much higher than the temperature of boron–hydrogen pair dissociation.     

Mechanical properties of DLC films prepared inside of micro-holes by pulse plasma CVD

Diamond-like carbon (DLC) films are metastable amorphous carbon materials with superior tribological characteristics. In order to improve wear resistance of micro-extrusion dies with numerous imperceptible holes, DLC films were deposited on the inner wall surface of model dies with holes of 2 and 0.9 mm in diameter, and 20 mm in depth by using pulse plasma CVD method. This paper will discuss how argon gas, deposition pressure and time affect the characteristics of films deposited on the inner wall surface of dies. This micro-coating method can be applied widely for inner wall surface treatment of components with thin holes.     

Thermal gas effusion from diamond-like carbon films

Good-quality diamond-like carbon films (6 at.% H₂, 2400 kgf/mm² microhardness, 2.7 eV bandgap, higly insulating) have been obtained by the DC glow discharge decomposition of acetylene. Mass spectroscopic thermal effusion measurements were carried out on the films deposited under different deposition conditions. Analyses of hydrogen in conjunction with hydrocarbon effusing species yield information on the microstructure and nature of C---H bonding configurations. It is shown to be a useful analytical tool to study hydrogenated amorphous carbon films of different microstructures varying from polymer-like to diamond-like.     

Tungsten Oxide Nanorods Array and Nanobundle Prepared by Using Chemical Vapor Deposition Technique

Tungsten oxide (WO₃) nanorods array prepared using chemical vapor deposition techniques was studied. The influence of oxygen gas concentration on the nanoscale tungsten oxide structure was observed; it was responsible for the stoichiometric and morphology variation from nanoscale particle to nanorods array. Experimental results also indicated that the deposition temperature was highly related to the morphology; the chemical structure, however, was stable. The evolution of the crystalline structure and surface morphology was analyzed by scanning electron microscopy, Raman spectra and X-ray diffraction approaches. The stoichiometric variation was indicated by energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy.     

基底材料和温度对CVD金刚石沉积的影响

使用热丝CVD装置在钢渗铬层、三氧化二铝、YG8硬质合盒基底上沉积了金刚石膜、结果表明，在700～900℃温度范围内，热稳定性好的基底材料有利于金刚石晶核的形成。硬质合金和三氧化二铝的热稳定性都比钢港铬层好，在700～900℃能获得10^7cm^-2以上的形核密度，而钢渗铬层超过800℃后．形核密度低于10^6cm^-2。     

A study of diamond synthesis by hot filament chemical vapor deposition on Nc coatings

Deposition of diamond films onto various substrates can result in significant technological advantages in terms of functionality and improved life and performance of components. Diamond is hard, wear resistant, chemically inert, and biocompatible. It is considered to be the ideal material for surfaces of cutting tools and biomedical components. However, it is well known that diamond deposition onto technologically important substrates, such as co-cemented carbides and steels, is problematic due to carbon interaction with the substrate, low nucleation densities, and poor adhesion. Several papers previously published in the relevant literature have reported the application of interlayer materials such as metal nitrides and carbides to provide bonding between diamond and hostile substrates. In this study, the chemical vapor deposition (CVD) of polycrystalline diamond on TiN/SiN _x nc (nc) interlayers deposited at relatively low temperatures has been investigated for the first time. The nc layers were deposited at 70 or 400 °C on Si substrates using a dual ion beam deposition system. The results showed that a preliminary seeding pretreatment with diamond suspension was necessary to achieve large diamond nucleation densities and that diamond nucleation was larger on nc films than on bare sc-Si subjected to the same pretreatment and CVD process parameters. TiN/SiN _x layers synthesized at 70 or 400 °C underwent different nanostructure modifications during diamond CVD. The data also showed that TiN/SiN _x films obtained at 400 °C are preferable in so far as their use as interlayers between hostile substrates and CVD diamond is concerned. This paper was presented at the fourth International Surface Engineering Congress and Exposition held August 1–3, 2005 in St. Paul, MN.     

CVD法合成SiC晶须的实验研究

利用简单的实验设备，特殊的金属丝作触媒，以ＳｉＯ２和Ｃ为原料，利用碳热还原反应生成的ＳｉＯ和ＣＯ，通过ＣＶＤ的方法快速合成α－ＳｉＣ晶须，用光学显微镜研究了晶须的生长速度，通过ＴＥＭ研究α－ＳｉＣ晶须的结构和生长方式。讨论了这种方法中α－ＳｉＣ晶须生长的热力学条件，机理及生长动力学模型。     

真空渗硼预处理在CVD金刚石-硬质合金涂层工具中的应用

采用固体粉末真空渗硼工艺，研究了硬质合金工具表面真空渗硼预处理对金刚石涂层附着力的影响，研究结果表明，硬质合金工具通过固定粉末真空渗硼处理，表面生成具有较高稳定性的以CoWB、CoB为主的渗层，经过长时间的金刚石涂层后，硬质合金工具表面出现Co3B和W2Co21B6相，没有单质Co相出现，克服了金刚石沉积中硬质合金表面钴的不利影响，使标志金刚石涂层附着力的压痕测试的临界载荷达到了1500N，并且有着较好的重现性。